公开(公告)号：US20010006240A1

公开(公告)日：2001-07-05

申请号：US09789999

申请日：2001-02-21

Applicant: Micron Technology Inc.

Inventor： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

IPC: H01L027/108 ,  H01L029/76 ,  H01L029/94 ,  H01L031/119

CPC classification number: H01L21/76843 ,  C23C16/02 ,  C23C16/0236 ,  C23C16/42 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76855

Abstract: A method is provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). In one embodiment, a titanium precursor and a silicon precursor are contacted in the presence of hydrogen, to form titanium silicide. In another embodiment, a titanium precursor contacts silicon to form to form titanium silicide.

Abstract translation: 提供了一种通过化学气相沉积（CVD）在集成电路中形成接触的方法。 在一个实施方案中，在氢的存在下使钛前体和硅前体接触以形成硅化钛。 在另一个实施方案中，钛前体与硅接触以形成硅化钛。

公开(公告)号：US20020098654A1

公开(公告)日：2002-07-25

申请号：US10080465

申请日：2002-02-22

Applicant: Micron Technology, Inc.

Inventor： D. Mark Durcan ,  Trung T. Doan ,  Roger R. Lee ,  Fernando Gonzalez

IPC: H01L021/336 ,  H01L021/8242

CPC classification number: H01L27/10888 ,  H01L27/10811 ,  H01L27/10852 ,  H01L28/91

Abstract: Method for forming at least a portion of a top electrode of a container capacitor and at least a portion of a contact plug in one deposition are described. In one embodiment, the top electrode is formed interior to a bottom electrode of the container capacitor. In another embodiment, the top electrode is formed interior to, and exterior and below a portion of the bottom electrode of the container capacitor. The method of forming a top electrode of a container capacitor and a contact plug with a same deposition is particularly well-suited for high-density memory array formation.

Abstract translation: 描述了在一次沉积中形成容器电容器的顶部电极的至少一部分和接触塞的至少一部分的方法。 在一个实施例中，顶部电极形成在容器电容器的底部电极的内部。 在另一个实施例中，顶部电极形成在容器电容器的底部电极的一部分的外部和外部。 形成容器电容器的顶部电极和具有相同沉积物的接触插塞的方法特别适用于高密度存储器阵列形成。

公开(公告)号：US20020125508A1

公开(公告)日：2002-09-12

申请号：US10138458

申请日：2002-05-03

Applicant: Micron Technology, Inc.

Inventor： D. Mark Durcan ,  Trung T. Doan ,  Roger R. Lee ,  Fernando Gonzalez ,  Er-Xuan Ping

IPC: H01L021/8234

CPC classification number: H01L28/91 ,  H01L27/10811 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10888 ,  H01L28/65 ,  Y10S257/905

Abstract: Disclosed is a container capacitor structure and method of constructing it. An etch mask and etch are used to expose portions of an exterior surface of electrode (nullbottom electrodesnull) of the container capacitor structure. The etch provides a recess between proximal pairs of container capacitor structures, which recess is available for forming additional capacitance. Accordingly, a capacitor dielectric and a top electrode are formed on and adjacent to, respectively, both an interior surface and portions of the exterior surface of the first electrode. Advantageously, surface area common to both the first electrode and second electrodes is increased over using only the interior surface, which provides additional capacitance without a decrease in spacing for clearing portions of the capacitor dielectric and the second electrode away from a contact hole location. Furthermore, such clearing of the capacitor dielectric and the second electrode portions may be done at an upper location of a substrate assembly in contrast to clearing at a bottom location of a contact via.

Abstract translation: 公开了一种容器电容器结构及其构造方法。 蚀刻掩模和蚀刻用于暴露容器电容器结构的电极（“底部电极”）的外部表面的部分。 蚀刻在容器电容器结构的近端对之间提供凹槽，该凹槽可用于形成额外的电容。 因此，电容器电介质和顶电极分别形成在第一电极的外表面的内表面和部分上并相邻。 有利地，仅使用内表面增加了第一电极和第二电极两者共同的表面积，这提供了额外的电容，而不会减小用于清除电容器电介质部分和第二电极远离接触孔位置的间隔。 此外，与在接触通孔的底部位置处的清除相反，电容器电介质和第二电极部分的这种清除可以在衬底组件的上部位置进行。