公开(公告)号：US08395106B2

公开(公告)日：2013-03-12

申请号：US12535263

申请日：2009-08-04

申请人： Minoru Doshida ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hiroyasu Yamashita ,  Hironori Nishino ,  Yusuke Matsukura ,  Yasuhito Uchiyama

发明人： Minoru Doshida ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hiroyasu Yamashita ,  Hironori Nishino ,  Yusuke Matsukura ,  Yasuhito Uchiyama

IPC分类号： G02F1/01

CPC分类号： H01L33/08 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/101 ,  H01L33/06 ,  H01L33/16 ,  H01L33/30

摘要： An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.

摘要翻译： 一种光学半导体器件包括形成在半导体衬底上的下电极层，形成在下电极层26上的红外吸收层和形成在红外吸收层36上的上电极层38.红外吸收层包括具有 尺寸在堆叠方向不同，并且对于与偏振方向不同的波长的红外辐射敏感。

公开(公告)号：US20100032552A1

公开(公告)日：2010-02-11

申请号：US12535263

申请日：2009-08-04

申请人： Minoru Doshida ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hiroyasu Yamashita ,  Hironori Nishino ,  Yusuke Matsukura ,  Yasuhito Uchiyama

发明人： Minoru Doshida ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hiroyasu Yamashita ,  Hironori Nishino ,  Yusuke Matsukura ,  Yasuhito Uchiyama

IPC分类号： G01J1/42 ,  H01L31/0352 ,  H01L31/0232 ,  H01L31/0256 ,  H01L33/00

CPC分类号： H01L33/08 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/101 ,  H01L33/06 ,  H01L33/16 ,  H01L33/30

摘要： An optical semiconductor device includes a lower electrode layer formed over a semiconductor substrate, an infrared absorption layer formed over the lower electrode layer 26, and an upper electrode layer 38 formed over the infrared absorption layer 36. The infrared absorption layer includes a quantum dot having dimensions different among directions stacked, and is sensitive to infrared radiation of wavelengths different corresponding to polarization directions.

摘要翻译： 一种光学半导体器件包括形成在半导体衬底上的下电极层，形成在下电极层26上的红外吸收层和形成在红外吸收层36上的上电极层38.红外吸收层包括具有 尺寸在堆叠方向不同，并且对于与偏振方向不同的波长的红外辐射敏感。

公开(公告)号：US20100032652A1

公开(公告)日：2010-02-11

申请号：US12534421

申请日：2009-08-03

申请人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

发明人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

IPC分类号： H01L31/101 ,  H01L31/0304

CPC分类号： B82Y20/00 ,  B82Y30/00 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/101 ,  Y02E10/544

摘要： An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.

摘要翻译： 包括中间层的层结构的红外光电检测器和具有比中间层窄的带隙并且包括交替堆叠的多个量子点的量子点层，并且检测当将红外辐射施加到层结构时产生的光电流 从而检测红外辐射，所述红外光电检测器还包括设置在所述量子点层的一侧且具有比所述中间层更大的带隙的第一阻挡层; 以及设置在量子点层的另一侧上并且具有比中间层更大的带隙的第二阻挡层。

公开(公告)号：US08373155B2

公开(公告)日：2013-02-12

申请号：US12534421

申请日：2009-08-03

申请人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

发明人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

IPC分类号： H01L31/09

CPC分类号： B82Y20/00 ,  B82Y30/00 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/101 ,  Y02E10/544

摘要： An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.

摘要翻译： 包括中间层的层结构的红外光电检测器和具有比中间层窄的带隙并且包括交替堆叠的多个量子点的量子点层，并且检测当将红外辐射施加到层结构时产生的光电流 从而检测红外辐射，所述红外光电检测器还包括设置在所述量子点层的一侧且具有比所述中间层更大的带隙的第一阻挡层; 以及设置在量子点层的另一侧上并且具有比中间层更大的带隙的第二阻挡层。

公开(公告)号：US20100032651A1

公开(公告)日：2010-02-11

申请号：US12534220

申请日：2009-08-03

申请人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Ryo Suzuki ,  Yasuhito Uchiyama ,  Hironori Nishino

发明人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Ryo Suzuki ,  Yasuhito Uchiyama ,  Hironori Nishino

IPC分类号： H01L31/101

CPC分类号： H01L31/101 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/03046 ,  H01L31/0352 ,  Y02E10/544

摘要： A quantum dot infrared photodetector includes a quantum dot structure including intermediate layers, and a quantum dot layer sandwiched between the intermediate layers and including quantum dots whose energy potential is low for carriers, the intermediate layers and the quantum dots being formed of a III-V compound semiconductor with the V element being As, and an AlAs layer being provided on one of the interfaces between the intermediate layers and the quantum dot layer including the quantum dots and covering at least the quantum dots.

摘要翻译： 量子点红外光电探测器包括一个包括中间层的量子点结构和夹在中间层之间的量子点层，其中载流子能量电位低的量子点，中间层和量子点由III-V V元素为As的化合物半导体，并且AlAs层设置在中间层之间的界面之一和包括量子点的量子点层并且至少覆盖量子点。