公开(公告)号：US20240332272A1

公开(公告)日：2024-10-03

申请号：US18190885

申请日：2023-03-27

申请人： AMKOR TECHNOLOGY SINGAPORE HOLDING PTE. LTD.

发明人： Sang Yun MA ,  Dong Hee KANG

IPC分类号： H01L25/16 ,  H01L23/13 ,  H01L23/367 ,  H01L23/552

CPC分类号： H01L25/165 ,  H01L23/13 ,  H01L23/3675 ,  H01L23/552 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/16227 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/069 ,  H01L2924/0695 ,  H01L2924/07025 ,  H01L2924/0715

摘要： In one example, an electronic device includes a substrate with a substrate first side; a substrate second side opposite to the substrate first side, a substrate lateral side connecting the substrate first side to the substrate second side, a dielectric structure, and a conductive structure. A substrate dock includes a substrate dock base at the substrate first side and a first substrate dock sidewall extending upward from the substrate dock base. The substrate dock base and the first substrate dock sidewall define a substrate dock cavity. A cover structure includes a cover sidewall with a cover sidewall lower side. An interface material couples the cover sidewall to the substrate dock. An electronic component is coupled to the conductive structure. Other examples and related methods are also disclosed herein.

公开(公告)号：US20240096845A1

公开(公告)日：2024-03-21

申请号：US17934023

申请日：2022-09-21

申请人： QUALCOMM Incorporated

发明人： Yangyang Sun ,  Dongming He ,  Yujen Chen

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L25/065

CPC分类号： H01L24/73 ,  H01L21/563 ,  H01L23/3171 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/16148 ,  H01L2224/1712 ,  H01L2224/27416 ,  H01L2224/27614 ,  H01L2224/29191 ,  H01L2224/3201 ,  H01L2224/32145 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06527 ,  H01L2924/35121 ,  H01L2924/37001 ,  H01L2924/381 ,  H01L2924/3841

摘要： Circuit packages with a polymer layer around the bump interconnects have a reduced number of shorts between the bump interconnects and have reduced underfill delamination. The circuit package includes a first component coupled to a second component through a plurality of bump interconnects employed for passing logic signals, data signals, and/or power. The bump interconnects extend from a surface of the first component and are coupled to contact pads on an opposing surface of the second component. The side surfaces of the bump interconnects extend in a direction from the second component to the first. The circuit package includes the polymer layer disposed on the surface of the first component around the bump interconnects and on the side surfaces of the bump interconnects. The polymer layer reduces shorts between the side surfaces of adjacent bump interconnects and reduces delamination of an underfill disposed between the first and second components.

公开(公告)号：US20240087941A1

公开(公告)日：2024-03-14

申请号：US18268220

申请日：2021-12-14

申请人： DOW TORAY CO., LTD.

发明人： Nohno TODA ,  Eiji KITAURA ,  Manabu SUTOH

IPC分类号： H01L21/683 ,  B81C1/00 ,  B81C99/00 ,  C09J7/35 ,  C09J11/06 ,  C09J183/10 ,  H01L23/00

CPC分类号： H01L21/6836 ,  B81C1/00904 ,  B81C99/0025 ,  C09J7/35 ,  C09J11/06 ,  C09J183/10 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  B81C2203/032 ,  C09J2483/00 ,  H01L2221/68327 ,  H01L2224/27436 ,  H01L2224/29191 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/83191 ,  H01L2224/83862 ,  H01L2224/94 ,  H01L2924/0715

摘要： Provided is an integrated dicing die bonding sheet having excellent storage stability and stress relaxation properties, having no problems such as chip flying, chipping, cracking, and the like during a dicing process, and having excellent production efficiency; and a method of manufacturing a semiconductor device (particularly including a MEMS device) using the same. An integrated dicing die bonding sheet including a base film, and a silicone-based adhesive sheet having an adhesive surface adhered to the semiconductor wafer, wherein at a stage after dicing the semiconductor wafer and prior to heating, the base film can be interfacially peeled from the silicone-based adhesive sheet, and after the adhesive surface is heated within a range of 50 to 200° C., a peeling mode of the adhesive surface from another non-pressure-sensitive adhesive base material changes to cohesive failure, exhibiting permanent adhesion.

公开(公告)号：US11810882B2

公开(公告)日：2023-11-07

申请号：US17684292

申请日：2022-03-01

申请人： Micron Technology, Inc.

发明人： Wei Zhou

IPC分类号： H01L23/00

CPC分类号： H01L24/16 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/81 ,  H01L24/83 ,  H01L24/91 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0518 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05176 ,  H01L2224/05178 ,  H01L2224/05181 ,  H01L2224/05183 ,  H01L2224/05184 ,  H01L2224/05541 ,  H01L2224/11826 ,  H01L2224/11827 ,  H01L2224/11845 ,  H01L2224/11849 ,  H01L2224/13009 ,  H01L2224/1318 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13183 ,  H01L2224/13184 ,  H01L2224/13565 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32145 ,  H01L2224/73103 ,  H01L2224/8185 ,  H01L2224/81815 ,  H01L2924/0635 ,  H01L2924/0665 ,  H01L2924/07025

摘要： A semiconductor device assembly, comprising a first semiconductor device including a first substrate with a frontside surface, a plurality of solder bumps located on the frontside surface of the first substrate, and a first polymer layer on the frontside surface. The semiconductor device assembly also comprises a second semiconductor device including a second substrate with a backside surface, a plurality of TSVs protruding from the backside surface of the second substrate, and a second polymer layer on the backside surface of the first substrate, the second polymer layer having a plurality of openings corresponding to the plurality of TSVs. The first and second semiconductor devices are bonded such that the first polymer layer contacts the second polymer layer and each of the plurality of solder bumps extends into a corresponding one of the plurality of openings and contacts a corresponding one of the plurality of TSVs.

公开(公告)号：US20230352458A1

公开(公告)日：2023-11-02

申请号：US18299168

申请日：2023-04-12

申请人： NICHIA CORPORATION

发明人： Tetsuya ISHIKAWA ,  Yuta OKA

IPC分类号： H01L25/075 ,  H01L33/60 ,  H01L23/00

CPC分类号： H01L25/0753 ,  H01L24/29 ,  H01L24/32 ,  H01L33/60 ,  H01L2224/29017 ,  H01L2224/29191 ,  H01L2224/32059 ,  H01L2224/32225

摘要： A light-emitting device includes: a light source including: a first light source part including one or more first light-emitting elements, and a second light source part located outward of the first light source part so as to surround the first light source part in a top view, the second light source part including a plurality of second light-emitting elements; one or more first light-transmitting layers located above the first light source part; one or more second light-transmitting layers located above the second light source part; and a light-reflective member located between the plurality of second light-emitting elements. A first of the one or more second light-transmitting layers overlaps adjacent second light-emitting elements among the plurality of second light-emitting elements and the light-reflective member disposed between the adjacent second light-emitting elements in a top view.

公开(公告)号：US11776928B2

公开(公告)日：2023-10-03

申请号：US17694363

申请日：2022-03-14

申请人： Laird Technologies, Inc.

发明人： Vijayaraghavan Rajagopal ,  Eugene Anthony Pruss ,  Richard F. Hill

IPC分类号： H01L23/00 ,  F28F13/00 ,  H01L23/433 ,  H01L23/373 ,  C08J9/12

CPC分类号： H01L24/29 ,  F28F13/003 ,  H01L23/4334 ,  H01L24/27 ,  H01L24/83 ,  C08J9/122 ,  H01L23/3731 ,  H01L23/3736 ,  H01L23/3737 ,  H01L2224/29005 ,  H01L2224/29187 ,  H01L2224/29191 ,  H01L2224/29195 ,  H01L2224/29387 ,  H01L2224/29391 ,  H01L2924/3025

摘要： Disclosed are exemplary embodiments of compressible foamed thermal interface materials. Also disclosed are methods of making and using compressible foamed thermal interface materials.

公开(公告)号：US20230275057A1

公开(公告)日：2023-08-31

申请号：US18043690

申请日：2021-09-08

申请人： MITSUI CHEMICALS, INC.

发明人： Yuzo NAKAMURA ,  Yasuhisa KAYABA ,  Jun KAMADA

IPC分类号： H01L23/00 ,  C08L83/06 ,  C08J3/24

CPC分类号： H01L24/29 ,  C08L83/06 ,  C08J3/247 ,  H01L24/27 ,  H01L24/32 ,  C08L2203/16 ,  C08J2383/06 ,  H01L2224/27515 ,  H01L2224/29191 ,  H01L2924/3511 ,  H01L2924/35121 ,  H01L2224/32145 ,  H01L2924/3641

摘要： A composition includes: a compound (A), having an Si—O bond and a cationic functional group that includes at least one selected from the group consisting of a primary nitrogen atom and a secondary nitrogen atom; a compound (B), having at least three —C(═O)OX groups, wherein X is a hydrogen atom or an alkyl group with a carbon number of from 1 to 6, and from one to six of the —C(═O)OX groups is a —C(═O)OH group; and a compound (C), having a cyclic structure and at least one primary nitrogen atom that is directly bonded to the cyclic structure, the composition having a percentage of the primary and the secondary nitrogen atoms in the compound (A), with respect to a total amount of the primary and the secondary nitrogen atoms in the compound (A) and the primary nitrogen atom in the compound (C), of from 3 mol % to 95 mol %.

公开(公告)号：US10020236B2

公开(公告)日：2018-07-10

申请号：US14212985

申请日：2014-03-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tsung-Ding Wang ,  An-Jhih Su ,  Chien Ling Hwang ,  Jung Wei Cheng ,  Hsin-Yu Pan ,  Chen-Hua Yu

IPC分类号： H01L23/34 ,  H01L23/04 ,  H01L23/42 ,  H01L23/367 ,  H01L23/10 ,  H01L21/56 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L23/04 ,  H01L21/563 ,  H01L23/10 ,  H01L23/3675 ,  H01L23/42 ,  H01L23/49816 ,  H01L24/02 ,  H01L24/05 ,  H01L24/11 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/023 ,  H01L2224/04026 ,  H01L2224/11616 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/26145 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27462 ,  H01L2224/27602 ,  H01L2224/27616 ,  H01L2224/27622 ,  H01L2224/29011 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29147 ,  H01L2224/29166 ,  H01L2224/29181 ,  H01L2224/29187 ,  H01L2224/29191 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/29309 ,  H01L2224/29387 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/33505 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83007 ,  H01L2224/83104 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83815 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06589 ,  H01L2924/1434 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/163 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/05032 ,  H01L2924/00012 ,  H01L2924/01014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442

摘要： An apparatus comprising a first substrate, a dam structure disposed on a first side of the first substrate, and an integrated circuit (IC) memory chip coupled to the first side of the first substrate by a plurality of first conductive members. A second substrate is coupled to a second side of the first substrate by a plurality of second conductive members. A lid coupled to the second substrate encloses the IC memory chip and the first substrate. A thermal interface material (TIM) is coupled between the lid and the dam structure.

公开(公告)号：US20180148584A1

公开(公告)日：2018-05-31

申请号：US15499376

申请日：2017-04-27

申请人： SAMSUNG ELECTRONICS CO., LTD. ,  FOUNDATION OF SOONGSIL UNIVERSITY-INDUSTRY COOPERATION

发明人： Kunmo CHU ,  Byonggwon SONG ,  Sunghoon PARK ,  Kiyeon YANG ,  Changseung LEE

IPC分类号： C09D5/24 ,  C09D7/12 ,  C09D183/04 ,  H01L23/00

CPC分类号： C09D5/24 ,  C08K3/041 ,  C08K3/08 ,  C08K3/10 ,  C08K2201/001 ,  C08K2201/003 ,  C08K2201/011 ,  C09D7/61 ,  C09D7/69 ,  C09D7/70 ,  C09D11/52 ,  C09D183/04 ,  H01B1/22 ,  H01B1/24 ,  H01L21/4867 ,  H01L23/49883 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/27515 ,  H01L2224/29105 ,  H01L2224/29191 ,  H01L2224/29193 ,  H01L2224/3003 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/15159 ,  H01R13/2414 ,  H05K1/028 ,  H05K1/095 ,  H05K1/189 ,  H05K2201/026 ,  H05K2201/0323 ,  H05K2203/128 ,  H01L2924/014 ,  H01L2224/45099

摘要： Provided are a paste material, a method of forming the paste material, a wiring member formed from the paste material, and an electronic device including the wiring member. The paste material may include a plurality of liquid metal particles and a polymer binder. The paste material may further include a plurality of nanofillers. At least some of the plurality of nanofillers may each have an aspect ratio equal to or greater than about 3. A content of the plurality of liquid metal particles may be greater than a content of the polymer binder and may be greater than a content of the plurality of nanofillers. The wiring member may be formed by using the paste material, and the wiring member may be used in various electronic devices.

公开(公告)号：US20180090362A1

公开(公告)日：2018-03-29

申请号：US15276357

申请日：2016-09-26

申请人： Dow Corning Corporation

发明人： Peng-Fei FU ,  Sheng WANG

IPC分类号： H01L21/683 ,  C09J183/08 ,  B32B37/12 ,  H01L23/00 ,  H01L21/304 ,  H01L21/768

CPC分类号： H01L21/6836 ,  B32B37/12 ,  B32B43/006 ,  B32B2037/1253 ,  B32B2307/20 ,  B32B2383/00 ,  B32B2457/14 ,  C08G77/12 ,  C08G77/20 ,  C08G77/24 ,  C09J183/04 ,  H01L21/304 ,  H01L21/6835 ,  H01L21/76898 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2221/68386 ,  H01L2224/29191 ,  H01L2224/83855 ,  H01L2924/0715 ,  H01L2924/07802 ,  H01L2924/0782 ,  C08K5/56 ,  C08L83/00

摘要： Fluoro-containing silicone-based storage stable temporary bonding adhesive compositions are disclosed. The adhesive compositions can be used in varied applications including, but not limited to, 3D chip integration, packaging applications, semiconductor devices, radio-frequency identification tags, chip cards, high-density memory devices, and microelectronic devices. The adhesive compositions generally comprise: a) a fluoro-containing silicone having the general formula (I); M′[DoDfpDxq]nM′ wherein M′ is a vinyl or hydrogen functionalized unit; Df unit comprises a fluoro-substituted group; Dx unit comprises a vinyl or SiH functionalized group; 1>o≧0, 1>p>0, and 1>q≧0 wherein o+p+q=1 and p is equal to or less than 20% mole percent of the sum of o+p+q; and n is an integer from 1 to 1000; b) an alkenyl functional polydimethylsiloxane fluid; c) an alkenyl functional MQ siloxane resin; d) an SiH functional siloxane crosslinker; and e) a hydrosilylation catalyst.