利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

7 条记录 (耗时 0.029 秒)

    Suspension support structure
    6.
    发明授权
    Suspension support structure 失效
    悬架支撑结构

    公开(公告)号：US06929272B2

    公开(公告)日：2005-08-16

    申请号：US10320424

    申请日：2002-12-17

    申请人： Mitsutaka Matsumoto ,  Susumu Kawahata

    发明人： Mitsutaka Matsumoto ,  Susumu Kawahata

    IPC分类号： B60G7/00 ,  B62D21/00 ,  B62D21/11 ,  B62D25/20

    CPC分类号： B62D21/11 ,  B60G2200/142 ,  B60G2200/144 ,  B60G2204/15 ,  B60G2204/43 ,  B60G2206/604 ,  B60G2206/605

    摘要： A suspension support structure has left and right suspension arms which are joined to and supported by a first cross member disposed so as to extend along the vehicle width direction and a second cross member disposed so as to extend along the vehicle width direction in the rear of the first cross member. The first cross member has a first intermediate part, and two first end parts which extend forward at an inclination to the vehicle body from the both ends of the first intermediate part and are supported at the vehicle body side. The second cross member has a second intermediate part, and two second end parts which extend rearward at an inclination to the vehicle body from the both ends of the second intermediate part and are supported at the vehicle body side.

    摘要翻译： 悬架支撑结构具有左右悬架臂，该悬架臂和右悬架臂被连接并由沿着车宽方向延伸设置的第一横向构件支撑，并且第二横向构件设置成沿着车辆宽度方向在后方延伸 第一个横梁。 第一横向构件具有第一中间部分和从第一中间部分的两端以倾斜向前延伸到车身的两个第一端部，并且被支撑在车身侧。 第二横向构件具有第二中间部分，以及两个第二端部，其从第二中间部分的两端以相对于车体的倾斜向后延伸并且被支撑在车身侧。

    Method for selectively forming crystalline silicon layer regions above gate electrodes
    7.
    发明授权
    Method for selectively forming crystalline silicon layer regions above gate electrodes 有权
    选择性地形成栅电极之上的晶体硅层区的方法

    公开(公告)号：US08530900B2

    公开(公告)日：2013-09-10

    申请号：US13495387

    申请日：2012-06-13

    申请人： Mitsutaka Matsumoto ,  Yuta Sugawara

    发明人： Mitsutaka Matsumoto ,  Yuta Sugawara

    IPC分类号： H01L21/8234 ,  H01L27/088

    CPC分类号： H01L21/02532 ,  H01L21/02675 ,  H01L27/1281 ,  H01L27/1285

    摘要： Preparing a substrate; forming a plurality of gate electrodes above the substrate; forming a gate insulating layer above the gate electrodes; forming an amorphous silicon layer above the gate insulating layer; forming crystalline silicon layer regions by irradiating the amorphous silicon layer in regions above the gate electrodes with a laser beam having a wavelength from 473 nm to 561 nm so as to crystallize the amorphous silicon layer in the regions above the gate electrodes, and forming an amorphous silicon layer region in a region other than the regions above the gate electrodes; and forming source electrodes and drain electrodes above the crystalline silicon layer regions are included, and a thickness of the gate insulating layer and a thickness of the amorphous silicon layer satisfy predetermined expressions.

    摘要翻译： 制备底物; 在所述衬底上形成多个栅电极; 在栅电极上方形成栅极绝缘层; 在所述栅绝缘层上方形成非晶硅层; 通过用波长从473nm到561nm的激光束照射栅电极上方的区域中的非晶硅层，以便在栅电极上方的区域中的非晶硅层结晶，形成晶体硅层区域， 在除栅电极上方的区域以外的区域中的硅层区域; 并且包括在晶体硅层区域上方形成源电极和漏电极，并且栅极绝缘层的厚度和非晶硅层的厚度满足预定的表达式。