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36 条记录 (耗时 0.027 秒)

    Highly water absorbent sheet
    6.
    发明授权
    Highly water absorbent sheet 有权
    高吸水性片材

    公开(公告)号：US06790798B1

    公开(公告)日：2004-09-14

    申请号：US09667815

    申请日：2000-09-22

    申请人： Migaku Suzuki ,  Ryoichi Matsumoto

    发明人： Migaku Suzuki ,  Ryoichi Matsumoto

    IPC分类号： B32B518

    CPC分类号： A61F13/5323 ,  A61F13/15658 ,  A61F13/534 ,  A61F13/535 ,  A61F2013/15016 ,  A61F2013/53051 ,  A61F2013/530532 ,  A61F2013/530562 ,  Y10T442/651 ,  Y10T442/652

    摘要： A highly absorbent composite sheet wherein a non-woven substrate having a bulky structure and solid SAP with a part contained inside said bulky structure and the rest exposed on the surface of said non-woven substrate are provided, a thermally fusible component being a hot-melt adhesive, the hot-melt adhesive forming a fibrous network and covering said solid SAP and fine cellulose fibers in contact with the solid SAP whereby a single or double fibrous network is provided with the solid SAP held in position. A method for manufacturing same, and an absorbent article using such highly absorbent composite sheet are also provided.

    摘要翻译： 提供了一种高吸收性复合片材，其中提供了具有庞大结构的无纺布基材和固体SAP，其中包含在所述大体积结构内的部分，其余部分暴露在所述无纺布基材的表面上，热熔组分是热 - 熔融粘合剂，热熔粘合剂形成纤维网，并覆盖与固体SAP接触的所述固体SAP和细纤维素纤维，由此提供固体SAP保持在适当位置的单纤维网或双纤维网。 还提供了其制造方法和使用这种高吸收性复合片材的吸收制品。

    Electric-Field Communication Device
    7.
    发明申请
    Electric-Field Communication Device 失效
    电场通信设备

    公开(公告)号：US20100105323A1

    公开(公告)日：2010-04-29

    申请号：US12531927

    申请日：2008-03-21

    申请人： Ryusuke Kawano ,  Katsuyuki Ochiai ,  Mitsuru Shinagawa ,  Yuichi Kado ,  Takuji Harada ,  Hideyuki Okamoto ,  Ryoichi Matsumoto

    发明人： Ryusuke Kawano ,  Katsuyuki Ochiai ,  Mitsuru Shinagawa ,  Yuichi Kado ,  Takuji Harada ,  Hideyuki Okamoto ,  Ryoichi Matsumoto

    IPC分类号： H04B5/00

    CPC分类号： H04B13/005

    摘要： A signal electrode (11A) and a ground electrode (11B) are disposed respectively on surfaces of a case (10). In this way, the signal electrode (11A) and the ground electrode (11B) do not come into contact with any electric component, such as a transmission circuit (21), disposed inside the case (10), and thus a reduction in an electric field (Ec) induced in an electric-field transmission medium can be prevented. In addition, a certain distance between the signal electrode (11A) and the ground electrode (11B) is kept, and thus a reduction in the electric field (Ec) induced in the electric-field transmission medium can be prevented. Furthermore, the contactability between the signal electrode (11A) and the electric-field transmission medium is improved, and thus the electric field (Ec) induced in the electric-field transmission medium can be increased.

    摘要翻译： 信号电极（11A）和接地电极（11B）分别设置在壳体（10）的表面上。 以这种方式，信号电极（11A）和接地电极（11B）不与布置在壳体（10）内部的诸如传输电路（21）的任何电气部件接触，因此， 可以防止在电场传输介质中感应的电场（Ec）。 此外，保持信号电极（11A）和接地电极（11B）之间的一定距离，从而可以防止在电场传输介质中感应的电场（Ec）的减小。 此外，信号电极（11A）和电场传输介质之间的接触性提高，因此可以增加在电场传输介质中感应的电场（Ec）。

    Liquid container, liquid using apparatus, printing apparatus, and ink jet cartridge
    8.
    发明授权
    Liquid container, liquid using apparatus, printing apparatus, and ink jet cartridge 失效
    液体容器，液体使用装置，打印装置和喷墨盒

    公开(公告)号：US07077514B2

    公开(公告)日：2006-07-18

    申请号：US10805192

    申请日：2004-03-22

    申请人： Ryoji Inoue ,  Ryoichi Matsumoto ,  Tatsuo Nanjo ,  Hideki Ogura

    发明人： Ryoji Inoue ,  Ryoichi Matsumoto ,  Tatsuo Nanjo ,  Hideki Ogura

    IPC分类号： B41J2/175

    CPC分类号： B41J2/17523 ,  B41J2/17513 ,  B41J2/17556 ,  B41J2/17596

    摘要： A liquid container is provided which can prevent a leakage of liquid from an air introduction portion under any environment of use and storage and which can maintain a stable negative pressure characteristic irrespective of a degree of liquid consumption. The liquid container includes a liquid containing portion, a liquid supply portion to supply liquid from the liquid containing portion to a liquid using portion, a valve chamber having a one-way valve which permits a gas introduction into the liquid containing portion and prevents the liquid and gas from getting out of the liquid containing portion, a communication path to communicate the liquid containing portion with the valve chamber, a mechanism having a function of maintaining a volume of the liquid containing space, and a communication path closing member capable of enabling or disabling a communication between the liquid containing portion and the valve chamber through the communication path.

    摘要翻译： 提供了一种液体容器，其可以在任何使用和储存环境下防止液体从空气导入部分泄漏，并且可以保持稳定的负压特性，而与液体消耗程度无关。 液体容器包括液体容纳部分，从液体容纳部分向液体使用部分供应液体的液体供应部分，具有允许气体引入液体容纳部分并防止液体的单向阀的阀室 并且气体从液体容纳部分出来，使液体容纳部分与阀室连通的连通路径，具有保持液体容纳空间的体积的功能的机构，以及能够使能或 通过通信路径禁止液体容纳部分和阀室之间的连通。

    Method for manufacturing semiconductor device
    9.
    发明授权
    Method for manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US07066390B2

    公开(公告)日：2006-06-27

    申请号：US09864189

    申请日：2001-05-25

    申请人： Ryoichi Matsumoto

    发明人： Ryoichi Matsumoto

    IPC分类号： G06K7/06

    CPC分类号： H01L29/66772 ,  H01L21/2652 ,  H01L21/76264 ,  H01L21/76267 ,  H01L21/76281

    摘要： A method for manufacturing a semiconductor device suppresses electric charge charged up in a semiconductor layer of an SOI substrate at the time of ion implantation, preventing a BOX layer and a gate oxide from being damaged. A field oxide film is formed on a semiconductor layer formed on a BOX layer. A conductive layer is formed on the field oxide film and a gate oxide film as well. The conductive layer made of amorphous carbon is formed by sputtering and has a thickness of 5 nm to 10 nm. B+ is implanted in the interface between the semiconductor layer and the gate oxide film by an intermediate dose ion implanter. The electric charge generated in the semiconductor layer at the time of ion implantation results in FN current, which is removed through the gate oxide film and the conductive layer.

    摘要翻译： 半导体器件的制造方法抑制在离子注入时在SOI衬底的半导体层中充电的电荷，从而防止BOX层和栅极氧化物被损坏。 在形成在BOX层上的半导体层上形成场氧化膜。 导电层也形成在场氧化膜和栅极氧化膜上。 由无定形碳制成的导电层通过溅射形成，其厚度为5nm至10nm。 通过中间剂量离子注入机将B +注入到半导体层与栅氧化膜之间的界面中。 在离子注入时在半导体层中产生的电荷导致FN电流，其通过栅极氧化物膜和导电层去除。

    Contact structure using barrier metal and method of manufacturing the same
    10.
    发明授权
    Contact structure using barrier metal and method of manufacturing the same 失效
    使用阻挡金属的接触结构及其制造方法

    公开(公告)号：US5920122A

    公开(公告)日：1999-07-06

    申请号：US835060

    申请日：1997-04-03

    申请人： Ryoichi Matsumoto ,  Yoshiyuki Kawazu

    发明人： Ryoichi Matsumoto ,  Yoshiyuki Kawazu

    IPC分类号： H01L21/285 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/485 ,  H01L23/52 ,  H01L23/532

    CPC分类号： H01L23/53223 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S257/915

    摘要： A titanium film is formed in a contact hole defined in a silicon substrate. The titanium film is transformed into a titanium silicide film and a first titanium nitride film by high-temperature lamp anneal. Further, a second titanium nitride film is stacked on the first titanium nitride film. Conditions are applied under which the titanium nitride films are formed into a granular crystal of primarily a (200) orientation. Therefore, barrier characteristics of the titanium nitride films to silicon atoms is not compromised even in the case of a subsequent high-temperature thermal treatment.

    摘要翻译： 在限定在硅衬底中的接触孔中形成钛膜。 通过高温灯退火将钛膜转变成硅化钛膜和第一氮化钛膜。 此外，第二氮化钛膜层叠在第一氮化钛膜上。 施加氮化钛膜形成主要为（200）取向的粒状晶体的条件。 因此，即使在随后的高温热处理的情况下，氮化钛膜与硅原子的阻挡特性也不会受到影响。