公开(公告)号：US07485576B2

公开(公告)日：2009-02-03

申请号：US11296874

申请日：2005-12-08

申请人： Min-Chul Suh ,  Jae-Bon Koo ,  Taek Ahn ,  Hye-Dong Kim ,  Fischer Joerg ,  Werner Humbs

发明人： Min-Chul Suh ,  Jae-Bon Koo ,  Taek Ahn ,  Hye-Dong Kim ,  Fischer Joerg ,  Werner Humbs

IPC分类号： H01L21/44

CPC分类号： H01L51/0022 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/31691 ,  H01L51/0005 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0097 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/102 ,  Y02E10/549 ,  Y02P70/521

摘要： A method of forming a conductive pattern in which the conductive pattern can be easily formed at a low temperature without a photolithography process by forming the conductive pattern using a laser ablation method and an inkjet method, an organic thin film transistor manufactured using the method, and a method of manufacturing the organic thin film transistor. The method of forming a conductive pattern in a flat panel display device includes preparing a base member, forming a groove having the same shape as the conductive pattern in the base member, and forming the conductive pattern by applying a conductive material into the groove. The base member has one of a structure including a plastic substrate having the groove and a structure including a substrate and an insulating layer which is arranged on the substrate and which has the groove.

摘要翻译： 一种形成导电图案的方法，其中通过使用激光烧蚀法和喷墨法形成导电图案，使用该方法制造的有机薄膜晶体管可以在没有光刻工艺的低温下容易地形成导电图案，使用该方法制造的有机薄膜晶体管，以及 制造有机薄膜晶体管的方法。 在平板显示装置中形成导电图案的方法包括制备基底构件，在基底构件中形成具有与导电图案相同形状的凹槽，并且通过将导电材料施加到凹槽中来形成导电图案。 所述基座构件具有包括具有所述凹槽的塑料基板和包括基板和绝缘层的结构的结构之一，所述结构布置在所述基板上并具有所述凹槽。

公开(公告)号：US20060145146A1

公开(公告)日：2006-07-06

申请号：US11296874

申请日：2005-12-08

申请人： Min-Chul Suh ,  Jae-Bon Koo ,  Taek Ahn ,  Hye-Dong Kim ,  Fischer Joerg ,  Werner Humbs

发明人： Min-Chul Suh ,  Jae-Bon Koo ,  Taek Ahn ,  Hye-Dong Kim ,  Fischer Joerg ,  Werner Humbs

IPC分类号： H01L29/08 ,  B05D5/06

CPC分类号： H01L51/0022 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/31691 ,  H01L51/0005 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0097 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/102 ,  Y02E10/549 ,  Y02P70/521

摘要： A method of forming a conductive pattern in which the conductive pattern can be easily formed at a low temperature without a photolithography process by forming the conductive pattern using a laser ablation method and an inkjet method, an organic thin film transistor manufactured using the method, and a method of manufacturing the organic thin film transistor. The method of forming a conductive pattern in a flat panel display device includes preparing a base member, forming a groove having the same shape as the conductive pattern in the base member, and forming the conductive pattern by applying a conductive material into the groove. The base member has one of a structure including a plastic substrate having the groove and a structure including a substrate and an insulating layer which is arranged on the substrate and which has the groove.

公开(公告)号：US20060103290A1

公开(公告)日：2006-05-18

申请号：US11267740

申请日：2005-11-04

申请人： Min-Chul Suh ,  Jae-Bon Koo ,  Hye-Dong Kim

发明人： Min-Chul Suh ,  Jae-Bon Koo ,  Hye-Dong Kim

IPC分类号： H01J29/10

CPC分类号： H01L51/5296 ,  H01L27/3244 ,  H01L51/5203 ,  H01L51/56

摘要： An EL device with low manufacturing costs and improved yield due to simplified structure and use of an organic light emitting transistor and a method of manufacturing the same are disclosed. The EL device includes: a first organic light emitting transistor including a first source electrode; a first drain electrode opposing the first source electrode; a first intermediate layer including at least an emission layer formed between the first source electrode and the first drain electrode; and a first gate electrode which is insulated from the first source electrode, the first drain electrode, and the first intermediate layer and surrounds the first intermediate layer; and a second organic light emitting transistor including a second source electrode; a second drain electrode opposing the second source electrode; a second intermediate layer including at least an emission layer formed between the second source electrode and the second drain electrode; and a second gate electrode which is insulated from the second source electrode, the second drain electrode, and the second intermediate layer, surrounds the second intermediate layer, and is connected to the first drain electrode.

摘要翻译： 公开了一种由于简化了有机发光晶体管的结构和使用而制造成本低和产量提高的EL器件及其制造方法。 EL器件包括：第一有机发光晶体管，包括第一源电极; 与第一源电极相对的第一漏电极; 至少包括形成在第一源极和第一漏电极之间的发光层的第一中间层; 以及第一栅电极，其与所述第一源电极，所述第一漏电极和所述第一中间层绝缘并且包围所述第一中间层; 和包括第二源电极的第二有机发光晶体管; 与第二源电极相对的第二漏电极; 至少包括形成在所述第二源电极和所述第二漏电极之间的发光层的第二中间层; 并且与第二源电极，第二漏电极和第二中间层绝缘的第二栅电极围绕第二中间层，并且连接到第一漏电极。

公开(公告)号：US20060011917A1

公开(公告)日：2006-01-19

申请号：US11167157

申请日：2005-06-28

申请人： Jae-Bon Koo ,  Hye-Dong Kim ,  Min-Chul Suh

发明人： Jae-Bon Koo ,  Hye-Dong Kim ,  Min-Chul Suh

IPC分类号： H01L29/76 ,  H01L29/04

CPC分类号： H01L27/12 ,  H01L27/1248 ,  H01L29/78606

摘要： A thin film transistor that does not deform or exfoliate due to thermal or mechanical stress, a flat panel display having the same, and a method manufacturing the same, the thin film transistor including a substrate, a patterned buffer layer disposed on the substrate, a patterned active layer disposed on the buffer layer, a gate electrode insulated from the active layer, and a source electrode and a drain electrode that contact the active layer and are insulated from the gate electrode.

摘要翻译： 一种由于热或机械应力而不会变形或剥落的薄膜晶体管，具有该薄膜晶体管的平板显示器及其制造方法，所述薄膜晶体管包括基板，设置在基板上的图案化缓冲层， 设置在缓冲层上的图案化有源层，与有源层绝缘的栅极电极以及与有源层接触并与栅电极绝缘的源电极和漏电极。

公开(公告)号：US20050269562A1

公开(公告)日：2005-12-08

申请号：US11126300

申请日：2005-05-11

申请人： Nam-Choul Yang ,  Hye-Dong Kim ,  Min-Chul Suh ,  Jae-Bon Koo ,  Sang-Min Lee

发明人： Nam-Choul Yang ,  Hye-Dong Kim ,  Min-Chul Suh ,  Jae-Bon Koo ,  Sang-Min Lee

IPC分类号： H01L51/50 ,  G02F1/136 ,  H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H05B33/14

CPC分类号： H01L51/0545 ,  H01L27/3244 ,  H01L51/0036 ,  H01L51/0055 ,  H01L51/0541

摘要： A Thin Film Transistor (TFT) includes: a gate electrode; a source electrode and a drain electrode each insulated from the gate electrode; and an organic semiconductor layer adapted to contact each of the source and drain electrodes, the organic semiconductor layer being insulated from the gate electrode; wherein the organic semiconductor layer includes a boundary region having a smaller grain size than other portions of the organic semiconductor layer, the boundary region being arranged around at least a channel region and a source and drain region of the organic semiconductor layer.

摘要翻译： 薄膜晶体管（TFT）包括：栅电极; 源极电极和漏极电极，各自与栅电极绝缘; 以及适于接触所述源电极和漏电极中的每一个的有机半导体层，所述有机半导体层与所述栅电极绝缘; 其中所述有机半导体层包括具有比所述有机半导体层的其它部分更小的晶粒尺寸的边界区域，所述边界区域布置在所述有机半导体层的至少沟道区域和源极和漏极区域周围。

公开(公告)号：US08043887B2

公开(公告)日：2011-10-25

申请号：US12641277

申请日：2009-12-17

申请人： Nam-Choul Yang ,  Hye-Dong Kim ,  Min-Chul Suh ,  Jae-Bon Koo ,  Sang-Min Lee ,  Hun-Jung Lee

发明人： Nam-Choul Yang ,  Hye-Dong Kim ,  Min-Chul Suh ,  Jae-Bon Koo ,  Sang-Min Lee ,  Hun-Jung Lee

IPC分类号： H01L51/40

CPC分类号： H01L51/0015 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0512

摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.

摘要翻译： 公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。 薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。 有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

公开(公告)号：US20100291716A1

公开(公告)日：2010-11-18

申请号：US12841033

申请日：2010-07-21

申请人： Min-Chul Suh ,  Jae-Bon Koo ,  Hye-Dong Kim

发明人： Min-Chul Suh ,  Jae-Bon Koo ,  Hye-Dong Kim

IPC分类号： H01L51/56

CPC分类号： H01L51/5296 ,  H01L27/3244 ,  H01L51/5203 ,  H01L51/56

摘要： An EL device with low manufacturing costs and improved yield due to simplified structure and use of an organic light emitting transistor and a method of manufacturing the same are disclosed. The EL device includes: a first organic light emitting transistor including a first source electrode; a first drain electrode opposing the first source electrode; a first intermediate layer including at least an emission layer formed between the first source electrode and the first drain electrode; and a first gate electrode which is insulated from the first source electrode, the first drain electrode, and the first intermediate layer and surrounds the first intermediate layer; and a second organic light emitting transistor including a second source electrode; a second drain electrode opposing the second source electrode; a second intermediate layer including at least an emission layer formed between the second source electrode and the second drain electrode; and a second gate electrode which is insulated from the second source electrode, the second drain electrode, and the second intermediate layer, surrounds the second intermediate layer, and is connected to the first drain electrode.

摘要翻译： 公开了一种由于简化了有机发光晶体管的结构和使用而制造成本低和产量提高的EL器件及其制造方法。 EL器件包括：第一有机发光晶体管，包括第一源电极; 与第一源电极相对的第一漏电极; 至少包括形成在第一源极和第一漏电极之间的发光层的第一中间层; 以及第一栅电极，其与所述第一源电极，所述第一漏电极和所述第一中间层绝缘并且包围所述第一中间层; 和包括第二源电极的第二有机发光晶体管; 与第二源电极相对的第二漏电极; 至少包括形成在所述第二源电极和所述第二漏电极之间的发光层的第二中间层; 并且与第二源电极，第二漏电极和第二中间层绝缘的第二栅电极围绕第二中间层，并且连接到第一漏电极。

公开(公告)号：US07800300B2

公开(公告)日：2010-09-21

申请号：US11267740

申请日：2005-11-04

申请人： Min-Chul Suh ,  Jae-Bon Koo ,  Hye-Dong Kim

发明人： Min-Chul Suh ,  Jae-Bon Koo ,  Hye-Dong Kim

IPC分类号： H01L35/24 ,  H01L29/04 ,  G02F1/33

CPC分类号： H01L51/5296 ,  H01L27/3244 ,  H01L51/5203 ,  H01L51/56

摘要： An electroluminescent display device is disclosed. The device includes electroluminescent transistors which function as both signal switches and as electroluminescent light sources for the display pixels.

摘要翻译： 公开了电致发光显示装置。 该器件包括用作信号开关和用作显示像素的电致发光光源的电致发光晶体管。

公开(公告)号：US07442960B2

公开(公告)日：2008-10-28

申请号：US11131233

申请日：2005-05-18

申请人： Min-Chul Suh ,  Nam-Choul Yang ,  Jae-Bon Koo ,  Tae-Min Kang ,  Hye-dong Kim

发明人： Min-Chul Suh ,  Nam-Choul Yang ,  Jae-Bon Koo ,  Tae-Min Kang ,  Hye-dong Kim

IPC分类号： H01L21/84

CPC分类号： H01L29/66742 ,  H01L21/76264 ,  H01L27/1222 ,  H01L27/1248 ,  H01L29/78606 ,  H01L29/78681

摘要： A thin film transistor (TFT) including a semiconductor film that may be simply patterned, a method of manufacturing the TFT, a flat panel display (FPD) including the TFT, and a method of manufacturing the FPD. The TFT includes a gate electrode, source and drain electrodes electrically insulated from the gate electrode, and a semiconductor film electrically insulated from the gate electrode and including source and drain regions coupled to the source and drain electrodes, respectively, and a channel region coupling the source and drain regions. The semiconductor film has a groove that isolates the channel region from an adjacent TFT.

摘要翻译： 一种薄膜晶体管（TFT），其包括可以被简单地构图的半导体膜，TFT的制造方法，包括TFT的平板显示器（FPD）以及FPD的制造方法。 TFT包括栅电极，与栅电极电绝缘的源电极和漏电极以及与栅电极电绝缘并且分别耦合到源电极和漏电极的源极和漏极区域的半导体膜以及耦合到栅极电极的沟道区域 源极和漏极区域。 半导体膜具有将沟道区域与相邻TFT隔离的沟槽。

公开(公告)号：US20060138405A1

公开(公告)日：2006-06-29

申请号：US11298211

申请日：2005-12-09

申请人： Nam-Choul Yang ,  Hye-Dong Kim ,  Min-Chul Suh ,  Jae-Bon Koo ,  Sang-Min Lee ,  Hun-Jung Lee

发明人： Nam-Choul Yang ,  Hye-Dong Kim ,  Min-Chul Suh ,  Jae-Bon Koo ,  Sang-Min Lee ,  Hun-Jung Lee

IPC分类号： H01L29/08

CPC分类号： H01L51/0015 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0512

摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.

摘要翻译： 公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。 薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。 有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。