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34 条记录 (耗时 0.019 秒)

    Retractable broad-band antenna for portable telephones
    1.
    发明授权
    Retractable broad-band antenna for portable telephones 失效
    用于便携式电话的伸缩式宽带天线

    公开(公告)号：US5691730A

    公开(公告)日：1997-11-25

    申请号：US708789

    申请日：1996-09-09

    申请人： Yoshimi Egashira ,  Minoru Taguchi

    发明人： Yoshimi Egashira ,  Minoru Taguchi

    IPC分类号： H01Q21/30 ,  H01Q1/24 ,  H01Q5/10 ,  H01Q5/385 ,  H04B1/38 ,  H01Q1/36

    CPC分类号： H01Q1/244

    摘要： A retractable broad-band antenna for a portable telephone which includes a first antenna element which resonates in the lower region of the frequency band, a second antenna element which is coupled in series to the first antenna element via electrostatic capacitance and resonates in the higher region, and a call-receiving third antenna element mounted to the tip end of the second antenna element. The first and second antenna elements are shortened antenna elements in a form of helical coils. The first antenna element has an electrical length of .lambda.L/8 and is a non-grounded type having broad band characteristics by means of a matching device; and the second element has an electrical length of .lambda.H/2 wherein .lambda.H and .lambda.L are respectively the wave lengths at a center frequency of the higher and lower region of the frequency band used. The third antenna element preferably has a conductive contact so that the tip portion of the second antenna element, which stays outside of the telephone housing when the base portion of the second antenna element is retracted into the housing, can act as a call-receiving antenna element.

    摘要翻译： 一种用于便携式电话的可伸缩宽带天线，其包括在所述频带的下部区域中谐振的第一天线元件，经由静电电容串联耦合到所述第一天线元件的第二天线元件，并且在所述较高区域中共振 以及安装到第二天线元件的末端的呼叫接收第三天线元件。 第一和第二天线元件是螺旋线圈形式的缩短的天线元件。 第一天线元件具有λL / 8的电长度，并且是通过匹配装置具有宽带特性的非接地型; 并且第二元件具有λH / 2的电长度，其中λH和λL分别是所使用的频带的较高和较低区域的中心频率处的波长。 第三天线元件优选地具有导电接触，使得当第二天线元件的基部缩回到壳体中时，第二天线元件的尖端部分停留在电话外壳的外部，可以用作呼叫接收天线 元件。

    Adjusting method for an electronic part
    2.
    发明授权
    Adjusting method for an electronic part 失效
    电子零件的调整方法

    公开(公告)号：US5548537A

    公开(公告)日：1996-08-20

    申请号：US374124

    申请日：1995-01-18

    申请人： Minoru Taguchi

    发明人： Minoru Taguchi

    IPC分类号： H05K13/00 ,  H01F41/04 ,  G06G7/30 ,  G06G7/62

    CPC分类号： H01F41/045

    摘要： Output signals of an electronic part are sampled at regular intervals, and a function representing a relationship between the output signal and a changing quantity of a characteristic of the electronic part is calculated with an interpolation formula. A changing quantity for setting the output signal to a desired value is calculated with the calculated function, and electronic part is adjusted by the calculated changing quantity.

    摘要翻译： 以规则的间隔对电子部件的输出信号进行采样，并用内插公式计算表示输出信号与电子部件的特性的变化量之间的关系的函数。 通过计算出的功能计算出将输出信号设定为期望值的变化量，并通过计算出的变化量来调整电子部件。

    Method of making a semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors
    4.
    发明授权
    Method of making a semiconductor device having a charge transfer device, MOSFETs, and bipolar transistors 失效
    制造具有电荷转移装置，MOSFET和双极晶体管的半导体器件的方法

    公开(公告)号：US5260228A

    公开(公告)日：1993-11-09

    申请号：US977836

    申请日：1992-11-17

    申请人： Minoru Taguchi

    发明人： Minoru Taguchi

    IPC分类号： H01L27/06 ,  H01L27/105 ,  H01L21/70

    CPC分类号： H01L27/0623 ,  H01L27/1057

    摘要： A semiconductor device having a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on a major surface of the semiconductor substrate, an isolation layer of the first conductivity type formed in the epitaxial layer and extending from a surface thereof to the major surface of the semiconductor substrate. The isolation layer divides the epitaxial layer into first, second, and third islands. The device further has two wells of the first conductivity type, formed in the first and second islands, respectively, and extending to the substrate, a charge transfer device having a back gate formed of the first well, an insulated-gate FET of the first conductivity type, having a back gate formed of the second island, an insulated-gate FET of the second conductivity type, having a back gate formed of the second well, and a bipolar transistor having a collector formed of the third island. The first island surrounds the first well which serves as back gate of the charge transfer device, and thus blocks the noise generated in the first well. Hence, the other islands are free from the influence of the noise.

    摘要翻译： 一种半导体器件，具有第一导电类型的半导体衬底，形成在半导体衬底的主表面上的第二导电类型的外延层，形成在外延层中并从其表面延伸的第一导电类型的隔离层 到半导体衬底的主表面。 隔离层将外延层划分成第一岛，第二岛和第三岛。 该器件还具有分别形成在第一和第二岛中并且延伸到衬底的第一导电类型的两个阱，具有由第一阱形成的背栅的电荷转移器件，第一阱的绝缘栅FET 具有由第二岛形成的背栅的导电类型，具有由第二阱形成的背栅的第二导电类型的绝缘栅FET，以及具有由第三岛形成的集电极的双极晶体管。 第一岛围绕作为电荷转移装置的背栅的第一阱，从而阻止在第一阱中产生的噪声。 因此，其他岛屿没有噪音的影响。

    4,5-dihydronaphtho[1,2-b]thiophene derivative
    6.
    发明授权
    4,5-dihydronaphtho[1,2-b]thiophene derivative 失效
    4,5-二氢萘并[1,2-b]噻吩衍生物

    公开(公告)号：US07384974B2

    公开(公告)日：2008-06-10

    申请号：US10566572

    申请日：2004-07-30

    申请人： Minoru Taguchi ,  Ryo Suzuki ,  Ayako Mikami

    发明人： Minoru Taguchi ,  Ryo Suzuki ,  Ayako Mikami

    IPC分类号： A61K31/381 ,  C07D333/74 ,  C07D495/14

    CPC分类号： C07D333/74 ,  C07D319/18 ,  C07D495/04

    摘要： A 4,5-dihydronaphtho[1,2-b]thiophene derivative expressed by the formula: (wherein R1 is a C1 to C10 1-hydroxyalkyl group or a C1 to C10 acyl group, and R2 and R3 separately substitute in the 6-, 7-, 8-, or 9-positions, and are each independently a hydrogen atom, a halogen atom, a C1 to C10 alkyl group, a hydroxy group, a C1 to C10 alkoxy group, a C1 to C5 alkenyloxy group, a C1 to C5 alkynyloxy group, a benzyloxy group, or the like, provided that when R1 is an acyl group and R2 is a hydrogen atom, then R3 is neither a hydrogen atom nor an acetyl group), or a pharmaceutically acceptable salt thereof This is a novel compound that is effective in reducing triglyceride levels in the liver and reducing blood glucose levels.

    摘要翻译： 由下式表示的4,5-二氢萘并[1,2-b]噻吩衍生物（其中R 1是C 1至C 10 - SUB- 1-羟基烷基或C 1〜C 10酰基，R 2和R 3， 分别代替6-，7-，8-或9-位，并且各自独立地为氢原子，卤素原子，C 1至C 10 - 烷基，羟基，C 1〜C 10烷氧基，C 1〜C 5烷基，C 1〜 烯氧基，C 1〜C 5炔氧基，苄氧基等，条件是当R 1是酰基时， 和R 2是氢原子，则R 3不是氢原子也不是乙酰基）或其药学上可接受的盐这是有效的新化合物 在减少肝脏中的甘油三酯水平并降低血糖水平。

    Liquid crystal display and liquid crystal display driving method
    7.
    发明申请
    Liquid crystal display and liquid crystal display driving method 有权
    液晶显示及液晶显示驱动方式

    公开(公告)号：US20050195671A1

    公开(公告)日：2005-09-08

    申请号：US11070240

    申请日：2005-03-03

    申请人： Minoru Taguchi

    发明人： Minoru Taguchi

    IPC分类号： G02F1/133 ,  G09G3/20 ,  G09G3/36 ,  G11C7/00

    CPC分类号： G02F1/13306 ,  G02F1/1362 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2310/0251 ,  G09G2320/0233 ,  G09G2320/0252

    摘要： Data (gray scale levels of source driver output) of two lines are compared between an actually charged line and a pre-charged line for which actual charging and pre-charging are carried out, respectively, during the same horizontal period. Based on the result of comparison, a pre-charged period of the pre-charged line is adjusted by adjusting a pulse width of a gate driver output. In this way, the pre-charge period is reduced and thereby overcharge is avoided in pixels which are likely to be overcharged by the pre-charging.

    摘要翻译： 两个线路的数据（源驱动器输出的灰度级别）在相同的水平周期内分别在实际充电的线路和进行实际充电和预充电的预充电线路之间进行比较。 基于比较的结果，通过调节栅极驱动器输出的脉冲宽度来调节预充电线的预充电周期。 以这种方式，预充电周期减少，从而避免了通过预充电可能被过度充电的像素中的过充电。

    Semiconductor integrated circuit and method of making the same
    9.
    发明授权
    Semiconductor integrated circuit and method of making the same 失效
    半导体集成电路及其制作方法

    公开(公告)号：US5198880A

    公开(公告)日：1993-03-30

    申请号：US784605

    申请日：1991-10-28

    申请人： Minoru Taguchi ,  Hiroshi Mochizuki

    发明人： Minoru Taguchi ,  Hiroshi Mochizuki

    IPC分类号： H01L27/06 ,  H01L27/105

    CPC分类号： H01L27/1057 ,  H01L27/0623

    摘要： For providing a semiconductor integrated circuit device including CCD type, bipolar type and MOS type integrated circuits in only one chip, island-shaped epitaxial layers of opposite conductivity type are disposed in a semiconductor substrate of one conductivity type having a low impurity concentration. A field oxide layer is provided so as to surround a periphery of an exposed surface of each epitaxial layer. A buried layer of opposite conductivity type having a high impurity concentration is is interposed between the semiconductor substrate and each epitaxial layer in such a manner that at least one edge thereof terminates to the lower surfaace of the field oxide layer. The CCD type integrated circuit is provided in the semiconductor substrate, and the bipolar type and MOS type integrated circuits are arranged in the epitaxial layers.

    摘要翻译： 为了仅在一个芯片中提供包括CCD型，双极型和MOS型集成电路的半导体集成电路器件，具有相反导电类型的岛状外延层设置在具有低杂质浓度的一种导电类型的半导体衬底中。 提供场氧化物层以便围绕每个外延层的暴露表面的周边。 具有高杂质浓度的相反导电类型的掩埋层以这样的方式插入在半导体衬底和每个外延层之间，使得其至少一个边缘终止于场氧化物层的下表面。 CCD型集成电路设置在半导体衬底中，并且双极型和MOS型集成电路布置在外延层中。