摘要:
An organic light emitting diode display includes a substrate. A control electrode is on the substrate. A gate insulating film covers the control electrode. An input electrode and an output electrode are on the gate insulating film and face each other. An oxide semiconductor is between the input electrode and the output electrode and on the control electrode. A pixel electrode is on portions of the edges of the output electrode and is electrically connected. An organic light emitting member is on the pixel electrode. A common electrode is on the organic light emitting member. The oxide semiconductor and the pixel electrode may be of the same layer.
摘要:
A method for manufacturing an organic light emitting diode display includes disposing a crystalline semiconductor layer on a substrate, disposing a gate line, a driving input electrode, and a driving output electrode on the crystalline semiconductor layer, the gate line including a switching control electrode, patterning the crystalline semiconductor layer using the gate line, the driving input electrode, and the driving output electrode as a mask, disposing a gate insulating layer and an amorphous semiconductor layer on the gate line, the driving input electrode, and the driving output electrode, disposing a data line, a driving voltage line, a switching output electrode, and a driving control electrode on the amorphous semiconductor, the data line including a switching input electrode, disposing a pixel electrode connected to the driving output electrode, disposing a light emitting member on the pixel electrode, and disposing a common electrode on the light emitting member.
摘要:
An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.
摘要:
An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.
摘要:
In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant.
摘要:
An improved OLED display includes a substrate, a semiconductor having a uniform thickness formed on the substrate, first and second ohmic contacts, and a driving voltage line having an input electrode and an output electrode. An insulating layer is formed on the driving voltage line and the output electrode. A control electrode is formed on the insulating layer and overlaps the semiconductor.The method of manufacturing the OLED display entails forming a semiconductor on a substrate, forming a photoresist film on the semiconductor, forming a doped amorphous silicon layer on the photoresist film, removing the photoresist film along with a portion of the doped amorphous silicon disposed on the photoresist film to form first and second ohmic contacts, respectively forming input and output electrodes on the first and second ohmic contacts, forming an insulating layer on the input and output electrodes, and forming a control electrode on the insulating layer.
摘要:
A display device includes a display panel having a display region formed with a plurality of thin film transistors, a light emitting layer disposed in the display region, and a driver supplying a driving signal including a gate signal and a data signal to the thin film transistors. At least one voltage pad is disposed outside of the display region on the display panel to supply a reference voltage to the display region, a power generator generates the reference voltage, and a flexible film is connected between the voltage pad and the power generator to transmit the reference voltage. At least one of the driver and the power generator includes an external power input unit that receives external power.