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    INFRARED PHOTODETECTOR
    3.
    发明申请
    INFRARED PHOTODETECTOR 有权
    红外光电转换器

    公开(公告)号：US20100032652A1

    公开(公告)日：2010-02-11

    申请号：US12534421

    申请日：2009-08-03

    申请人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

    发明人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

    IPC分类号： H01L31/101 ,  H01L31/0304

    CPC分类号： B82Y20/00 ,  B82Y30/00 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/101 ,  Y02E10/544

    摘要： An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.

    摘要翻译： 包括中间层的层结构的红外光电检测器和具有比中间层窄的带隙并且包括交替堆叠的多个量子点的量子点层，并且检测当将红外辐射施加到层结构时产生的光电流 从而检测红外辐射，所述红外光电检测器还包括设置在所述量子点层的一侧且具有比所述中间层更大的带隙的第一阻挡层; 以及设置在量子点层的另一侧上并且具有比中间层更大的带隙的第二阻挡层。

    Infrared photodetector
    4.
    发明授权
    Infrared photodetector 有权
    红外光电探测器

    公开(公告)号：US08373155B2

    公开(公告)日：2013-02-12

    申请号：US12534421

    申请日：2009-08-03

    申请人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

    发明人： Toshihiro Okamura ,  Mitsuhiro Nagashima ,  Michiya Kibe ,  Hironori Nishino ,  Yasuhito Uchiyama ,  Yusuke Matsukura

    IPC分类号： H01L31/09

    CPC分类号： B82Y20/00 ,  B82Y30/00 ,  H01L31/03046 ,  H01L31/0352 ,  H01L31/101 ,  Y02E10/544

    摘要： An infrared photodetector including a layer structure of an intermediate layer, and a quantum dot layer having a narrower band gap than the intermediate layer and including a plurality of quantum dots alternately stacked, and detecting photocurrent generated when infrared radiation is applied to the layer structure to thereby detect the infrared radiation, the infrared photodetector further including a first barrier layer provided on one side of the quantum dot layer and having a larger band gap than the intermediate layer; and a second barrier layer provided on the other side of the quantum dot layer and having a larger band gap than the intermediate layer.

    摘要翻译： 包括中间层的层结构的红外光电检测器和具有比中间层窄的带隙并且包括交替堆叠的多个量子点的量子点层，并且检测当将红外辐射施加到层结构时产生的光电流 从而检测红外辐射，所述红外光电检测器还包括设置在所述量子点层的一侧且具有比所述中间层更大的带隙的第一阻挡层; 以及设置在量子点层的另一侧上并且具有比中间层更大的带隙的第二阻挡层。

    VOX film, wherein X is greater than 1.875 and less than 2.0, and a bolometer-type infrared sensor comprising the VOX film
    6.
    发明授权
    VOX film, wherein X is greater than 1.875 and less than 2.0, and a bolometer-type infrared sensor comprising the VOX film 失效
    VOX膜，其中X大于1.875且小于2.0，以及包括VOX膜的测辐射热计型红外传感器

    公开(公告)号：US5801383A

    公开(公告)日：1998-09-01

    申请号：US754140

    申请日：1996-11-22

    申请人： Hideo Wada ,  Mitsuhiro Nagashima ,  Naoki Oda ,  Tokuhito Sasaki ,  Toru Mori

    发明人： Hideo Wada ,  Mitsuhiro Nagashima ,  Naoki Oda ,  Tokuhito Sasaki ,  Toru Mori

    IPC分类号： G01J5/20 ,  H01L25/00 ,  G01J5/00

    CPC分类号： G01J5/20

    摘要： At a heat treatment temperature in a reducing atmosphere of Ar and H.sub.2, a precursory film of V.sub.2 O.sub.5 is reduced into a VO.sub.x film with the heat treatment temperature selected in a predetermined temperature range between 350 .degree. C. and 450.degree. C., both exclusive, to control a resistivity of the VO.sub.x film, where x is greater than 1.875 and less than 2.0. The VO.sub.x film is not susceptible to a metal-semiconductor phase transition inevitable in VO.sub.2 at about 70.degree. C. and is excellent for use in a bolometer-type infrared sensor. When reduced at 350.degree. C. and 450.degree. C. the resistivity and its temperature coefficient of the VO.sub.x film at room temperature are 0.5 and 0.002 .OMEGA. cm and -2.2% and 0.2% per degree Celsius.

    摘要翻译： 在Ar和H2的还原气氛中的热处理温度下，将V 2 O 5的前体膜还原成VOx膜，其中热处理温度选择在350℃至450℃的预定温度范围内， 以控制VOx膜的电阻率，其中x大于1.875且小于2.0。 VOx膜不易受到在约70℃的VO2中不可避免的金属 - 半导体相变的影响，并且适用于测辐射热计型红外传感器。 当在350℃和450℃下还原时，VOx膜在室温下的电阻率及其温度系数分别为0.5和0.002欧米加厘​​米，-2.2％和0.2％摄氏度。