摘要:
An improved voltage reference generator is provided. The voltage reference generator comprises: a first transistor having a gate electrode biased to place the first transistor in a weak inversion mode; and a second transistor connected in series with said first transistor and having a gate electrode biased to place the second transistor in a weak inversion mode, where the threshold voltage of the first transistor is smaller than the threshold voltage of the second transistor and the gate electrode of the second transistor is electrically coupled to a drain electrode of the second transistor and the source electrode of the first transistor to form an output for a reference voltage.
摘要:
An improved voltage reference generator is provided. The voltage reference generator comprises: a first transistor having a gate electrode biased to place the first transistor in a weak inversion mode; and a second transistor connected in series with said first transistor and having a gate electrode biased to place the second transistor in a weak inversion mode, where the threshold voltage of the first transistor is smaller than the threshold voltage of the second transistor and the gate electrode of the second transistor is electrically coupled to a drain electrode of the second transistor and the source electrode of the first transistor to form an output for a reference voltage.
摘要:
An improved reference current generator is provided. A voltage difference generator generates two voltages that are separated by a relatively small electrical potential. The two closely separated voltages are applied across a resistive element with relatively large impedance value resulting in a small and stable reference current. The result is a power efficient, temperature compensated reference current generator.
摘要:
An improved reference current generator is provided. A voltage difference generator generates two voltages that are separated by a relatively small electrical potential. The two closely separated voltages are applied across a resistive element with relatively large impedance value resulting in a small and stable reference current. The result is a power efficient, temperature compensated reference current generator.
摘要:
There is provided a memory for storing data comprising: a fast data reading mechanism operable to read a data value from said memory to generate a fast read result that is output from said memory for further processing; a slow data reading mechanism operable to read said data value from said memory to generate a slow read result available after said fast read result has been output for further processing, said slow data reading mechanism being less prone to error in reading said data value than said fast data reading mechanism; a comparator operable to compare said fast read result and said slow read result to detect if said fast read result differs from said slow read result; and error repair logic operable if said comparator detects that said fast read result differs from said slow read result to suppress said further processing using said fast read result, to output said slow read result in place of said fast read result and to restart said further processing based upon said slow read result.
摘要:
An embodiment of the invention provides a tool for modifying a mask design layout to be printed. The tool is executed by a computer system, and includes code for establishing a first level of correction for a mask design layout for a predetermined parametric yield without cost of correction to area of the mask design layout. The tool also includes code for correcting the mask design layout at said first level of correction based on a correction algorithm, the correction algorithm selecting a cell of the mask design layout having an edge placement error (EPE) for each gate feature in the cell. The correction algorithm selects the cell without loss to parametric yield as established by the predetermined parametric yield.
摘要:
A method for performing a mask design layout resolution enhancement includes determining a level of correction for the design layout for a predetermined parametric yield with a minimum total correction cost. The design layout is corrected at the determined level of correction based on a correction algorithm if the correction is required. In this manner, only those printed features on the design layout that are critical for obtaining the desired performance yield are corrected, thereby reducing the total cost of correction of the design layout.
摘要:
A data processing apparatus is provided having a cache memory comprising a data storage array and a tag array and a cache controller coupled to the cache memory responsive to a cache access request from processing circuitry to perform cache look ups. The cache memory is arranged such that it has a first memory cell group configured to operate in a first voltage domain and a second memory cell group configured to operate in a second voltage domain that is different from the first voltage domain. A corresponding data processing method is also provided.
摘要:
A method for performing a mask design layout resolution enhancement includes determining a level of correction for a mask design layout for a predetermined parametric yield with a minimum total correction cost. The mask design layout is corrected at a determined level of correction based on a correction algorithm if the correction is required. In this manner, only those printed features on the mask design layout that are critical for obtaining a desired performance yield are corrected, thereby reducing total cost of correction of the mask design layout.
摘要:
An improved receiver circuit for use on an integrated chip is disclosed. The receiver circuit is interposed in an interconnect line between electrical components in an integrated circuit. The receiver circuit has a transition detection circuit that generates a transition signal in response to a detection of a transition from a first state to a second state on the interconnect line and further generates the transition signal in response to a detection of a transition from the second state to the first state on said interconnect line. The receiver further includes an output signal control circuit that, in response to the transition signal, selectively outputs either a present state of said interconnect line or a next state of the interconnect line stored in the receiver.