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公开(公告)号：US06525532B2
公开(公告)日：2003-02-25
申请号：US10020403
申请日：2001-12-18
申请人： Toshihiko Sato , Ryoichi Nakatani , Nobuyuki Inaba
发明人： Toshihiko Sato , Ryoichi Nakatani , Nobuyuki Inaba
IPC分类号： H01L4308
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01L43/08 , Y10T428/1114
摘要： A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magneto-resistive element having a first magnetic layer of a soft magnetic material formed on a flat substrate, first and second tunnel barrier layers formed on the first magnetic layer, magnetic particles of a ferromagnetic material provided between the first and second tunnel barrier layers, and a second magnetic layer of a soft magnetic material formed on the second tunnel barrier layer so as to create tunneling junctions.
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公开(公告)号：US06667613B1
公开(公告)日：2003-12-23
申请号：US09661759
申请日：2000-09-14
申请人： Nobuyuki Mitsunaga
发明人： Nobuyuki Mitsunaga
IPC分类号： H01L4308
CPC分类号： G11B5/012 , G11B5/3903 , G11B5/455 , G11B2005/0016 , G11B2005/0018
摘要： An amplifier amplifies a potential difference appearing at sense channels. A resistor of a given resistance value and a magnetoresistive element are connected to the amplifier. First and second inspection currents of difference values are supplied to the resistor. The amplifier thus outputs a first and second voltages. The amplification characteristic or gain of the amplifier can be calculated based on the measured first and second voltages, the values of the inspection currents and the resistance of the resistor. A third inspection current is then supplied to the magnetoresistive element. The output voltage is likewise measured. The value of the third inspection current and the value of the measured output voltage in addition to the amplification characteristic enable a highly accurate determination of the value corresponding to the effective resistance of the magnetoresistive element.
摘要翻译： 放大器放大出现在感测通道的电位差。 给定电阻值的电阻和磁阻元件连接到放大器。 差分值的第一和第二检查电流被提供给电阻器。 因此，放大器输出第一和第二电压。 可以基于测量的第一和第二电压，检查电流的值和电阻器的电阻来计算放大器的放大特性或增益。 然后将第三检查电流提供给磁阻元件。 输出电压同样被测量。 除了放大特性之外，第三检查电流的值和测量的输出电压的值使得能够高度准确地确定与磁阻元件的有效电阻相对应的值。
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公开(公告)号：US06661221B2
公开(公告)日：2003-12-09
申请号：US10162180
申请日：2002-06-05
申请人： Motohisa Taguchi , Izuru Shinjo , Yuji Kawano , Tatsuya Fukami , Kazuhiko Tsutsumi , Yuuichi Sakai , Naoki Hiraoka , Yasuyoshi Hatazawa
发明人： Motohisa Taguchi , Izuru Shinjo , Yuji Kawano , Tatsuya Fukami , Kazuhiko Tsutsumi , Yuuichi Sakai , Naoki Hiraoka , Yasuyoshi Hatazawa
IPC分类号： H01L4308
CPC分类号： G01R33/09
摘要： A magnetic field sensing element comprises an underlayer formed on a substrate, a giant magnetoresistance element formed on the underlayer for detecting a change in a magnetic field, and an integrated circuit formed on the substrate for carrying out predetermined arithmetic processing based on a change in a magnetic field detected by the giant magnetoresistance element, wherein the giant magnetoresistance element and the integrated circuit are formed on the same surface.
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4.发明授权公开(公告)号：US06590389B1
公开(公告)日：2003-07-08
申请号：US09762327
申请日：2001-02-06
IPC分类号： H01L4308
CPC分类号： G01R33/09 , G01R33/06 , H01L43/10 , Y10T428/11
摘要： An InxGa1−xAsySb1−y (0
摘要翻译： 在电介质基板上形成电子浓度为2×10 16 / cm 3以上的In x Ga 1-x As y Sb 1-y（0
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公开(公告)号：US06232777B1
公开(公告)日：2001-05-15
申请号：US09134458
申请日：1998-08-14
申请人： Toshihiko Sato , Ryoichi Nakatani , Nobuyuki Inaba
发明人： Toshihiko Sato , Ryoichi Nakatani , Nobuyuki Inaba
IPC分类号： H01L4308
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01L43/08 , Y10T428/1114
摘要： A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magnetoresistive element having a first magnetic layer of a soft magnetic material formed on a flat substrate, first and second tunnel barrier layers formed on the first magnetic layer, magnetic particles of a ferromagnetic material provided between the first and second tunnel barrier layers, and a second magnetic layer of a soft magnetic material formed on the second tunnel barrier layer so as to create tunneling junctions.
摘要翻译： 磁传感器被构造成能够通过使用具有形成在平坦基板上的软磁材料的第一磁性层的隧道磁阻元件来检测由于高S / N比下的共同隧道效应引起的隧道电流的变化， 形成在第一磁性层上的第一和第二隧道势垒层，设置在第一和第二隧道势垒层之间的铁磁材料的磁性颗粒和形成在第二隧道势垒层上的软磁材料的第二磁性层，以产生 隧道路口
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6.发明授权公开(公告)号：US06489041B2
公开(公告)日：2002-12-03
申请号：US09732807
申请日：2000-12-08
IPC分类号： H01L4308
CPC分类号： B82Y25/00 , B82Y10/00 , H01F1/0063 , H01F1/40 , H01F1/405 , H01L29/127 , Y10S438/962 , Y10S977/701 , Y10S977/773 , Y10S977/774 , Y10S977/838 , Y10T428/12528 , Y10T428/12674
摘要： A practically realizable semiconductor magnetic body having a flat-band structure is disclosed. The semiconductor magnetic body is formed by semiconductor quantum dots arranged on lattice points such that electrons can transfer between neighboring quantum dots and the electron energy band contains a flat-band structure, where each quantum dot is a structure in which electrons are confined inside a region which is surrounded by high energy potential regions, and the flat-band structure is a band structure in which energy dispersion of electrons has hardly any wave number dependency.
摘要翻译： 公开了具有平带结构的实际可实现的半导体磁体。 半导体磁性体由布置在晶格点上的半导体量子点形成，使得电子能够在相邻的量子点之间传递，并且电子能带包含平带结构，其中每个量子点是电子被限制在一个区域内的结构 其由高能势区域包围，平带结构是电子的能量分散几乎没有波数依赖性的带结构。
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公开(公告)号：US06339330B1
公开(公告)日：2002-01-15
申请号：US09660241
申请日：2000-09-12
申请人： Toshihiko Sato , Ryoichi Nakatani , Nobuyuki Inaba
发明人： Toshihiko Sato , Ryoichi Nakatani , Nobuyuki Inaba
IPC分类号： H01L4308
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01L43/08 , Y10T428/1114
摘要： A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magneto-resistive element having a first magnetic layer of a soft magnetic material formed on a flat substrate, first and second tunnel barrier layers formed on the first magnetic layer, magnetic particles of a ferromagnetic material provided between the first and second tunnel barrier layers, and a second magnetic layer of a soft magnetic material formed on the second tunnel barrier layer so as to create tunneling junctions.
摘要翻译： 磁传感器被构造成能够通过使用具有形成在平面上的软磁材料的第一磁性层的隧道式磁阻元件来检测由于高S / N比下的共同隧道效应引起的隧道电流的变化 形成在第一磁性层上的衬底，第一和第二隧道势垒层，设置在第一和第二隧道势垒层之间的铁磁材料的磁性颗粒和形成在第二隧道势垒层上的软磁材料的第二磁性层， 创建隧道路口。
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公开(公告)号：US06331773B1
公开(公告)日：2001-12-18
申请号：US09293039
申请日：1999-04-16
申请人： Bradley N. Engel
发明人： Bradley N. Engel
IPC分类号： H01L4308
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3106 , G11B5/3133 , G11B5/3903 , G11B5/3932 , H01F10/3218 , H01F10/3272 , H01L43/08 , Y10T428/12465
摘要： Good magnetic, wear, and corrosion properties are required of a pinned synthetic anti-ferromagnet used in a top spin valve magnetoresistive sensor for reading magnetic media. The pinned synthetic anti-ferromagnet includes a synthetic anti-ferromagnet. An oxidation protection layer is deposited on the synthetic anti-ferromagnet. A nickel oxide layer for pinning the synthetic anti-ferromagnet is deposited on the oxidation layer.
摘要翻译： 在用于读取磁性介质的顶部自旋阀磁阻传感器中使用的销钉式合成反铁磁体需要良好的磁性，耐磨性和耐腐蚀性。 固定的合成反铁磁体包括合成反铁磁体。 氧化保护层沉积在合成的反铁磁体上。 用于固定合成抗铁磁体的氧化镍层沉积在氧化层上。
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