Memory device using movement of protons
    10.
    发明授权
    Memory device using movement of protons 有权
    存储器件使用质子运动

    公开(公告)号:US6140157A

    公开(公告)日:2000-10-31

    申请号:US129588

    申请日:1998-08-05

    摘要: An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

    摘要翻译: 一种电子写入的存储元件,其利用在由两侧上的层围绕的电介质层内的质子的运动,以将质子限制在电介质层内,电极装置连接到周围层,以改变电介质层内质子的空间位置。 该装置优选构造为硅 - 二氧化硅 - 硅层状结构,其中在包含氢气的气氛中的高温退火期间,质子通过二氧化硅层的暴露边缘横向引入该结构。 该器件以低功率工作,优选是非易失性的,具有耐辐射性,并且与常规硅MOS处理兼容,用于与同一硅衬底上的其它微电子元件集成。 通过添加光学活性层,存储元件变成电学写入的光学读取光学存储元件。