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    Semiconductor package and method for producing heat-radiating substrate for it
    2.
    发明授权
    Semiconductor package and method for producing heat-radiating substrate for it 有权
    半导体封装及其制造用散热基板的方法

    公开(公告)号：US06926861B2

    公开(公告)日：2005-08-09

    申请号：US10671712

    申请日：2003-09-29

    申请人： Norio Hirayama ,  Mitsuo Osada ,  Akira Ichida ,  Yoshinari Amano ,  Kiyoshi Asai ,  Hidetoshi Maesato ,  Tadashi Arikawa ,  Kenji Sakimae

    发明人： Norio Hirayama ,  Mitsuo Osada ,  Akira Ichida ,  Yoshinari Amano ,  Kiyoshi Asai ,  Hidetoshi Maesato ,  Tadashi Arikawa ,  Kenji Sakimae

    IPC分类号： B21B3/00 ,  B22F3/02 ,  B22F3/04 ,  B22F3/26 ,  C04B37/02 ,  H01L21/48 ,  H01L23/02 ,  H01L23/06 ,  H01L23/08 ,  H01L23/373 ,  B22F3/14

    CPC分类号： B22F3/045 ,  B22F3/02 ,  B22F2998/10 ,  H01L21/4871 ,  H01L21/4878 ,  H01L23/3733 ,  H01L2924/0002 ,  B22F3/26 ,  H01L2924/00

    摘要： A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate. In the isostatic molding process, at least two or more plates 27, 29, 31, 33, 35 and 37 are disposed adjacent to the inner surface of a side wall as divided into at least two portions, Mo powder is filled into the space as formed by those plates 27, 29, 31, 33, 35 and 37 with covering the Mo powder compact with a flexible cover, such as a rubber medium 39 or the like, to prepare a composite, then the resulting composite is put into a pressure tank, an external isostatic pressure is applied thereto against the flexible cover, and the plates are slid via the cover along the side wall thereby compressing the composite between the thus-slid plates into an Mo green compact.

    摘要翻译： 用半导体芯片安装的封装具有厚度小于0.4mm的Cu-Mo复合材料的散热基板，其通过将铜（Cu）熔体的30〜40质量％浸渍成为 钼。 散热基板是通过等静压成型制成Mo压坯，在Mo生坯上安装Cu加热，将铜浸渍到Mo生坯中得到Cu-Mo复合体，将Cu-Mo 复合成片状基材。 在等静压成型工艺中，至少两个或更多个板27,29,31,33,35和37与侧壁的内表面相邻设置，分为至少两部分，Mo粉末被填充到空间中 由这些板27,29,31,33,35和37形成，并用柔性覆盖物（例如橡胶介质39等）覆盖Mo粉末压块以制备复合材料，然后将所得复合材料压入 在其上施加有外部等静压力抵靠柔性盖，并且板沿着侧壁通过盖板滑动，从而将由此滑动的板之间的复合材料压缩成Mo压坯。

    Semiconductor package and method for producing heat-radiating substrate for it
    3.
    发明授权
    Semiconductor package and method for producing heat-radiating substrate for it 有权
    半导体封装及其制造用散热基板的方法

    公开(公告)号：US06693353B1

    公开(公告)日：2004-02-17

    申请号：US09252880

    申请日：1999-02-18

    申请人： Norio Hirayama ,  Mitsuo Osada ,  Akira Ichida ,  Yoshinari Amano ,  Kiyoshi Asai ,  Hidetoshi Maesato ,  Tadashi Arikawa ,  Kenji Sakimae

    发明人： Norio Hirayama ,  Mitsuo Osada ,  Akira Ichida ,  Yoshinari Amano ,  Kiyoshi Asai ,  Hidetoshi Maesato ,  Tadashi Arikawa ,  Kenji Sakimae

    IPC分类号： H01L2348

    CPC分类号： B22F3/045 ,  B22F3/02 ,  B22F2998/10 ,  H01L21/4871 ,  H01L21/4878 ,  H01L23/3733 ,  H01L2924/0002 ,  B22F3/26 ,  H01L2924/00

    摘要： A package to be mounted with semiconductor chips has a heat-radiating substrate having a thickness of smaller than 0.4 mm of a Cu—Mo composite as prepared by impregnating from 30 to 40% by mass of copper (Cu) melt into a green compact of molybdenum. The heat-radiating substrate is produced by preparing an Mo green compact through isostatic molding, mounting Cu on the Mo green compact, heating it to thereby impregnate copper into the Mo green compact to give a Cu—Mo composite, and rolling the Cu—Mo composite into a sheet substrate. In the isostatic molding process, at least two or more plates. 27, 29, 31, 33, 35 and 37 are disposed adjacent to the inner surface of a side wall as divided into at least two portions, Mo powder is filled into the space as formed by those plates 27, 29, 31, 33, 35 and 37 with covering the Mo powder compact with a flexible cover, such as a rubber medium 39 or the like, to prepare a composite, then the resulting composite is put into a pressure tank, an external isostatic pressure is applied thereto against the flexible cover, and the plates are slid via the cover along the side wall thereby compressing the composite between the thus-slid plates into an Mo green compact.

    摘要翻译： 用半导体芯片安装的封装具有厚度小于0.4mm的Cu-Mo复合材料的散热基板，其通过将铜（Cu）熔体的30〜40质量％浸渍成为 钼。 散热基板是通过等静压成型制成Mo压坯，在Mo生坯上安装Cu加热，将铜浸渍到Mo生坯中得到Cu-Mo复合体，将Cu-Mo 复合成片状基材。 在等静压成型工艺中，至少有两个以上的板。 27,29,31,33,35,37与侧壁的内表面相邻设置，分为至少两部分，Mo粉末被填充到由这些板27,29,31,33,33形成的空间中， 35和37，用橡胶介质39等柔性盖覆盖Mo粉末压块以制备复合材料，然后将所得的复合材料放入压力罐中，对其施加外部等静压 盖板，并且板沿着侧壁通过盖板滑动，从而将由此滑动的板材之间的复合材料压缩成Mo压坯。

    Plastic-packaged semiconductor device having a heat sink matched with a plastic package
    5.
    发明授权
    Plastic-packaged semiconductor device having a heat sink matched with a plastic package 失效
    具有与塑料封装相匹配的散热器的塑料封装半导体器件

    公开(公告)号：US5493153A

    公开(公告)日：1996-02-20

    申请号：US157295

    申请日：1993-11-26

    申请人： Tadashi Arikawa ,  Mitsuru Tsuchiya ,  Akira Ichida ,  Tadashi Igarashi

    发明人： Tadashi Arikawa ,  Mitsuru Tsuchiya ,  Akira Ichida ,  Tadashi Igarashi

    IPC分类号： H01L23/373 ,  H01L23/433 ,  H01L23/34 ,  H01L23/28 ,  H05K7/20

    CPC分类号： H01L23/3733 ,  H01L23/4334 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/181

    摘要： In a plastic-packaged semiconductor device molded by a synthetic resin, a heat sink is formed by a sheet which has a thermal expansion coefficient between 9.0.times.10.sup.-6 /K and 23.times.10.sup.-6 /K and a thermal conductivity greater than 200 W/m.multidot.K, which are selected in relation to those of the synthetic resin. The sheet is manufactured by mixing a first metal of a high melting point with a second metal of a low melting point lower than the first metal and by pressing and sintering the mixture. The first and the second metal may be molybdenum and copper, respectively. Alternatively, the sheet may be a composite sheet composed of a molybdenum mesh interposed between a pair of aluminum layers or a stacked sheet composed of a sintered layer of a mixture of molybdenum and copper and a coated layer of either molybdenum or copper.

    摘要翻译： 在由合成树脂模制的塑料封装半导体器件中，散热器由热膨胀系数为9.0×10 -6 / K至23×10 -6 / K，热导率大于200W / m×K的片形成 ，其相对于合成树脂的那些选择。 通过将高熔点的第一金属与低于第一金属的低熔点的第二金属混合并通过压制和烧结混合物来制造片。 第一和第二金属可以分别是钼和铜。 或者，片材可以是由插入在一对铝层之间的钼网或由钼和铜的混合物的烧结层构成的堆叠片和钼或铜的涂层组成的复合片。

    Plasma facing components of nuclear fusion reactors employing tungsten materials
    7.
    发明授权
    Plasma facing components of nuclear fusion reactors employing tungsten materials 失效
    使用钨材料的核聚变反应堆的等离子体面对部件

    公开(公告)号：US06261648B1

    公开(公告)日：2001-07-17

    申请号：US08388819

    申请日：1995-02-15

    申请人： Masato Akiba ,  Kazuyuki Nakamura ,  Akira Ichida ,  Takehiko Hayashi

    发明人： Masato Akiba ,  Kazuyuki Nakamura ,  Akira Ichida ,  Takehiko Hayashi

    IPC分类号： C23C800

    CPC分类号： G21B1/13 ,  C23C16/08 ,  C23C16/4402 ,  Y02E30/128

    摘要： In a plasma facing member exposed to a plasma beam of nuclear fusion reactors or the like, such as an electron beam, a tungsten layer is formed by the use of a CVD method and has a thickness of 500 micron meters or more. The tungsten layer may be overlaid on a substrate of molybdenum or tungsten and comprises included gases reduced to 2 ppm or less and impurities reduced to 2 ppm or less. The tungsten layer is specified by either a fine equi-axed grain structure or a columnar grain structure. Alternatively, the material of the substrate may be, for example, Cu alloy, stainless steel, Nb alloy, or V alloy.

    摘要翻译： 在暴露于诸如电子束等核聚变反应器等的等离子体束的等离子体对置构件中，通过使用CVD法形成钨层，其厚度为500微米以上。 钨层可以覆盖在钼或钨的衬底上，并且包括减少到2ppm或更少的包含的气体和降低到2ppm或更少的杂质。 钨层由细等轴晶粒结构或柱状晶粒结构规定。 或者，基板的材料可以是例如Cu合金，不锈钢，Nb合金或V合金。

    Semiconductor package using micro balls and production method thereof
    8.
    发明授权
    Semiconductor package using micro balls and production method thereof 有权
    使用微球的半导体封装及其制造方法

    公开(公告)号：US06518667B1

    公开(公告)日：2003-02-11

    申请号：US09697158

    申请日：2000-10-27

    申请人： Akira Ichida ,  Hiroshi Yoshida ,  Masahiko Mizukami ,  Yoshihiko Doi

    发明人： Akira Ichida ,  Hiroshi Yoshida ,  Masahiko Mizukami ,  Yoshihiko Doi

    IPC分类号： H01L2348

    CPC分类号： H05K3/3436 ,  H01L23/49816 ,  H01L2224/16 ,  H01L2224/73204 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/15311 ,  H05K2201/10234 ,  Y02P70/613 ,  H01L2924/00

    摘要： In a package of a semiconductor device mounted a semiconductor element and micro balls as electric contact points, the micro balls are composed of composite micro balls each of which has a core ball and an electrically conductive film around the core ball. The core balls have a sufficient rolling property with the diameter ranged from 30 to 100 &mgr;m. The diameter accuracy thereof is excellent. The electrically conductive film is formed by a solder plated layer which has a thickness of at least 10 &mgr;m uniformly formed on the outer surfaces. The composite micro balls are mounted onto a substrate. The dimensional accuracy of the Z axis of the package can be precisely controlled. Accordingly, the composite micro balls with the solder plated film has a thickness of at least 20 &mgr;m on the outer circumference of each core ball. The production method thereof, and the semiconductor package mounted a semiconductor element using the composite micro balls can be provided.

    摘要翻译： 在将半导体元件和微球作为电接触点安装的半导体器件的封装中，微球由复合微球组成，每个复合微球具有芯球和围绕芯球的导电膜。 芯球具有足够的滚动性能，直径范围为30至100μm。 其直径精度优异。 导电膜由均匀地形成在外表面上的至少10μm的厚度的焊料镀层形成。 复合微球安装在基板上。 可以精确地控制包装Z轴的尺寸精度。 因此，具有焊料镀膜的复合微球在每个芯球的外圆周上具有至少20μm的厚度。 可以提供其制造方法以及使用复合微球安装的半导体元件的半导体封装。