公开(公告)号：US06844229B2

公开(公告)日：2005-01-18

申请号：US09999150

申请日：2001-10-31

申请人： Moon-hee Lee ,  Woo-gwan Shim ,  Hyung-ho Ko ,  Jong-ho Chung

发明人： Moon-hee Lee ,  Woo-gwan Shim ,  Hyung-ho Ko ,  Jong-ho Chung

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/10855

摘要： A method of manufacturing a semiconductor device having a storage electrode of a capacitor is provided. The method includes the steps of: forming a contact hole perforating through an interlayer dielectric layer on a semiconductor substrate; forming a conductive plug to fill the contact hole and expose the surface of the interlayer dielectric layer; forming molds on the interlayer dielectric layer to expose the surface of the conductive plug; recessing the upper surface of the conductive plug to expose a portion of the sidewalls of the interlayer dielectric layer; forming an electrode layer to cover the recessed conductive plug, and the sidewalls of the interlayer dielectric layer and the molds; and removing upper surfaces of the electrode layer to make a storage electrode until molds are exposed. The method further includes the steps of: forming a conductive pad electrically connected to the semiconductor substrate and a lower insulating layer surrounding the conductive pad; and forming bit line stacks on the lower insulating layer, wherein the interlayer dielectric layer covers the bit line stacks, and the contact hole between the bit line stacks exposes the conductive pad.

摘要翻译： 提供一种制造具有电容器的存储电极的半导体器件的方法。 该方法包括以下步骤：形成穿过半导体衬底上的层间电介质层的接触孔; 形成导电插塞以填充接触孔并暴露层间电介质层的表面; 在所述层间电介质层上形成模具以暴露所述导电插塞的表面; 使导电插塞的上表面凹陷以暴露层间电介质层的侧壁的一部分; 形成电极层以覆盖凹入的导电插塞，以及层间绝缘层的侧壁和模具; 并且除去电极层的上表面以形成存储电极，直到模具露出。 该方法还包括以下步骤：形成电连接到半导体衬底的导电焊盘和围绕导电焊盘的下绝缘层; 以及在所述下绝缘层上形成位线堆叠，其中所述层间电介质层覆盖所述位线堆叠，并且所述位线堆叠之间的所述接触孔暴露所述导电焊盘。

公开(公告)号：US07141123B2

公开(公告)日：2006-11-28

申请号：US10759093

申请日：2004-01-20

申请人： Moon-hee Lee ,  Kun-tack Lee ,  Woo-gwan Shim ,  Jong-ho Chung

发明人： Moon-hee Lee ,  Kun-tack Lee ,  Woo-gwan Shim ,  Jong-ho Chung

IPC分类号： B08B7/00 ,  B08B3/12 ,  B08B6/00 ,  B08B3/00 ,  B08B5/00 ,  B08B1/02 ,  B08B7/04

CPC分类号： H01L21/67028 ,  B08B7/0057 ,  B08B7/02 ,  B24C1/003 ,  Y10S134/902

摘要： A cleanling apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.

摘要翻译： 用于从基材表面除去污染物的清洁装置包括两部分：一种产生包含冷冻颗粒的气溶胶并将气溶胶引导到基板的表面上以通过物理力从表面去除污染物，另一部分 包含气态反应物的流体被引导到基底的表面上，同时照射表面以引起反应物和表面上的有机污染物之间的化学反应，以化学去除有机污染物。 在清洗基板的方法中，物理和化学清洗过程以彼此分离的方式进行，使得气溶胶的冻结颗粒不暴露于在照射基板的表面时使用的光的影响。 因此，气溶胶在清洁基材中的有效性最大化。

公开(公告)号：US06701942B2

公开(公告)日：2004-03-09

申请号：US10012564

申请日：2001-12-12

申请人： Moon-hee Lee ,  Kun-tack Lee ,  Woo-gwan Shim ,  Jong-ho Chung

发明人： Moon-hee Lee ,  Kun-tack Lee ,  Woo-gwan Shim ,  Jong-ho Chung

IPC分类号： B08B302

CPC分类号： H01L21/67028 ,  B08B7/0057 ,  B08B7/02 ,  B24C1/003 ,  Y10S134/902

摘要： A cleaning apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.

摘要翻译： 用于从基材表面去除污染物的清洁装置包括两部分：一个产生包含冷冻颗粒的气溶胶并将气溶胶引导到基板的表面上以通过物理力从表面去除污染物，另一部分 包含气态反应物的流体被引导到基底的表面上，同时照射表面以引起反应物和表面上的有机污染物之间的化学反应，以化学去除有机污染物。 在清洗基板的方法中，物理和化学清洗过程以彼此分离的方式进行，使得气溶胶的冻结颗粒不暴露于在照射基板的表面时使用的光的影响。 因此，气溶胶在清洁基材中的有效性最大化。

公开(公告)号：US20050087893A1

公开(公告)日：2005-04-28

申请号：US10997902

申请日：2004-11-29

申请人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

发明人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

IPC分类号： H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/02057 ,  H01L21/31116

摘要： A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber. The oxide layer can be removed with a high selectivity while avoiding damage or contamination of the underlying layer.

摘要翻译： 用于除去氧化物层的方法，例如天然氧化物层和使用该方法去除氧化物层的半导体制造装置。 垂直移动的基座安装在处理室的下部处，并且当硅晶片位于处理室的下部时，将硅晶片装载到基座上。 空气从处理室排出，在其中形成真空条件。 将等离子体状态的氢气和含氟气体供给到处理室，以引起与硅晶片上的氧化物层的化学反应，产生反应层。 然后，将基座向上移动到处理室的上部，通过安装在处理室上部的加热器对基座上的硅晶片退火，从而使反应层蒸发。 蒸发的反应层被排出室外。 可以以高选择性去除氧化物层，同时避免下层的损坏或污染。

公开(公告)号：US07488688B2

公开(公告)日：2009-02-10

申请号：US10997902

申请日：2004-11-29

申请人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

发明人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/02057 ,  H01L21/31116

摘要： A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber. The oxide layer can be removed with a high selectivity while avoiding damage or contamination of the underlying layer.

摘要翻译： 用于除去氧化物层的方法，例如天然氧化物层和使用该方法去除氧化物层的半导体制造装置。 垂直移动的基座安装在处理室的下部处，并且当硅晶片位于处理室的下部时，将硅晶片装载到基座上。 空气从处理室排出，在其中形成真空条件。 将等离子体状态的氢气和含氟气体供给到处理室，以引起与硅晶片上的氧化物层的化学反应，产生反应层。 然后，将基座向上移动到处理室的上部，通过安装在处理室上部的加热器对基座上的硅晶片退火，从而使反应层蒸发。 蒸发的反应层被排出室外。 可以以高选择性去除氧化物层，同时避免下层的损坏或污染。

公开(公告)号：US06171405B2

公开(公告)日：2001-01-09

申请号：US09467709

申请日：1999-12-20

申请人： Moon-hee Lee

发明人： Moon-hee Lee

IPC分类号： B08B308

CPC分类号： C11D11/0047 ,  C11D3/042 ,  H01L21/02063

摘要： Cleaning solutions for removing contaminants from integrated circuit substrates comprise fluoroboronic acid and phosphoric acid. Methods of removing contaminants from integrated circuit substrates comprise contacting the substrates with cleaning solutions comprising fluoroboronic acid and phosphoric acid. The integrated circuit substrates are then contacted with aqueous solutions.

摘要翻译： 用于从集成电路基板去除污染物的清洁溶液包括氟硼酸和磷酸。 从集成电路基板去除污染物的方法包括使基板与包含氟硼酸和磷酸的清洁溶液接触。 然后将集成电路基板与水溶液接触。

公开(公告)号：US6043206A

公开(公告)日：2000-03-28

申请号：US211673

申请日：1998-12-14

申请人： Jae-inh Song ,  Moon-hee Lee ,  Heung-soo Park ,  Young-bum Koh

发明人： Jae-inh Song ,  Moon-hee Lee ,  Heung-soo Park ,  Young-bum Koh

IPC分类号： C11D3/02 ,  C11D11/00 ,  H01L21/306 ,  C11D3/06 ,  B08B3/08 ,  C23G1/02

CPC分类号： C11D11/0047 ,  C11D3/042 ,  H01L21/02063

摘要： Cleaning solutions for removing contaminants from integrated circuit substrates comprise fluoroboric acid and phosphoric acid. Methods of removing contaminants from integrated circuit substrates comprise contacting the substrates with cleaning solutions comprising fluoroboric acid and phosphoric acid. The integrated circuit substrates are then contacted with aqueous solutions.

摘要翻译： 用于从集成电路基板去除污染物的清洁溶液包括氟硼酸和磷酸。 从集成电路基板去除污染物的方法包括使基板与包含氟硼酸和磷酸的清洁溶液接触。 然后将集成电路基板与水溶液接触。