Etchant and etching method
    3.
    发明申请
    Etchant and etching method 审中-公开
    蚀刻剂和蚀刻方法

    公开(公告)号:US20060011584A1

    公开(公告)日:2006-01-19

    申请号:US10527202

    申请日:2003-08-04

    IPC分类号: B44C1/22 C09K13/00

    CPC分类号: H01L21/31111

    摘要: An etching solution having an etch rate of 2 Å/minute or greater for a film having a relative dielectric constant of 8 or higher (a High-k film, and whose ratio of the etch rate of a thermal oxide (THOX) film to that of a High-k film is ([THOX etch rate]/[High-k film etch rate]) is 50 or less.

    摘要翻译: 对于相对介电常数为8或更高的膜(High-k膜,并且其热氧化物(THOX)膜的蚀刻速率与该氧化物(THOX)膜的蚀刻速率的比率)相对于相对介电常数为8或更高的膜的蚀刻速率为2埃/分钟或更大的蚀刻溶液 的高K膜为([THOX蚀刻速率] / [High-k膜蚀刻速率])为50以下。