公开(公告)号：US07141123B2

公开(公告)日：2006-11-28

申请号：US10759093

申请日：2004-01-20

申请人： Moon-hee Lee ,  Kun-tack Lee ,  Woo-gwan Shim ,  Jong-ho Chung

发明人： Moon-hee Lee ,  Kun-tack Lee ,  Woo-gwan Shim ,  Jong-ho Chung

IPC分类号： B08B7/00 ,  B08B3/12 ,  B08B6/00 ,  B08B3/00 ,  B08B5/00 ,  B08B1/02 ,  B08B7/04

CPC分类号： H01L21/67028 ,  B08B7/0057 ,  B08B7/02 ,  B24C1/003 ,  Y10S134/902

摘要： A cleanling apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.

摘要翻译： 用于从基材表面除去污染物的清洁装置包括两部分：一种产生包含冷冻颗粒的气溶胶并将气溶胶引导到基板的表面上以通过物理力从表面去除污染物，另一部分 包含气态反应物的流体被引导到基底的表面上，同时照射表面以引起反应物和表面上的有机污染物之间的化学反应，以化学去除有机污染物。 在清洗基板的方法中，物理和化学清洗过程以彼此分离的方式进行，使得气溶胶的冻结颗粒不暴露于在照射基板的表面时使用的光的影响。 因此，气溶胶在清洁基材中的有效性最大化。

公开(公告)号：US06701942B2

公开(公告)日：2004-03-09

申请号：US10012564

申请日：2001-12-12

申请人： Moon-hee Lee ,  Kun-tack Lee ,  Woo-gwan Shim ,  Jong-ho Chung

发明人： Moon-hee Lee ,  Kun-tack Lee ,  Woo-gwan Shim ,  Jong-ho Chung

IPC分类号： B08B302

CPC分类号： H01L21/67028 ,  B08B7/0057 ,  B08B7/02 ,  B24C1/003 ,  Y10S134/902

摘要： A cleaning apparatus for removing contaminants from the surface of a substrate includes two parts: one which produces an aerosol including frozen particles and directs the aerosol onto the surface of the substrate to remove contaminants from the surface by physical force, and another part in which a fluid including a gaseous reactant is directed onto the surface of the substrate while the surface is irradiated to cause a chemical reaction between the reactant and organic contaminants on the surface, to chemically removing the organic contaminants. In the method of cleaning the substrate, the physical and chemical cleaning processes are carried out in a separate manner from one another so that the frozen particles of the aerosol are not exposed to the effects of the light used in irradiating the surface of the substrate. Therefore, the effectiveness of the aerosol in cleaning the substrate is maximized.

摘要翻译： 用于从基材表面去除污染物的清洁装置包括两部分：一个产生包含冷冻颗粒的气溶胶并将气溶胶引导到基板的表面上以通过物理力从表面去除污染物，另一部分 包含气态反应物的流体被引导到基底的表面上，同时照射表面以引起反应物和表面上的有机污染物之间的化学反应，以化学去除有机污染物。 在清洗基板的方法中，物理和化学清洗过程以彼此分离的方式进行，使得气溶胶的冻结颗粒不暴露于在照射基板的表面时使用的光的影响。 因此，气溶胶在清洁基材中的有效性最大化。

公开(公告)号：US20080014752A1

公开(公告)日：2008-01-17

申请号：US11738155

申请日：2007-04-20

申请人： Ji-hoon Cha ,  Chang-ki Hong ,  Kun-tack Lee ,  Woo-gwan Shim ,  Chang-sup Mun ,  Ho-wook Choi

发明人： Ji-hoon Cha ,  Chang-ki Hong ,  Kun-tack Lee ,  Woo-gwan Shim ,  Chang-sup Mun ,  Ho-wook Choi

IPC分类号： H01L21/311

CPC分类号： H01L21/3086 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3088 ,  H01L21/32139

摘要： A method of forming fine pitch hardmask patterns includes forming a hardmask layer on a substrate and forming a plurality of first mask patterns on the hardmask layer. A buffer layer is formed on the plurality of first mask patterns, and has an upper surface defining recesses between adjacent first mask patterns. Second mask patterns are formed within the recesses formed in the upper surface of the buffer layer. The buffer layer is partially removed to expose upper surfaces of the plurality of first mask patterns, and the buffer layer is then partially removed using the first mask patterns and the second mask patterns as an etch mask to expose the hardmask layer between the first mask pattern and the second mask pattern. Using the first mask patterns and the second mask patterns as an etch mask, the hardmask layer is etched to form hardmask patterns.

摘要翻译： 形成细间距硬掩模图案的方法包括在基底上形成硬掩模层并在硬掩模层上形成多个第一掩模图案。 缓冲层形成在多个第一掩模图案上，并且具有在相邻的第一掩模图案之间限定凹部的上表面。 在形成在缓冲层的上表面中的凹部内形成第二掩模图案。 部分地去除缓冲层以暴露多个第一掩模图案的上表面，然后使用第一掩模图案和第二掩模图案作为蚀刻掩模来部分地去除缓冲层，以在第一掩模图案之间暴露硬掩模层 和第二掩模图案。 使用第一掩模图案和第二掩模图案作为蚀刻掩模，硬掩模层被蚀刻以形成硬掩模图案。

公开(公告)号：US07745338B2

公开(公告)日：2010-06-29

申请号：US11738155

申请日：2007-04-20

申请人： Ji-hoon Cha ,  Chang-ki Hong ,  Kun-tack Lee ,  Woo-gwan Shim ,  Chang-sup Mun ,  Ho-wook Choi

发明人： Ji-hoon Cha ,  Chang-ki Hong ,  Kun-tack Lee ,  Woo-gwan Shim ,  Chang-sup Mun ,  Ho-wook Choi

IPC分类号： H01L21/311 ,  H01L21/76 ,  H01L21/4763

CPC分类号： H01L21/3086 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3088 ,  H01L21/32139

摘要： A method of forming fine pitch hardmask patterns includes forming a hardmask layer on a substrate and forming a plurality of first mask patterns on the hardmask layer. A buffer layer is formed on the plurality of first mask patterns, and has an upper surface defining recesses between adjacent first mask patterns. Second mask patterns are formed within the recesses formed in the upper surface of the buffer layer. The buffer layer is partially removed to expose upper surfaces of the plurality of first mask patterns, and the buffer layer is then partially removed using the first mask patterns and the second mask patterns as an etch mask to expose the hardmask layer between the first mask pattern and the second mask pattern. Using the first mask patterns and the second mask patterns as an etch mask, the hardmask layer is etched to form hardmask patterns.

摘要翻译： 形成细间距硬掩模图案的方法包括在基底上形成硬掩模层并在硬掩模层上形成多个第一掩模图案。 缓冲层形成在多个第一掩模图案上，并且具有在相邻的第一掩模图案之间限定凹部的上表面。 在形成在缓冲层的上表面中的凹部内形成第二掩模图案。 部分地去除缓冲层以暴露多个第一掩模图案的上表面，然后使用第一掩模图案和第二掩模图案作为蚀刻掩模来部分地去除缓冲层，以在第一掩模图案之间暴露硬掩模层 和第二掩模图案。 使用第一掩模图案和第二掩模图案作为蚀刻掩模，硬掩模层被蚀刻以形成硬掩模图案。

公开(公告)号：US06565736B2

公开(公告)日：2003-05-20

申请号：US09945722

申请日：2001-09-05

申请人： Im-soo Park ,  Kun-tack Lee ,  Young-min Kwon ,  Sang-rok Hah ,  Woo-gwan Shim ,  Hyung-ho Ko

发明人： Im-soo Park ,  Kun-tack Lee ,  Young-min Kwon ,  Sang-rok Hah ,  Woo-gwan Shim ,  Hyung-ho Ko

IPC分类号： C02F1461

CPC分类号： C02F1/4618 ,  C02F2001/46161 ,  C02F2201/46115 ,  C02F2201/46145 ,  C02F2209/04 ,  C02F2209/06 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/02074 ,  Y02E60/366

摘要： A wet process performed in the manufacture of semiconductor devices with cathode water and anode water produced from electrolyte using a 3-cell electrolyzer having an intermediate cell for the electrolyte. The 3-cell electrolyzer includes an anode cell, a cathode cell, and an intermediate cell between the anode and cathode cells, which are partitioned by ion exchange membranes. Deionized water is supplied into the anode and cathode cells, and the intermediate cell is filled with an electrolytic aqueous solution to perform electrolysis. The anode water containing oxidative substances or the cathode water containing reductive substances, which are produced by the electrolysis process, are used in the wet process.

摘要翻译： 在使用具有用于电解质的中间电池的3电池电解器的由电解质产生的阴极水和阳极水的半导体器件的制造中进行的湿法。 3电池电解器包括阳极电池，阴极电池和在阳极和阴极电池之间的由离子交换膜分隔的中间电池。 将去离子水供应到阳极和阴极单元中，并且中间单元填充有电解水溶液以进行电解。 含有氧化物质的阳极水或含有通过电解方法生产的还原性物质的阴极水在湿法中使用。

公开(公告)号：US07488688B2

公开(公告)日：2009-02-10

申请号：US10997902

申请日：2004-11-29

申请人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

发明人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

IPC分类号： H01L21/302

CPC分类号： H01L21/02057 ,  H01L21/31116

摘要： A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber. The oxide layer can be removed with a high selectivity while avoiding damage or contamination of the underlying layer.

摘要翻译： 用于除去氧化物层的方法，例如天然氧化物层和使用该方法去除氧化物层的半导体制造装置。 垂直移动的基座安装在处理室的下部处，并且当硅晶片位于处理室的下部时，将硅晶片装载到基座上。 空气从处理室排出，在其中形成真空条件。 将等离子体状态的氢气和含氟气体供给到处理室，以引起与硅晶片上的氧化物层的化学反应，产生反应层。 然后，将基座向上移动到处理室的上部，通过安装在处理室上部的加热器对基座上的硅晶片退火，从而使反应层蒸发。 蒸发的反应层被排出室外。 可以以高选择性去除氧化物层，同时避免下层的损坏或污染。

公开(公告)号：US20050087893A1

公开(公告)日：2005-04-28

申请号：US10997902

申请日：2004-11-29

申请人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

发明人： Seung-pil Chung ,  Kyu-whan Chang ,  Sun-jung Lee ,  Kun-tack Lee ,  Im-soo Park ,  Kwang-wook Lee ,  Moon-hee Lee

IPC分类号： H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/02057 ,  H01L21/31116

摘要： A method for removing an oxide layer such as a natural oxide layer and a semiconductor manufacturing apparatus which uses the method to remove the oxide layer. A vertically movable susceptor is installed at the lower portion in a processing chamber and a silicon wafer is loaded onto the susceptor when it is at the lower portion of the processing chamber. The air is exhausted from the processing chamber to form a vacuum condition therein. A hydrogen gas in a plasma state and a fluorine-containing gas are supplied into the processing chamber to induce a chemical reaction with the oxide layer on the silicon wafer, resulting in a reaction layer. Then, the susceptor is moved up to the upper portion of the processing chamber, to anneal the silicon wafer on the susceptor with a heater installed at the upper portion of the processing chamber, thus vaporizing the reaction layer. The vaporized reaction layer is exhausted out of the chamber. The oxide layer can be removed with a high selectivity while avoiding damage or contamination of the underlying layer.

摘要翻译： 用于除去氧化物层的方法，例如天然氧化物层和使用该方法去除氧化物层的半导体制造装置。 垂直移动的基座安装在处理室的下部处，并且当硅晶片位于处理室的下部时，将硅晶片装载到基座上。 空气从处理室排出，在其中形成真空条件。 将等离子体状态的氢气和含氟气体供给到处理室，以引起与硅晶片上的氧化物层的化学反应，产生反应层。 然后，将基座向上移动到处理室的上部，通过安装在处理室上部的加热器对基座上的硅晶片退火，从而使反应层蒸发。 蒸发的反应层被排出室外。 可以以高选择性去除氧化物层，同时避免下层的损坏或污染。

公开(公告)号：US20090117499A1

公开(公告)日：2009-05-07

申请号：US12232594

申请日：2008-09-19

申请人： Se-yeon Kim ,  Yong-kyun Ko ,  Sang-mi Lee ,  Yang-koo Lee ,  Hun-jung Yi ,  Kun-tack Lee

发明人： Se-yeon Kim ,  Yong-kyun Ko ,  Sang-mi Lee ,  Yang-koo Lee ,  Hun-jung Yi ,  Kun-tack Lee

IPC分类号： G03F7/20 ,  C11D3/20

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： A cleaning solution for an immersion photolithography system according to example embodiments may include an ether-based solvent, an alcohol-based solvent, and a semi-aqueous-based solvent. In the immersion photolithography system, a plurality of wafers coated with photoresist films may be exposed pursuant to an immersion photolithography process using an immersion fluid. The area contacted by the immersion fluid during the exposure process may accumulate contaminants. Accordingly, the area contacted by the immersion fluid during the exposure process may be washed with the cleaning solution according to example embodiments so as to reduce or prevent defects in the immersion photolithography system.

摘要翻译： 根据示例性实施方式的用于浸没式光刻系统的清洁溶液可以包括醚类溶剂，醇类溶剂和半水性溶剂。 在浸没式光刻系统中，可以使用浸没流体根据浸没光刻工艺来曝光涂覆有光致抗蚀剂膜的多个晶片。 在曝光过程中浸入液接触的区域可能会积聚污染物。 因此，可以利用根据示例性实施例的清洗溶液洗涤曝光过程中浸入液接触的区域，以便减少或防止浸没光刻系统中的缺陷。

公开(公告)号：US07237561B2

公开(公告)日：2007-07-03

申请号：US10685515

申请日：2003-10-16

申请人： Im-soo Park ,  Kun-tack Lee ,  Yong-pil Han ,  Sang-rok Hah

发明人： Im-soo Park ,  Kun-tack Lee ,  Yong-pil Han ,  Sang-rok Hah

IPC分类号： B08B7/04

CPC分类号： H01L21/67115 ,  B08B3/04 ,  B08B7/0071 ,  H01L21/67051 ,  Y10S134/902

摘要： An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying cleaning solution onto the wafer, a cover for covering an upper part of the chamber, and a light source. The cleaning solution, preferably one of ozone water, hydrogen water, or electrolytic-ionized water, may be heated for a short time and used to clean the wafer.

摘要翻译： 一种用于清洁半导体晶片的装置及其清洗方法，其特征在于，所述装置包括：安装有晶片的腔室;安装在所述腔室中的用于支撑和固定晶片的旋转卡盘;用于喷射清洗液的喷嘴 在晶片上，用于覆盖室的上部的盖和光源。 清洁溶液，优选臭氧水，氢水或电解电离水中的一种可以被加热很短时间并用于清洁晶片。

公开(公告)号：US07135413B2

公开(公告)日：2006-11-14

申请号：US10727962

申请日：2003-12-04

申请人： Kwang-wook Lee ,  Im-soo Park ,  Kun-tack Lee ,  Young-min Kwon ,  Sang-rok Hah

发明人： Kwang-wook Lee ,  Im-soo Park ,  Kun-tack Lee ,  Young-min Kwon ,  Sang-rok Hah

IPC分类号： H01L21/302 ,  C25F3/30 ,  C09K13/00

CPC分类号： C04B41/009 ,  C04B41/5315 ,  C04B41/91 ,  C04B2111/00844 ,  C11D7/02 ,  C11D7/265 ,  C11D11/0047 ,  H01L21/31111 ,  C04B35/465 ,  C04B35/491

摘要： A cleaning solution for use in removing a damaged portion of a ferroelectric layer, and a cleaning method using the solution. The cleaning solution includes a fluoride, an organic acid with carboxyl group, an alkaline pH adjusting agent and water.