公开(公告)号：US07993956B2

公开(公告)日：2011-08-09

申请号：US11618685

申请日：2006-12-29

申请人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

发明人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

IPC分类号： H01L21/00

CPC分类号： H01L31/103 ,  H01L27/14609 ,  H01L31/105

摘要： An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

摘要翻译： 用于将入射光信号转换成电信号的集成电路装置包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区上的电介质层和用于接收入射光信号的多晶硅层，形成 包括p型部分，n型部分和设置在p型和n型部分之间的未掺杂部分，其中阱区被偏置以控制多晶硅层以提供电信号 。

公开(公告)号：US06750515B2

公开(公告)日：2004-06-15

申请号：US10062714

申请日：2002-02-05

申请人： Ming-Dou Ker ,  Kei-Kang Hung ,  Chyh-Yih Chang

发明人： Ming-Dou Ker ,  Kei-Kang Hung ,  Chyh-Yih Chang

IPC分类号： H01L2776

CPC分类号： H01L27/0262 ,  H01L27/1203

摘要： A silicon-on-isolator CMOS integrated circuit device includes a semiconductor substrate, an isolation layer formed over the semiconductor substrate, an n-type MOS transistor having a gate, a drain region, and a source region formed over the isolation layer, and a p-type MOS transistor having a gate, a drain region, and a source region formed over the isolation layer and contiguous with the n-type MOS transistor, wherein the n-type MOS transistor and the p-type MOS transistor form a silicon controlled rectifier to provide electrostatic discharge protection.

摘要翻译： 硅隔离器CMOS集成电路器件包括半导体衬底，形成在半导体衬底上的隔离层，具有形成在隔离层上的栅极，漏极区域和源极区域的n型MOS晶体管，以及 p型MOS晶体管，其具有形成在隔离层上并与n型MOS晶体管邻接的栅极，漏极区域和源极区域，其中n型MOS晶体管和p型MOS晶体管形成硅控制 整流器提供静电放电保护。

公开(公告)号：US08367457B2

公开(公告)日：2013-02-05

申请号：US13205017

申请日：2011-08-08

申请人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

发明人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

IPC分类号： H01L21/00

CPC分类号： H01L31/103 ,  H01L27/14609 ,  H01L31/105

摘要： An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

摘要翻译： 用于将入射光信号转换成电信号的集成电路装置包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区上的电介质层和用于接收入射光信号的多晶硅层，形成 包括p型部分，n型部分和设置在p型和n型部分之间的未掺杂部分，其中阱区被偏置以控制多晶硅层以提供电信号 。

公开(公告)号：US07439597B2

公开(公告)日：2008-10-21

申请号：US11618247

申请日：2006-12-29

申请人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

发明人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

IPC分类号： H01L27/14

CPC分类号： H01L31/103 ,  H01L27/14609 ,  H01L31/105

摘要： An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

摘要翻译： 用于将入射光信号转换成电信号的集成电路装置包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区上的电介质层和用于接收入射光信号的多晶硅层，形成 包括p型部分，n型部分和设置在p型和n型部分之间的未掺杂部分，其中阱区被偏置以控制多晶硅层以提供电信号 。

公开(公告)号：US07205641B2

公开(公告)日：2007-04-17

申请号：US11017053

申请日：2004-12-21

申请人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

发明人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

IPC分类号： H01L31/075

CPC分类号： H01L31/03529 ,  H01L27/0255 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/02019 ,  H01L31/105 ,  Y02E10/50

摘要： An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

摘要翻译： 用于将入射光信号转换成电信号的集成电路装置包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区上的电介质层和用于接收入射光信号的多晶硅层，形成 包括p型部分，n型部分和设置在p型和n型部分之间的未掺杂部分，其中阱区被偏置以控制多晶硅层以提供电信号 。

公开(公告)号：US20050110060A1

公开(公告)日：2005-05-26

申请号：US11017053

申请日：2004-12-21

申请人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

发明人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/062 ,  H01L31/105

CPC分类号： H01L31/03529 ,  H01L27/0255 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/02019 ,  H01L31/105 ,  Y02E10/50

摘要： An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

摘要翻译： 用于将入射光信号转换成电信号的集成电路装置包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区上的电介质层和用于接收入射光信号的多晶硅层，形成 包括p型部分，n型部分和设置在p型和n型部分之间的未掺杂部分，其中阱区被偏置以控制多晶硅层以提供电信号 。

公开(公告)号：US06437407B1

公开(公告)日：2002-08-20

申请号：US09706807

申请日：2000-11-07

申请人： Ming-Dou Ker ,  Chyh-Yih Chang

发明人： Ming-Dou Ker ,  Chyh-Yih Chang

IPC分类号： H01L2362

CPC分类号： H01L27/0251

摘要： A charged-device model (CDM) electrostatic discharge (ESD) protection for complementary metal oxide semiconductor (CMOS) integrated circuits such as input/output (I/O) circuits. A CDM ESD clamp device is disposed on an output buffer or an input stage of the CMOS circuit in order to clamp the CDM ESD overstress voltage across the gate oxide during a CDM ESD event. When applied to I/O circuits, a bi-directional diode string with multiple diodes is used in conjunction with the CDM ESD clamp device. During the CDM ESD event, CDM charges (CDM Q) originally stored in the common substrate are discharged through the desired CDM ESD clamp device so as to protect all functional devices in the input, output or I/O circuits, and effectively improve the CDM ESD level in integrated circuit (IC) products.

摘要翻译： 用于互补金属氧化物半导体（CMOS）集成电路（例如输入/输出（I / O））电路的充电器件型号（CDM）静电放电（ESD）保护。 CDM ESD钳位器件设置在CMOS电路的输出缓冲器或输入级上，以便在CDM ESD事件期间钳位栅极氧化物上的CDM ESD过应力电压。 当应用于I / O电路时，具有多个二极管的双向二极管串与CDM ESD钳位装置结合使用。 在CDM ESD事件期间，原始存储在公共基板中的CDM充电（CDM Q）通过所需的CDM ESD钳位装置放电，以保护输入，输出或I / O电路中的所有功能器件，并有效改善CDM 集成电路（IC）产品中的ESD电平。

公开(公告)号：US20110294253A1

公开(公告)日：2011-12-01

申请号：US13205017

申请日：2011-08-08

申请人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

发明人： Yu-Da Shiu ,  Chyh-Yih Chang ,  Ming-Dou Ker ,  Che-Hao Chuang

IPC分类号： H01L31/18

CPC分类号： H01L31/103 ,  H01L27/14609 ,  H01L31/105

摘要： An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.

摘要翻译： 用于将入射光信号转换成电信号的集成电路装置包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区上的电介质层和用于接收入射光信号的多晶硅层，形成 包括p型部分，n型部分和设置在p型和n型部分之间的未掺杂部分，其中阱区被偏置以控制多晶硅层以提供电信号 。

公开(公告)号：US20070235808A1

公开(公告)日：2007-10-11

申请号：US11627088

申请日：2007-01-25

申请人： Chyh-Yih Chang ,  Ming-dou Ker

发明人： Chyh-Yih Chang ,  Ming-dou Ker

IPC分类号： H01L23/62

CPC分类号： H01L31/03529 ,  H01L27/0255 ,  H01L27/14609 ,  H01L27/14643 ,  H01L29/0649 ,  H01L29/16 ,  H01L29/407 ,  H01L29/66136 ,  H01L29/7391 ,  H01L29/861 ,  H01L31/105 ,  Y02E10/50 ,  Y10S977/723

摘要： An integrated circuit device that includes a semiconductor substrate, a well region formed inside the semiconductor substrate, a first isolation structure formed inside the well region, a second isolation structure formed inside the well region and spaced apart from the first isolation structure, a dielectric layer formed over the well region, and a layer of silicon, formed over the dielectric layer, including a p-type portion, an n-type portion and a center portion disposed between the p-type and n-type portions.

摘要翻译： 一种集成电路器件，包括半导体衬底，形成在半导体衬底内部的阱区，形成在阱区内部的第一隔离结构，形成在阱区内并与第一隔离结构隔开的第二隔离结构，介电层 形成在阱区上方，形成在电介质层上的硅层，包括p型部分，n型部分和设置在p型和n型部分之间的中心部分。

公开(公告)号：US07138804B2

公开(公告)日：2006-11-21

申请号：US10810645

申请日：2004-03-29

申请人： Ming-Dou Ker ,  Chyh-Yih Chang ,  Chun-Lin Hou

发明人： Ming-Dou Ker ,  Chyh-Yih Chang ,  Chun-Lin Hou

IPC分类号： G01N27/60 ,  G01R31/26

CPC分类号： G01R31/002

摘要： A system for measuring electrostatic discharge (ESD) characteristics of a semiconductor device that comprises at least one pulse generator generating ESD-scale pulses, a first point of the semiconductor device receiving a first ESD-scale pulse from the at least one pulse generator, a second point of the semiconductor device receiving the first ESD-scale pulse from the at least one pulse generator, at least a third point of the semiconductor device receiving a second ESD-scale pulse from the at least one pulse generator, and a data collector to collect data on the ESD characteristics of the semiconductor device.

摘要翻译： 一种用于测量半导体器件的静电放电（ESD）特性的系统，包括至少一个产生ESD标度脉冲的脉冲发生器，所述半导体器件的第一点从所述至少一个脉冲发生器接收第一ESD标度脉冲， 所述半导体器件的第二点从所述至少一个脉冲发生器接收所述第一ESD标尺脉冲，所述半导体器件的至少第三点从所述至少一个脉冲发生器接收第二ESD标度脉冲，以及数据收集器 收集关于半导体器件的ESD特性的数据。