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162 条记录 (耗时 0.033 秒)

    Etchant and etching method
    1.
    发明申请
    Etchant and etching method 审中-公开
    蚀刻剂和蚀刻方法

    公开(公告)号：US20060011584A1

    公开(公告)日：2006-01-19

    申请号：US10527202

    申请日：2003-08-04

    申请人： Mitsushi Itano ,  Takashi Kanemura ,  Hiroshi Momota ,  Daisuke Watanabe

    发明人： Mitsushi Itano ,  Takashi Kanemura ,  Hiroshi Momota ,  Daisuke Watanabe

    IPC分类号： B44C1/22 ,  C09K13/00

    CPC分类号： H01L21/31111

    摘要： An etching solution having an etch rate of 2 Å/minute or greater for a film having a relative dielectric constant of 8 or higher (a High-k film, and whose ratio of the etch rate of a thermal oxide (THOX) film to that of a High-k film is ([THOX etch rate]/[High-k film etch rate]) is 50 or less.

    摘要翻译： 对于相对介电常数为8或更高的膜（High-k膜，并且其热氧化物（THOX）膜的蚀刻速率与该氧化物（THOX）膜的蚀刻速率的比率）相对于相对介电常数为8或更高的膜的蚀刻速率为2埃/分钟或更大的蚀刻溶液 的高K膜为（[THOX蚀刻速率] / [High-k膜蚀刻速率]）为50以下。

    ETCHING SOLUTION
    2.
    发明申请
    ETCHING SOLUTION 有权
    蚀刻解决方案

    公开(公告)号：US20100112821A1

    公开(公告)日：2010-05-06

    申请号：US12595424

    申请日：2008-04-08

    申请人： Mitsushi Itano ,  Shingo Nakamura ,  Takehiko Kezuka ,  Daisuke Watanabe

    发明人： Mitsushi Itano ,  Shingo Nakamura ,  Takehiko Kezuka ,  Daisuke Watanabe

    IPC分类号： H01L21/306 ,  C09K13/08

    CPC分类号： C09K13/08 ,  C09K13/00 ,  C09K13/06 ,  C09K15/00 ,  H01L21/02052 ,  H01L21/02063 ,  H01L21/30604 ,  H01L21/31053 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/76814

    摘要： The present invention provides an etching solution in which a change in the composition due to the evaporation of the chemical solution or the like is small, thus reducing the frequency with which the chemical solution must be replaced, and in which the time-dependent change in etch rate is also small, thus allowing uniform etching of a silicon oxide film. Specifically, the present invention relates to an etching solution, a process of producing the same, and an etching process using the same, in which the etching solution includes hydrofluoric acid (a), ammonium fluoride (b), and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia; the concentration of ammonium fluoride (b) is not higher than 8.2 mol/kg, and the total amount of ammonium fluoride (b) and salt (c) formed between hydrogen fluoride and a base having a boiling point higher than that of ammonia is not less than 9.5 mol/kg.

    摘要翻译： 本发明提供了一种蚀刻溶液，其中由于化学溶液等的蒸发而导致的组成变化小，从而降低了化学溶液必须被更换的频率，并且其中时间依赖性变化 蚀刻速率也很小，从而允许均匀蚀刻氧化硅膜。 具体地说，本发明涉及一种蚀刻溶液及其制造方法及使用该方法的蚀刻方法，其中蚀刻溶液包括氢氟酸（a），氟化铵（b）和形成的盐（c） 在氟化氢和沸点高于氨的沸点之间; 氟化铵（b）的浓度不高于8.2mol / kg，氟化氢和沸点高于氨的碱之间形成的氟化铵（b）和盐（c）的总量不是 小于9.5mol / kg。

    Magnetoresistive element and magnetic memory
    5.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US09178137B2

    公开(公告)日：2015-11-03

    申请号：US13963682

    申请日：2013-08-09

    申请人： Youngmin Eeh ,  Katsuya Nishiyama ,  Daisuke Ikeno ,  Toshihiko Nagase ,  Tadashi Kai ,  Daisuke Watanabe

    发明人： Youngmin Eeh ,  Katsuya Nishiyama ,  Daisuke Ikeno ,  Toshihiko Nagase ,  Tadashi Kai ,  Daisuke Watanabe

    IPC分类号： H01L43/08 ,  H01L43/12 ,  H01L27/22

    CPC分类号： H01L43/12 ,  H01L27/226 ,  H01L43/08

    摘要： A magnetoresistive element includes first and magnetic layers, first and second non-magnetic layers and a W layer. Each of the first and second magnetic layers includes an axis of easy magnetization in a direction perpendicular to a film plane. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction. The first non-magnetic layer is provided between the first and second magnetic layers. The second non-magnetic layer is arranged on a surface of the first magnetic layer opposite to a surface on which the first non-magnetic layer is arranged and contains MgO. The W layer is arranged on a surface of the second non-magnetic layer opposite to a surface on which the first magnetic layer is arranged, and is in contact with the surface of the second non-magnetic layer.

    摘要翻译： 磁阻元件包括第一和第二磁性层，第一和第二非磁性层以及W层。 第一和第二磁性层中的每一个包括在垂直于膜平面的方向上易磁化的轴。 第一磁性层具有可变的磁化方向。 第二磁性层具有不变的磁化方向。 第一非磁性层设置在第一和第二磁性层之间。 第二非磁性层布置在第一磁性层的与布置第一非磁性层的表面相对的表面上并且包含MgO。 W层布置在第二非磁性层的与布置第一磁性层的表面相对的表面上，并与第二非磁性层的表面接触。

    Magnetoresistive element
    6.
    发明授权
    Magnetoresistive element 有权
    磁阻元件

    公开(公告)号：US08995181B2

    公开(公告)日：2015-03-31

    申请号：US13963654

    申请日：2013-08-09

    申请人： Daisuke Watanabe ,  Youngmin Eeh ,  Kazuya Sawada ,  Koji Ueda ,  Toshihiko Nagase

    发明人： Daisuke Watanabe ,  Youngmin Eeh ,  Kazuya Sawada ,  Koji Ueda ,  Toshihiko Nagase

    IPC分类号： G11C11/00 ,  G11C11/16 ,  H01L43/02

    CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

    摘要： According to one embodiment, a magnetoresistive element comprises a storage layer having perpendicular magnetic anisotropy with respect to a film plane and having a variable direction of magnetization, a reference layer having perpendicular magnetic anisotropy with respect to the film plane and having an invariable direction of magnetization, a tunnel barrier layer formed between the storage layer and the reference layer and containing O, and an underlayer formed on a side of the storage layer opposite to the tunnel barrier layer. The reference layer comprises a first reference layer formed on the tunnel barrier layer side and a second reference layer formed opposite the tunnel barrier layer. The second reference layer has a higher standard electrode potential than the underlayer.

    摘要翻译： 根据一个实施例，磁阻元件包括相对于膜平面具有垂直磁各向异性且具有可变磁化方向的存储层，具有相对于膜平面具有垂直磁各向异性且具有不变的磁化方向的参考层 形成在存储层和参考层之间并且包含O的隧道势垒层，以及形成在与隧道势垒层相对的存储层侧的底层。 参考层包括形成在隧道势垒层侧的第一参考层和与隧道势垒层相对形成的第二参考层。 第二参考层具有比底层更高的标准电极电位。

    Test apparatus and manufacturing method
    8.
    发明授权
    Test apparatus and manufacturing method 有权
    试验装置及制造方法

    公开(公告)号：US08892381B2

    公开(公告)日：2014-11-18

    申请号：US13044320

    申请日：2011-03-09

    申请人： Daisuke Watanabe ,  Toshiyuki Okayasu

    发明人： Daisuke Watanabe ,  Toshiyuki Okayasu

    IPC分类号： G01R31/26 ,  G06F19/00 ,  G01R31/319 ,  G01R31/3185

    CPC分类号： G01R31/318511 ,  G01R31/31926

    摘要： A test apparatus that tests a plurality of devices under test formed on a wafer under test includes a test substrate that faces the wafer under test and is electrically connected to the devices under test, a programmable device that is provided on the test substrate and changes a logic relationship of output logic data with respect to input logic data, according to program data supplied thereto, a plurality of input/output circuits that are provided on the test substrate to correspond to the devices under test and that each supply the corresponding device under test with a test signal corresponding to the output logic data of the programmable device, and a judging section that judges pass/fail of each device under test, based on operation results of each device under test according to the test signal.

    摘要翻译： 测试在被测晶片上形成的多个待测器件的测试装置包括面向被测晶片并与被测器件电连接的测试基板，设置在测试基板上的可编程器件， 输出逻辑数据相对于输入逻辑数据的逻辑关系，根据提供给其的程序数据，多个输入/输出电路，设置在测试基板上以对应于被测器件，并且每个输入/输出电路提供相应的被测器件 具有与可编程装置的输出逻辑数据相对应的测试信号，以及判定部，根据测试信号，根据被测设备的运算结果，判定各被测设备的通过/失败。

    INFORMATION PROCESSING APPARATUS AND METHOD
    10.
    发明申请
    INFORMATION PROCESSING APPARATUS AND METHOD 有权
    信息处理装置和方法

    公开(公告)号：US20130271577A1

    公开(公告)日：2013-10-17

    申请号：US13976200

    申请日：2011-12-22

    申请人： Daisuke Watanabe ,  Shinji Uchiyama ,  Daisuke Kotake

    发明人： Daisuke Watanabe ,  Shinji Uchiyama ,  Daisuke Kotake

    IPC分类号： H04N13/02

    CPC分类号： H04N13/275 ,  G06T7/75 ,  G06T2207/10004 ,  G06T2207/10028

    摘要： An information processing apparatus includes a model storing unit configured to store a three-dimensional form model for acquiring the position and posture of a measurement target object, an image acquiring unit configured to acquire an image of the measurement target object, a first position and posture acquiring unit configured to acquire a first position and posture of the three-dimensional form model in a first coordinate system on the basis of a first geometric feature of the three-dimensional form model and a first geometric feature within the image, and a second position and posture acquiring unit configured to acquire a second position and posture of the three-dimensional form model in a second coordinate system that is different from the first coordinate system on the basis of a second geometric feature of the three-dimensional form model and a second geometric feature within the image and the first position and posture.

    摘要翻译： 一种信息处理设备，包括：模型存储单元，被配置为存储用于获取测量目标对象的位置和姿势的三维形式模型;图像获取单元，被配置为获取测量目标对象的图像，第一位置和姿势 获取单元，被配置为基于所述三维形式模型的第一几何特征和所述图像内的第一几何特征获取第一坐标系中的所述三维形式模型的第一位置和姿势，以及第二位置 以及姿势获取单元，被配置为基于所述三维形式模型的第二几何特征，在与所述第一坐标系不同的第二坐标系中获取所述三维形式模型的第二位置和姿势;以及第二 图像内的几何特征和第一位置和姿势。