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1.发明授权Process for preventing melt-back in the production of aluminum-containing laser devices 失效制造含铝激光装置时防止熔融回收的方法
公开(公告)号：US4632709A
公开(公告)日：1986-12-30
申请号：US781707
申请日：1985-09-30
IPC分类号： H01L21/20 , H01L21/208 , H01S5/00
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02625 , H01L21/02628
摘要： A process for the production of semiconductor devices includes: (1) forming a thin semiconductor film containing no aluminum on a first semiconductor layer containing aluminum that is disposed on a substrate one or more (2) forming channels on said thin semiconductor film in such a manner that the channel or channels reach or go through said first semiconductor layer to expose a portion of said substrate, resulting in a channelled substrate for succeeding crystal growth thereon, and (3) producing by epitaxial growth crystalline layers on said channelled substrate by the use of a crystal growth solution having a supersaturation which is high enough to prevent said first semiconductor layer from undergoing meltback.
摘要翻译： 一种制造半导体器件的方法包括：（1）在包含铝的第一半导体层上形成不含铝的薄半导体膜，所述第一半导体层设置在基板上一个或多个（2）在所述薄半导体膜上形成沟槽， 通道或通道到达或穿过所述第一半导体层以暴露所述衬底的一部分，导致用于在其上继续晶体生长的沟道衬底，以及（3）通过使用在所述沟道衬底上的外延生长晶体层产生 具有足够高以防止所述第一半导体层经历回熔的过饱和度的晶体生长溶液。
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公开(公告)号：US4903274A
公开(公告)日：1990-02-20
申请号：US195742
申请日：1988-05-18
IPC分类号： H01S5/40
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate consitute a laser array portion of the semiconductor laser array device.
摘要翻译： 一种半导体激光器阵列器件，包括具有多个沟槽的衬底和设置在衬底上的有源层，从而产生与沟槽对应的有源层内的光波导，其中沟槽设置在衬底的整个区域上， 用于防止将电流注入到位于基板的中心区域外部的一些凹槽中，由此位于基板的中心区域中的其它凹槽构成半导体激光器阵列器件的激光器阵列部分。
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公开(公告)号：US4815088A
公开(公告)日：1989-03-21
申请号：US105638
申请日：1987-10-05
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device with a waveguide structure comprising waveguides designed such that the widths thereof gradually increase from the center waveguide to the waveguides positioned at both sides of the array portions.
摘要翻译： 一种具有波导结构的半导体激光器阵列器件，其包括设计成使得其宽度从中心波导逐渐增加到位于阵列部分两侧的波导的波导。
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公开(公告)号：US4811351A
公开(公告)日：1989-03-07
申请号：US35477
申请日：1987-04-07
CPC分类号： H01S5/028 , G02B6/122 , H01S5/4068
摘要： A semiconductor laser array device comprising a substrate; an index-waveguiding area positioned on said substrate; a Fourier-converting area, which is adjacent to said waveguiding area and in which laser lights emitted with synchronized phases from said waveguiding area undergo the Fourier-conversion, positioned on said substrate; and a reflecting mirror, which is adjacent to said Fourier-converting area and by which said converted laser lights with a 0.degree.-phase shift mode are selectively reflected so as to be incident upon said waveguiding areas.
摘要翻译： 一种半导体激光器阵列器件，包括衬底; 位于所述基板上的折射率波导区域; 傅里叶变换区域，其邻近所述波导区域，并且其中来自所述波导区域的同步相位发射的激光经历傅里叶变换，位于所述基板上; 以及反射镜，其与所述傅立叶变换区域相邻，并且所述经转换的0°相移模式的激光被选择性地反射以入射到所述波导区域。
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公开(公告)号：US4742526A
公开(公告)日：1988-05-03
申请号：US816311
申请日：1986-01-06
CPC分类号： G02B6/2804 , H01S5/4068
摘要： A semiconductor laser array device comprising an optical waveguide which is in a single mode or a multiple mode in the center portion thereof and is in a branching mode at each of both end portions thereof to form a plurality of branching waveguides which are positioned symmetrically with respect to the waveguiding direction of the laser beams and which are parallel to each other near the facets, thereby oscillating laser beams with a 0.degree.-phase shift therebetween.
摘要翻译： 一种半导体激光器阵列器件，包括在其中心部分处于单一模式或多模式的光波导，并且在其两端部分别处于分支模式，以形成多个分支波导，该分支波导相对于 到激光束的波导方向，并且在面附近彼此平行，从而在其间振荡激光束0°相移。
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公开(公告)号：US4914669A
公开(公告)日：1990-04-03
申请号：US222968
申请日：1988-07-22
CPC分类号： H01S5/4031 , H01S5/028 , H01S5/1028 , H01S5/1032
摘要： A semiconductor laser array apparatus comprising a single substrate and a plurality of semiconductor laser devices that are disposed with a given pitch on the substrate, some of the semiconductor laser devices constituting laser devices of a laser oscillation-operating area of the semiconductor laser array apparatus and the other semiconductor laser devices constituting laser devices of the non-laser oscillation-operating areas that are positioned outside of the laser oscillation-operating area, wherein the oscillation threshold current level of at least one of the semiconductor laser devices of each of the non-laser oscillation-operating areas that is the closest to the laser oscillation-operating area is higher than those of the semiconductor laser devices of the laser oscillation-operating area.
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公开(公告)号：US4764936A
公开(公告)日：1988-08-16
申请号：US901759
申请日：1986-08-28
CPC分类号： H01S5/22 , H01S5/4031
摘要： A semiconductor laser array device comprising an oscillation operating area provided with a plurality of first index-waveguides in a parallel manner and a non-oscillation operating area provided with a plurality of second index-waveguides in a parallel manner through which laser light produced in said oscillation operating area are guided through the waveguide from said oscillation operating area to the end facets of the second index-waveguides of said non-oscillation operating area, wherein the second index-waveguides are different in length between the adjacent waveguides and the end facet of each of the second index-waveguides does not function as a cavity facet of the laser but it functions as the light-emitting facet of the device.
摘要翻译： 一种半导体激光器阵列器件，包括以并行方式设置有多个第一折射率波导的振荡操作区域和以所述平行方式设置有多个第二折射率波导的非振荡操作区域，所述第二折射率波导在所述 振荡操作区域被引导通过波导从所述振荡操作区域到所述非振荡操作区域的第二折射率波导的端面，其中第二折射率波导在相邻波导与端面之间的长度不同 每个第二折射率波导不用作激光器的腔面，但其用作器件的发光面。
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公开(公告)号：US4890293A
公开(公告)日：1989-12-26
申请号：US255049
申请日：1988-10-07
申请人： Mototaka Taneya , Kosei Takahashi , Toshiro Hayakawa , Sadayoshi Matsui , Mitsuhiro Matsumoto , Hiroyuki Hosoba
发明人： Mototaka Taneya , Kosei Takahashi , Toshiro Hayakawa , Sadayoshi Matsui , Mitsuhiro Matsumoto , Hiroyuki Hosoba
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/20 , H01S5/209 , H01S5/22 , H01S5/3211 , H01S5/3432 , H01S5/4031
摘要： A semiconductor laser device comprising a first layer that is of a first conductivity type; a second layer that is disposed on the first layer, the second layer having a forbidden bandgap smaller than that of the first layer and having a refraction index larger than that of the first layer; a third layer that is of a second conductivity type; the third layer being disposed over the second layer, having a forbidden bandgap larger than that of the second layer, and having a refraction index smaller than that of the second layer; a fourth layer that functions as a quantum wall, the fourth layer being disposed between the second and third layers and the thickness of the fourth layer being the de Broglie's wavelength or less; and at least one striped mesa, the lower portion of which is constituted by the third layer, wherein the fourth layer has a forbidden bandgap that is larger than that of the energy of photons generated by the second layer, and moreover the fourth layer has the etching characteristics that are different from those of the third layer positioned just above the fourth layer.
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公开(公告)号：US4870651A
公开(公告)日：1989-09-26
申请号：US127836
申请日：1987-12-02
CPC分类号： H01S5/14 , H01S5/4062
摘要： A semiconductor light-emitting apparatus comprising a semiconductor laser array device with a plurality of lasing filaments and a mode-mixing device with a striped optical waveguide that attains an optical phase-coupling with the semiconductor laser array device, whereby beams from the semiconductor laser array device are emitted from the light-emitting facet of the semiconductor light-emitting apparatus via the mode-mixing device, thereby attaining a near-field pattern with a minimized ripple rate on the optical intensity.
摘要翻译： 一种半导体发光装置，包括具有多个激光灯丝的半导体激光器阵列器件和具有带状光波导的模式混合器件，其与半导体激光器阵列器件实现光学相位耦合，由此来自半导体激光器阵列的光束 器件经由模拟混合器件从半导体发光装置的发光面发射，从而获得具有最小纹波率的近场图案对光强度的影响。
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公开(公告)号：US4799225A
公开(公告)日：1989-01-17
申请号：US104865
申请日：1987-10-05
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device with a waveguide structure comprising a first array portion which is composed of a plurality of parallel waveguides; a second array portion which is composed of a plurality of parallel waveguides; a third array portion which is composed of a plurality of symmetrically branching waveguides that optically connect the ends of the parallel waveguides of the first array portion; and a fourth array portion which is composed of a plurality of symmetrically branching waveguides that are optically connected to the other ends of the parallel waveguides of the second array portion, the ends of said symmetrically branching waveguides of the fourth array portion meeting one laser-emitting face of said laser array device at which said symmetrically branching waveguides begin to be optically combined with the adjacent symmetrically branching waveguides.
摘要翻译： 一种具有波导结构的半导体激光阵列器件，包括由多个平行波导构成的第一阵列部分; 由多个平行波导构成的第二阵列部分; 第三阵列部分，其由多个对称分支波导构成，所述多个对称分支波导光学连接所述第一阵列部分的平行波导的端部; 以及第四阵列部分，其由多个对称分支波导组成，所述多个对称分支波导光学连接到所述第二阵列部分的平行波导的另一端，所述第四阵列部分的所述对称分支波导的端部满足一个激光发射 所述激光阵列器件的所述对称分支波导开始与相邻对称分支波导光学组合的面。
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