摘要:
A magnetic field sensing element comprises an underlayer formed on a substrate, a giant magnetoresistance element formed on the underlayer for detecting a change in a magnetic field, and an integrated circuit formed on the substrate for carrying out predetermined arithmetic processing based on a change in a magnetic field detected by the giant magnetoresistance element, wherein the giant magnetoresistance element and the integrated circuit are formed on the same surface.
摘要:
A magnetic field sensing element comprises an underlayer formed on a substrate, a giant magnetoresistance element formed on the underlayer for detecting a change in a magnetic field, and an integrated circuit formed on the substrate for carrying out predetermined arithmetic processing based on a change in a magnetic field detected by the giant magnetoresistance element, wherein the giant magnetoresistance element and the integrated circuit are formed on the same surface.
摘要:
A magnetic field sensing element comprises an underlayer formed on a substrate, a giant magnetic resistance element formed on the underlayer for detecting a change in a magnetic field, and an integrated circuit formed on the substrate for carrying out predetermined arithmetic processing based on a change in a magnetic field detected by the giant magnetic resistance element, wherein the giant magnetic resistance element and the integrated circuit are formed on the same surface.
摘要:
The present invention improves the sensitivity and expands the temperature range of operation of a magnetic detection device used in conjunction with rotary shafts such as those found in automobiles. A magnetic detection element consists of a giant magnetoresistance element and an integrated circuit for performing a predetermined operational processing based on the variation of magnetic field detected by the giant magnetoresistance element, and the magnetic detection element is operated in the magnetic field in the range of exceeding the magnetic field for maximizing the resistance value of the giant magnetoresistance element and below the field obtained by multiplying the saturation magnetic field of the giant magnetoresistance element by 0.8.
摘要:
A magnetic thin film memory wherein the memory is composed of magnetic thin films with a layer of a higher coercive force and a layer of a lower coercive force via a nonmagnetic layer laminated repetitively, or magnetic thin films having the easy magnetization axis which lies between the perpendicular and the horizontal directions of the magnetic thin film, and information is recorded on the layer of a lower coercive force, or information is recorded by changing the direction of the magnetization by means of a magnetic field applied by two recording lines which cross the magnetic thin film, thereby to obtain a sufficient amplitude of reproduction signal even when the size of the memory is reduced.
摘要:
A magnetic thin film memory is provided including a plurality of magnetic thin film memory elements each adapted to record information on the basis of the direction of magnetization of a magnetic thin film thereof, the magnetic thin film memory elements being each composed of at least the magnetic thin film and a switching element. With such a constitution the magnetic thin film memory can be reduced in size while a sufficiently large signal can be obtained with a substantially improved SN ratio. A method for recording and reproduction information using the magnetic thin film memory is also provided. In another aspect, the present invention provides a magnetic thin film memory element including at least two kinds of magnetic layer, and a nonmagnetic layer which is interposed between the magnetic layers wherein the two kinds of magnetic layers are stacked so as to be coupled to each other by an exchange interaction through the nonmagnetic layer.
摘要:
A MR element which has a basically three-layered structure wherein the first and the second magnetic layer sandwich the nonmagnetic layer or of a basically five-layered structure wherein nonmagnetic layers are sandwiched between the first and second magnetic layers and between the second and third magnetic layers, respectively. The MR element of such arrangement offers a surprisingly large MR ratio under application of a sufficiently low magnetic field despite such a simple arrangement thereof.
摘要:
A megneto-optic recording medium which is comprised of a first, a second, a third and a fourth magnetic layers coupled each other between the adjacent layers by an exchange force, wherein said first through fourth magnetic layers satisfy T.sub.c1
摘要:
This invention relates to a multi-layer magneto-optic recording medium having an information recording layer and an initializing layer that can be overwritten by light modulation, and in which adjacent layers, including auxiliary layers provided for more efficient transfer from the initializing layer to the recording layer, are coupled by an exchange force. This structure enables high-density, high-speed recording of audio information, visual information, and computer data.
摘要:
This invention relates to a multi-layer magneto-optic recording medium having an information recording layer and an initializing layer that can be overwritten by light modulation, and in which adjacent layers, including auxiliary layers provided for more efficient transfer from the initializing layer to the recording layer, are coupled by an exchange force. This structure enables high-density, high-speed recording of audio information, visual information, and computer data.