摘要:
A write controller performs verification for checking whether each memory cell is on a predetermined verification level. For a memory cell to be written to a voltage level higher than the predetermined verification level, the write controller stores, in first and second latch circuits, the number of times of write to be performed by a write voltage after the verification. Whenever write is performed by the write voltage, the write controller updates the number of times of write stored in the first and second latch circuits. After write is performed the number of times of write by the write voltage, the write controller performs write by an intermediate voltage lower than the write voltage.
摘要:
A write controller performs verification for checking whether each memory cell is on a predetermined verification level. For a memory cell to be written to a voltage level higher than the predetermined verification level, the write controller stores, in first and second latch circuits, the number of times of write to be performed by a write voltage after the verification. Whenever write is performed by the write voltage, the write controller updates the number of times of write stored in the first and second latch circuits. After write is performed the number of times of write by the write voltage, the write controller performs write by an intermediate voltage lower than the write voltage.
摘要:
A memory cell array includes a plurality of memory cells in each of which a plurality of bits are stored. A sense amplifier detects data read from a memory cell selected from the memory cell array. At the time of a write verify operation for verifying write data, when a threshold voltage of the memory cell exceeds a predetermined checkpoint, the data control unit converts write data to be written to the memory cell into data of the number of times indicating the remaining number of write voltage application times, inverts only one bit of the data of the number of times each time a write voltage application operation is performed, and changes a definition of the data of the number of times to thereby perform a subtraction operation.
摘要:
A memory cell array includes a plurality of memory cells in each of which a plurality of bits are stored. A sense amplifier detects data read from a memory cell selected from the memory cell array. At the time of a write verify operation for verifying write data, when a threshold voltage of the memory cell exceeds a predetermined checkpoint, the data control unit converts write data to be written to the memory cell into data of the number of times indicating the remaining number of write voltage application times, inverts only one bit of the data of the number of times each time a write voltage application operation is performed, and changes a definition of the data of the number of times to thereby perform a subtraction operation.
摘要:
A voltage supply circuit that switches and outputs multiple set voltages from an output terminal, has a boosting circuit that boosts a voltage supplied from a power supply and outputs the voltage to the output terminal; a voltage detecting circuit that outputs a first flag signal when detecting that the voltage outputted from the boosting circuit is not lower than the set voltage, outputs a second flag when detecting that the voltage outputted from the boosting circuit is not lower than a frequency adjusting voltage set lower than the set voltage; and a control circuit that controls an operation of the boosting circuit in response to the set voltage and the output signal of the voltage detecting circuit.
摘要:
The disclosure concerns a power supply circuit comprising a voltage converter receiving an external voltage and outputting an internal voltage; a first switch and a second switch connected between an output of the voltage converter and a constant voltage source; a resistor provided between the first switch and the second switch, and dividing the internal voltage; a comparator including a first input unit, a second input, and an output which is connected to the voltage converter; a reference voltage source supplying a reference voltage to the first input; a feedback feeding back a voltage divided by the resistor to the second input from a node between the first switch and the second switch; a setting voltage source, to the second input; a third switch connected between the setting voltage source and the second input; and a control signal generator controlling the first switch, the second switch, and the third switch.
摘要:
A power supply circuit, comprises a booster circuit that boosts the voltage supplied from a power supply to produce an output voltage; a voltage divider circuit that divides said output voltage by resistive division and outputs a monitored voltage; a comparator circuit that compares said monitored voltage with a reference voltage and outputs a signal to activate said booster circuit if said monitored voltage is lower than said reference voltage and a signal to deactivate said booster circuit if said monitored voltage is higher than said reference voltage; an auxiliary instruction circuit that outputs an auxiliary signal to control the timing of the activation of said booster circuit; and an arithmetic circuit that performs a calculation using said auxiliary signal and the output signal of said comparator circuit and outputs an enable signal to activate said booster circuit if the output signal of said comparator circuit is a signal to activate said booster circuit, or said auxiliary signal is a signal to activate said booster circuit.
摘要:
A voltage supply circuit that switches and outputs multiple set voltages from an output terminal, has a boosting circuit that boosts a voltage supplied from a power supply and outputs the voltage to the output terminal; a voltage detecting circuit that outputs a first flag signal when detecting that the voltage outputted from the boosting circuit is not lower than the set voltage, outputs a second flag when detecting that the voltage outputted from the boosting circuit is not lower than a frequency adjusting voltage set lower than the set voltage; and a control circuit that controls an operation of the boosting circuit in response to the set voltage and the output signal of the voltage detecting circuit.
摘要:
A power supply circuit outputs different set potentials in response to control signals, wherein a voltage detecting circuit changes levels of a first reference potential and a second reference potential in response to inputs of control signals, and a clock generating circuit increases a frequency of the frequency divided clock signal when the levels of the first reference potential and the second reference potential are greatly changed in response to the inputs of the control signals.
摘要:
According to one embodiment, a semiconductor memory device includes a memory cell array including a plurality of memory cells, a random number generation circuit configured to generate a random number, and a controller configured to control the memory cell array and the random number generation circuit. The random number generation circuit includes a random number control circuit configured to generate a random number parameter based on data which is read out from the memory cell by a generated control parameter, and a pseudo-random number generation circuit configured to generate the random number by using the random number parameter as a seed value.