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公开(公告)号：US20070291816A1
公开(公告)日：2007-12-20
申请号：US11894453
申请日：2007-08-21
申请人： Boris Volf , Mikhail Belousov , Alexander Gurary
发明人： Boris Volf , Mikhail Belousov , Alexander Gurary
IPC分类号： G01K15/00
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
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公开(公告)号：US07452125B2
公开(公告)日：2008-11-18
申请号：US11894453
申请日：2007-08-21
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
摘要翻译： 提供了用于校准化学气相沉积系统中用于温度检测的高温计的系统和方法。 提供具有包括用于形成共晶的诸如Al或Ag的金属的参考区域的校准晶片，以及没有这种金属的暴露的非参考区域。 反射率测量取自参考区域，温度测量取自非参考区域，在包括金属共晶体的已知熔点的温度范围内。 根据从非参考区获得的温度数据，基于已知共晶熔点与在参考区域中获得的反射率数据的变化的相关性校正高温计。
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公开(公告)号：US20060171442A1
公开(公告)日：2006-08-03
申请号：US11046741
申请日：2005-01-31
申请人： Boris Volf , Mikhail Belousov , Alexander Gurary
发明人： Boris Volf , Mikhail Belousov , Alexander Gurary
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
摘要翻译： 提供了用于校准化学气相沉积系统中用于温度检测的高温计的系统和方法。 提供具有包括用于形成共晶的诸如Al或Ag的金属的参考区域的校准晶片，以及没有这种金属的暴露的非参考区域。 反射率测量取自参考区域，温度测量取自非参考区域，在包括金属共晶体的已知熔点的温度范围内。 根据从非参考区获得的温度数据，基于已知共晶熔点与在参考区域中获得的反射率数据的变化的相关性校正高温计。
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公开(公告)号：US20050286058A1
公开(公告)日：2005-12-29
申请号：US11127834
申请日：2005-05-12
申请人： Mikhail Belousov , Boris Volf
发明人： Mikhail Belousov , Boris Volf
IPC分类号： G01B11/24
CPC分类号： G01B11/24
摘要： A method for monitoring the curvature of a surface of a body such as a semiconductor wafer (22) includes directing a beam of light along an impingement axis (36) onto the surface so that a beam of light (41) is reflected from the surface at a point of impingement. The position of the reflected beam (41) is detected in two dimensions (x,y). The body (22) is moved relative to the impingement axis (41) in a direction transverse to the impingement axis and the beam-directing and position determining steps are repeated. The curvature of the surface is calculated from the detected positions of the reflected beam in a plurality of repetitions.
摘要翻译： 用于监测诸如半导体晶片（22）的主体的表面的曲率的方法包括将光束沿着冲击轴线（36）引导到表面上，使得光束（41）从表面反射 在撞击点。 在二维（x，y）中检测反射光束（41）的位置。 主体（22）相对于冲击轴线（41）在横向于冲击轴线的方向上移动，并且重新进行光束定向和位置确定步骤。 从多个重复的反射光束的检测位置算出表面的曲率。
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公开(公告)号：US07570368B2
公开(公告)日：2009-08-04
申请号：US11127834
申请日：2005-05-12
申请人： Mikhail Belousov , Boris Volf
发明人： Mikhail Belousov , Boris Volf
IPC分类号： G01B11/24
CPC分类号： G01B11/24
摘要： A method for monitoring the curvature of a surface of a body such as a semiconductor wafer (22) includes directing a beam of light along an impingement axis (36) onto the surface so that a beam of light (41) is reflected from the surface at a point of impingement. The position of the reflected beam (41) is detected in two dimensions (x,y). The body (22) is moved relative to the impingement axis (41) in a direction transverse to the impingement axis and the beam-directing and position determining steps are repeated. The curvature of the surface is calculated from the detected positions of the reflected beam in a plurality of repetitions.
摘要翻译： 用于监测诸如半导体晶片（22）的主体的表面的曲率的方法包括将光束沿着冲击轴线（36）引导到表面上，使得光束（41）从表面反射 在撞击点。 在二维（x，y）中检测反射光束（41）的位置。 主体（22）相对于冲击轴线（41）在横向于冲击轴线的方向上移动，并且重新进行光束定向和位置确定步骤。 从多个重复的反射光束的检测位置算出表面的曲率。
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公开(公告)号：US07275861B2
公开(公告)日：2007-10-02
申请号：US11046741
申请日：2005-01-31
申请人： Boris Volf , Mikhail Belousov , Alexander Gurary
发明人： Boris Volf , Mikhail Belousov , Alexander Gurary
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer used in temperature detection in a chemical vapor deposition system is provided. A calibration wafer with a reference region including a metal such as Al or Ag for forming a eutectic, and an exposed non-reference region without such a metal, are provided. Reflectivity measurements are taken from the reference region, and temperature measurements are taken from the non-reference region, over a range of temperatures including a known melting point for the metal eutectic. The pyrometer is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
摘要翻译： 提供了用于校准化学气相沉积系统中用于温度检测的高温计的系统和方法。 提供具有包括用于形成共晶的诸如Al或Ag的金属的参考区域的校准晶片，以及没有这种金属的暴露的非参考区域。 反射率测量取自参考区域，温度测量取自非参考区域，在包括金属共晶体的已知熔点的温度范围内。 根据从非参考区获得的温度数据，基于已知共晶熔点与在参考区域中获得的反射率数据的变化的相关性校正高温计。
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公开(公告)号：US08518633B2
公开(公告)日：2013-08-27
申请号：US12384219
申请日：2009-04-01
申请人： Boris Kobrin , Boris Volf , Igor Landau
发明人： Boris Kobrin , Boris Volf , Igor Landau
IPC分类号： G03B27/42
CPC分类号： G03F7/703 , G03B27/42 , G03F7/70325 , G03F7/7035 , G03F7/70358 , G03F7/704
摘要： Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a rotatable mask is used to image a radiation-sensitive material. Typically the rotatable mask comprises a cylinder. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in contact or close proximity with the substrate. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cylinder surface comprises metal nano holes or nanoparticles.
摘要翻译： 本发明的实施例涉及在大面积基板的纳米图案中有用的方法和装置，其中使用可旋转掩模来对辐射敏感材料成像。 通常，可旋转掩模包括圆筒。 纳米图案技术利用近场光刻技术，其中用于图案化衬底的掩模与衬底接触或接近。 近场光刻可以使用弹性体相移掩模，或者可以采用表面等离子体激元技术，其中旋转圆柱表面包括金属纳米孔或纳米颗粒。
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公开(公告)号：US20100055318A1
公开(公告)日：2010-03-04
申请号：US12549768
申请日：2009-08-28
申请人： Boris Volf , Breid Soderman , Eric A. Armour
发明人： Boris Volf , Breid Soderman , Eric A. Armour
CPC分类号： H01L21/68735 , C23C16/4583 , C23C16/4584 , C23C16/46 , H01L21/67103 , H01L21/68764 , H01L21/68771
摘要： In chemical vapor deposition apparatus, a water carrier (32) has a top surface (34) holding the wafers and a bottom surface (36) heated by radiant heat transfer from a heating element (28). The bottom surface (36) of the wafer carrier is non-planar due to features such as depressions (54) so that the wafer carrier has different thickness at different locations. The thicker portions of the wafer carrier have higher thermal resistance. Differences in thermal resistance at different locations counteract undesired non-uniformities in heat transfer to the wafer. The wafer carrier may have pockets with projections (553, 853) for engaging spaced-apart locations on the edges of the wafer.
摘要翻译： 在化学气相沉积装置中，水载体（32）具有保持晶片的顶表面（34）和从加热元件（28）通过辐射热传递加热的底表面（36）。 由于诸如凹陷（54）的特征，晶片载体的底表面（36）是非平面的，使得晶片载体在不同位置具有不同的厚度。 晶片载体的较厚部分具有较高的热阻。 不同位置的热阻差异抵消了向晶片传热的不均匀不均匀性。 晶片载体可以具有用于接合晶片边缘上的间隔开的位置的突起（553,853）的凹穴。
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公开(公告)号：US08535445B2
公开(公告)日：2013-09-17
申请号：US12855739
申请日：2010-08-13
申请人： Boris Volf , Yuliy Rashkovsky
发明人： Boris Volf , Yuliy Rashkovsky
IPC分类号： C23C16/00 , C23C16/458 , C23C16/46
CPC分类号： H01L21/68764 , C23C16/4586 , H01L21/68728 , H01L21/68771
摘要： A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with locks for restraining wafers against upward movement away from the support surfaces. Constraining the wafers against upward movement limits the effect of wafer distortion on the spacing between the wafer and the floor surfaces, and thus limits the effects of wafer distortion on heat transfer. The carrier may include a main portion and minor portions having higher thermal conductivity than the main portion, the minor portions being disposed below the pockets.
摘要翻译： 用于晶片处理（例如化学气相沉积）中的晶片载体具有用于保持晶片和支撑表面的口袋，以支撑位于口袋的地板上方的晶片。 载体设有用于限制晶片的锁，以防止远离支撑表面的向上移动。 限制晶片对向上移动限制晶片失真对晶片和地板表面之间的间隔的影响，从而限制晶片失真对热传递的影响。 载体可以包括主要部分和具有比主要部分更高的热导率的次要部分，次要部分设置在口袋下方。
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公开(公告)号：US20130065403A1
公开(公告)日：2013-03-14
申请号：US13673340
申请日：2012-11-09
申请人： Ajit Paranjpe , Boris Volf , Eric A. Armour , Sandeep Krishnan , Guanghua Wei , Lukas Urban
发明人： Ajit Paranjpe , Boris Volf , Eric A. Armour , Sandeep Krishnan , Guanghua Wei , Lukas Urban
IPC分类号： B65D85/00 , H01L21/302
CPC分类号： H01L21/68764 , C23C16/4584 , C23C16/4586 , H01L21/67103 , H01L21/68707 , H01L21/68771
摘要： A wafer carrier used in wafer treatments such as chemical vapor deposition has pockets for holding the wafers and support surfaces for supporting the wafers above the floors of the pockets. The carrier is provided with thermal control features such as trenches which form thermal barriers having lower thermal conductivity than surrounding portions of the carrier. These thermal control features promote a more uniform temperature distribution across the wafer surfaces and across the carrier top surface.
摘要翻译： 用于晶片处理（例如化学气相沉积）中的晶片载体具有用于保持晶片和支撑表面的口袋，以支撑位于口袋的地板上方的晶片。 载体具有诸如沟槽的热控制特征，其形成具有比载体周围部分更低热导率的热障。 这些热控制特征促进晶片表面和载体顶表面上的更均匀的温度分布。
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