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1.发明申请公开(公告)号：US20090184409A1
公开(公告)日：2009-07-23
申请号：US12357895
申请日：2009-01-22
申请人： Mitsuaki KATAGIRI , Hisashi Tanie , Jun Kayamori , Dai Sasaki , Hiroshi Moriya
发明人： Mitsuaki KATAGIRI , Hisashi Tanie , Jun Kayamori , Dai Sasaki , Hiroshi Moriya
IPC分类号： H01L23/02 , H01L25/10 , H01L23/48 , H01L23/485
CPC分类号： H01L25/105 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/50 , H01L24/86 , H01L25/0657 , H01L2224/29101 , H01L2224/29191 , H01L2225/0652 , H01L2225/06555 , H01L2225/06579 , H01L2225/1023 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/15331 , H01L2924/30105 , H01L2924/3511 , H01L2924/00
摘要： In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.
摘要翻译： 在层叠型半导体器件中，堆叠第一半导体器件和至少一个第二半导体器件。 第一半导体器件包括布线板和安装在布线板上的第一半导体芯片。 第二半导体器件包括布线板和安装在布线板上的第二半导体芯片。 每个第二半导体器件的第二半导体芯片的厚度比第一半导体芯片的厚度厚。
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2.发明授权公开(公告)号：US08372693B2
公开(公告)日：2013-02-12
申请号：US13538654
申请日：2012-06-29
申请人： Mitsuaki Katagiri , Hisashi Tanie , Jun Kayamori , Dai Sasaki , Hiroshi Moriya
发明人： Mitsuaki Katagiri , Hisashi Tanie , Jun Kayamori , Dai Sasaki , Hiroshi Moriya
IPC分类号： H01L23/02 , H01L23/485 , H01L25/10
CPC分类号： H01L25/105 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/50 , H01L24/86 , H01L25/0657 , H01L2224/29101 , H01L2224/29191 , H01L2225/0652 , H01L2225/06555 , H01L2225/06579 , H01L2225/1023 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/15331 , H01L2924/30105 , H01L2924/3511 , H01L2924/00
摘要： In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.
摘要翻译： 在层叠型半导体器件中，堆叠第一半导体器件和至少一个第二半导体器件。 第一半导体器件包括布线板和安装在布线板上的第一半导体芯片。 第二半导体器件包括布线板和安装在布线板上的第二半导体芯片。 每个第二半导体器件的第二半导体芯片的厚度比第一半导体芯片的厚度厚。
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3.发明授权公开(公告)号：US08237251B2
公开(公告)日：2012-08-07
申请号：US12357895
申请日：2009-01-22
申请人： Mitsuaki Katagiri , Hisashi Tanie , Jun Kayamori , Dai Sasaki , Hiroshi Moriya
发明人： Mitsuaki Katagiri , Hisashi Tanie , Jun Kayamori , Dai Sasaki , Hiroshi Moriya
IPC分类号： H01L23/02 , H01L23/485 , H01L25/10
CPC分类号： H01L25/105 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/50 , H01L24/86 , H01L25/0657 , H01L2224/29101 , H01L2224/29191 , H01L2225/0652 , H01L2225/06555 , H01L2225/06579 , H01L2225/1023 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/15331 , H01L2924/30105 , H01L2924/3511 , H01L2924/00
摘要： In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.
摘要翻译： 在层叠型半导体器件中，堆叠第一半导体器件和至少一个第二半导体器件。 第一半导体器件包括布线板和安装在布线板上的第一半导体芯片。 第二半导体器件包括布线板和安装在布线板上的第二半导体芯片。 每个第二半导体器件的第二半导体芯片的厚度比第一半导体芯片的厚度厚。
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