公开(公告)号：US11094664B2

公开(公告)日：2021-08-17

申请号：US16746042

申请日：2020-01-17

Applicant: MITSUBISHI ELECTRIC CORPORATION

Inventor： Hiroaki Tatsumi ,  Sho Kumada ,  Osamu Suzuki ,  Daisuke Kawabata

IPC: H01L21/50 ,  H01L23/00 ,  H01L23/488 ,  H01L23/373 ,  H01L23/12 ,  H01L23/498 ,  H01L25/07 ,  H01L29/16 ,  H01L29/20 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

Abstract: A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.

公开(公告)号：US10573617B2

公开(公告)日：2020-02-25

申请号：US15740873

申请日：2016-06-28

Applicant: MITSUBISHI ELECTRIC CORPORATION

Inventor： Hiroaki Tatsumi ,  Sho Kumada ,  Osamu Suzuki ,  Daisuke Kawabata

IPC: H01L21/50 ,  H01L23/00 ,  H01L23/488 ,  H01L23/373 ,  H01L23/12 ,  H01L23/498 ,  H01L25/07 ,  H01L29/16 ,  H01L29/20 ,  H01L29/739 ,  H01L29/78 ,  H01L29/861

Abstract: A semiconductor device includes an electrode having a flat part and a non-flat part made up of a concave part, a joint layer being made of a sintered body of metal crystal grains provided on the flat part and the non-flat part of the electrode, and a semiconductor element being joined to the electrode with the joint layer therebetween, wherein the joint layer has a first region sandwiched between the non-flat part and the semiconductor element and a second region sandwiched between the flat part and the semiconductor element, and either one of the first region and the second region having a larger film thickness has a filling rate of the metal crystal grains smaller than the other one of the first region and the second region having a smaller film thickness. The present invention enhances reliability of a joint layer made of a sintered body of metal crystal grains.

公开(公告)号：US12205867B2

公开(公告)日：2025-01-21

申请号：US17626500

申请日：2019-09-04

Applicant: Mitsubishi Electric Corporation

Inventor： Koji Kise ,  Yumi Genda ,  Hiroaki Tatsumi ,  Daisuke Morita

IPC: H01L23/46 ,  H01L23/473

Abstract: A heat sink having a coolant flow path formed inside through which a coolant flows includes: a heat transfer plate having a first surface on which a semiconductor device is disposed and a second surface; a junction flow path-forming plate having a third surface and a fourth surface; a first partition wall provided in contact with the second surface and the third surface; and first fins provided in contact with the second surface. The coolant flow path includes a first flow path. A plurality of first divided regions separated by the at least one first partition wall are formed in the first flow path. The plurality of first fins are arranged by being spaced side by side in the first divided regions.