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13 条记录 (耗时 0.027 秒)

    INFRARED PHOTODETECTOR
    3.
    发明申请
    INFRARED PHOTODETECTOR 有权
    红外光电转换器

    公开(公告)号：US20100032652A1

    公开(公告)日：2010-02-11

    申请号：US12534421

    申请日：2009-08-03

    申请人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

    发明人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

    IPC分类号： H01L31/101 ,  H01L31/0304

    CPC分类号： B82Y20/00 ,  B82Y30/00 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/101 ,  Y02E10/544

    摘要： An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.

    摘要翻译： 包括中间层的层结构的红外光电检测器和具有比中间层窄的带隙并且包括交替堆叠的多个量子点的量子点层，并且检测当将红外辐射施加到层结构时产生的光电流 从而检测红外辐射，所述红外光电检测器还包括设置在所述量子点层的一侧且具有比所述中间层更大的带隙的第一阻挡层; 以及设置在量子点层的另一侧上并且具有比中间层更大的带隙的第二阻挡层。

    Infrared photodetector
    4.
    发明授权
    Infrared photodetector 有权
    红外光电探测器

    公开(公告)号：US08373155B2

    公开(公告)日：2013-02-12

    申请号：US12534421

    申请日：2009-08-03

    申请人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

    发明人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

    IPC分类号： H01L31/09

    CPC分类号： B82Y20/00 ,  B82Y30/00 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/101 ,  Y02E10/544

    摘要： An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.

    摘要翻译： 包括中间层的层结构的红外光电检测器和具有比中间层窄的带隙并且包括交替堆叠的多个量子点的量子点层，并且检测当将红外辐射施加到层结构时产生的光电流 从而检测红外辐射，所述红外光电检测器还包括设置在所述量子点层的一侧且具有比所述中间层更大的带隙的第一阻挡层; 以及设置在量子点层的另一侧上并且具有比中间层更大的带隙的第二阻挡层。

    Multi-quantum well infrared photo-detector
    7.
    发明授权
    Multi-quantum well infrared photo-detector 失效
    多量子阱红外光电探测器

    公开(公告)号：US06504222B1

    公开(公告)日：2003-01-07

    申请号：US09473156

    申请日：1999-12-28

    申请人： Yoshihiro Miyamoto ,  Hironori Nishino ,  Yusuke Matsukura ,  Toshio Fujii

    发明人： Yoshihiro Miyamoto ,  Hironori Nishino ,  Yusuke Matsukura ,  Toshio Fujii

    IPC分类号： H01L3100

    CPC分类号： B82Y20/00 ,  H01L31/035236 ,  H01L31/101

    摘要： A multi-quantum well infrared photo-detector, in which a plurality of multi-quantum well layers having respective sensitivities for different wavelength ranges of infrared are layered via a common contact layer. The infrared photo-detector includes a switch where one end is connected to the above common contact layer, and a current integration unit which is connected to the other end of the above switch. First and second voltages are applied to first and second contact layers at the opposite side of first and second multi-quantum well layer respectively. The above switch is conducted for a predetermined time so that either voltage between the above common contact layer and the first contact layer or voltage between the above common contact layer and the second contact layer becomes higher than the other, and the above current integration unit is charged or discharged by the current which flows in the above multi-quantum well layers.

    摘要翻译： 一种多量子阱红外光电检测器，其中通过公共接触层层叠具有用于红外线的不同波长范围的各自灵敏度的多个多量子阱层。 红外光检测器包括一端连接到上述公共接触层的开关，以及连接到上述开关的另一端的电流积分单元。 第一和第二电压分别施加到第一和第二多量子阱层的相反侧的第一和第二接触层。 上述开关进行预定时间，使得上述公共接触层和第一接触层之间的电压或上述公共接触层和第二接触层之间的电压变得高于另一个，并且上述电流积分单元是 由在上述多量子阱层中流动的电流充电或放电。

    Photodetecting device and method of manufacturing the same
    9.
    发明授权
    Photodetecting device and method of manufacturing the same 有权
    光检测装置及其制造方法

    公开(公告)号：US07399988B2

    公开(公告)日：2008-07-15

    申请号：US11581583

    申请日：2006-10-17

    申请人： Yusuke Matsukura

    发明人： Yusuke Matsukura

    IPC分类号： H01L29/06

    CPC分类号： H01L31/0352 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/035236 ,  H01L31/101 ,  Y10S977/774

    摘要： A photodetecting device which is capable of performing photodetection with a high sensitivity in a wide temperature range. A quantum dot structure including an embedding layer and quantum dots embedded by the embedding layer is formed. A quantum well structure including embedding layers and a quantum well layer whose band gap is smaller than those of the embedding layers is formed at a location downstream of the quantum dot structure in the direction of flow of electrons which flow perpendicularly to the quantum dot structure during operation of the photodetecting device. This reduces the temperature dependence of the potential barrier of a photodetecting section, which has to be overcome by electrons, whereby it is possible to lower the potential barrier of the embedding layers at high temperature.

    摘要翻译： 能够在宽温度范围内以高灵敏度进行光检测的光检测装置。 形成包括嵌入层和嵌入层嵌入的量子点的量子点结构。 包括嵌入层和量子阱层的量子阱结构，其带隙小于嵌入层的量子阱层，形成在量子点结构的下游位于垂直于量子点结构的电子流动方向的位置 光电检测装置的运行。 这就降低了必须由电子克服的光电检测部分的势垒的温度依赖性，从而可以降低埋入层在高温下的势垒。

    Photodetecting device and method of manufacturing the same
    10.
    发明申请
    Photodetecting device and method of manufacturing the same 有权
    光检测装置及其制造方法

    公开(公告)号：US20070262292A1

    公开(公告)日：2007-11-15

    申请号：US11581583

    申请日：2006-10-17

    申请人： Yusuke Matsukura

    发明人： Yusuke Matsukura

    IPC分类号： H01L29/06

    CPC分类号： H01L31/0352 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  H01L31/035236 ,  H01L31/101 ,  Y10S977/774

    摘要： A photodetecting device which is capable of performing photodetection with a high sensitivity in a wide temperature range. A quantum dot structure including an embedding layer and quantum dots embedded by the embedding layer is formed. A quantum well structure including embedding layers and a quantum well layer whose band gap is smaller than those of the embedding layers is formed at a location downstream of the quantum dot structure in the direction of flow of electrons which flow perpendicularly to the quantum dot structure during operation of the photodetecting device. This reduces the temperature dependence of the potential barrier of a photodetecting section, which has to be overcome by electrons, whereby it is possible to lower the potential barrier of the embedding layers at high temperature.

    摘要翻译： 能够在宽温度范围内以高灵敏度进行光检测的光检测装置。 形成包括嵌入层和嵌入层嵌入的量子点的量子点结构。 包括嵌入层和量子阱层的量子阱结构，其带隙小于嵌入层的量子阱层，形成在量子点结构的下游位于垂直于量子点结构的电子流动方向的位置 光电检测装置的运行。 这就降低了必须由电子克服的光电检测部分的势垒的温度依赖性，从而可以降低埋入层在高温下的势垒。