公开(公告)号：US07062618B2

公开(公告)日：2006-06-13

申请号：US10172096

申请日：2002-06-13

申请人： Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama ,  Kazuo Nakamura

发明人： Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama ,  Kazuo Nakamura

IPC分类号： G06F12/00

CPC分类号： G06F12/0638 ,  G06F12/08 ,  G06F2212/2022

摘要： A memory apparatus having a volatile memory for storing data from a host, a nonvolatile memory capable of storing the data stored in the volatile memory, and electrically deleting the data, and a control circuit for controlling data transfer between the volatile memory and the nonvolatile memory. A capacity of a data storage area of the volatile memory is larger than that of a data storage area of the nonvolatile memory.

摘要翻译： 一种具有用于存储来自主机的数据的易失性存储器，能够存储存储在易失性存储器中的数据的非易失性存储器以及电气删除数据的存储装置，以及用于控制易失性存储器和非易失性存储器之间的数据传送的控制电路 。 易失性存储器的数据存储区域的容量大于非易失性存储器的数据存储区域的容量。

公开(公告)号：US07817480B2

公开(公告)日：2010-10-19

申请号：US12409386

申请日：2009-03-23

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G11C5/14

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

公开(公告)号：US07366034B2

公开(公告)日：2008-04-29

申请号：US11797842

申请日：2007-05-08

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G11C7/10

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

公开(公告)号：US20110283054A1

公开(公告)日：2011-11-17

申请号：US13086383

申请日：2011-04-13

申请人： KENJI KOZAKAI ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： KENJI KOZAKAI ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

公开(公告)号：US20110022913A1

公开(公告)日：2011-01-27

申请号：US12896016

申请日：2010-10-01

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G06F1/26 ,  G06F11/07

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

公开(公告)号：US08223563B2

公开(公告)日：2012-07-17

申请号：US13086383

申请日：2011-04-13

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G11C5/14

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

公开(公告)号：US20090187702A1

公开(公告)日：2009-07-23

申请号：US12409386

申请日：2009-03-23

申请人： Kenji KOZAKAI ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji KOZAKAI ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G06F12/02 ,  G06F12/00

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

公开(公告)号：US20060114726A1

公开(公告)日：2006-06-01

申请号：US11330233

申请日：2006-01-12

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G11C16/04 ,  G11C7/10

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

公开(公告)号：US20050007860A1

公开(公告)日：2005-01-13

申请号：US10914363

申请日：2004-08-10

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G06F12/16 ,  G06F12/02 ,  G11C16/02 ,  G11C16/06 ,  G11C16/34 ,  G11C29/00 ,  G11C29/42 ,  G11C8/00

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。

公开(公告)号：US07525852B2

公开(公告)日：2009-04-28

申请号：US12048208

申请日：2008-03-13

申请人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

发明人： Kenji Kozakai ,  Takeshi Nakamura ,  Tatsuya Ishii ,  Motoyasu Tsunoda ,  Shinya Iguchi ,  Junichi Maruyama

IPC分类号： G11C5/14

CPC分类号： G06F12/0246 ,  G06F11/1068 ,  G06F12/06 ,  G06F2212/1036 ,  G11C16/04 ,  G11C16/10 ,  G11C16/349 ,  G11C29/44 ,  G11C29/76 ,  G11C2029/0409

摘要： For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

摘要翻译： 对于允许电子写入和擦除要存储的信息（例如闪存）的非易失性存储器，系统开发者的负载将被减少，并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏，系统无法运行的异常状态。 非易失性存储器设置有替换功能，以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组，所述存储器单元不包括不存在缺陷存储器单元的存储单元组，重写次数用于掌握数量 的每个存储器单元组中的数据重写，并且因此执行存储单元组的替换，使得多个存储单元组之间的重写次数可能没有显着差异，以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据，其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中，并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。