公开(公告)号：US08860032B2

公开(公告)日：2014-10-14

申请号：US12466100

申请日：2009-05-14

申请人： Byoung-Kwon Choo ,  Joon-Hoo Choi ,  Kyu-Sik Cho ,  Seung-Kyu Park ,  Yong-Hwan Park ,  Sang-Ho Moon

发明人： Byoung-Kwon Choo ,  Joon-Hoo Choi ,  Kyu-Sik Cho ,  Seung-Kyu Park ,  Yong-Hwan Park ,  Sang-Ho Moon

IPC分类号： H01L27/14 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/124 ,  H01L27/1296 ,  H01L29/786

摘要： A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.

摘要翻译： 一种薄膜晶体管基板，包括基板，形成在基板上的第一和第二栅电极，形成在第一和第二栅电极上的栅极绝缘层，形成在栅极上的第一半导体和第二半导体 绝缘层，并且分别与第一栅电极和第二栅电极重叠，形成在第一半导体上并且彼此相对并且彼此分开定位的第一源电极和第一漏电极，源电极连接到 所述第一漏电极和与所述第二源电极相对并间隔开的第二漏电极，其中所述第二源电极和所述第二漏电极形成在所述第二半导体上，以及像素电极，其电连接到所述第二漏电极， 其制造方法以及具有该显示装置的显示装置。

公开(公告)号：US08680531B2

公开(公告)日：2014-03-25

申请号：US13115883

申请日：2011-05-25

申请人： Jae-Seob Lee ,  Yong-Hwan Park ,  Young-Shin Pyo

发明人： Jae-Seob Lee ,  Yong-Hwan Park ,  Young-Shin Pyo

IPC分类号： H01L27/14

CPC分类号： H01L27/127 ,  G02F1/133351 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L29/78603 ,  H01L51/003

摘要： A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

公开(公告)号：US08551827B2

公开(公告)日：2013-10-08

申请号：US13771656

申请日：2013-02-20

申请人： Yong-Hwan Park ,  Kyu-Sik Cho ,  Sang-Ho Moon ,  Byoung-Kwon Choo ,  Min-Chul Shin ,  Tae-Hoon Yang ,  Bo-Kyung Choi ,  Won-Kyu Lee ,  Yun-Gyu Lee ,  Joon-Hoo Choi

发明人： Yong-Hwan Park ,  Kyu-Sik Cho ,  Sang-Ho Moon ,  Byoung-Kwon Choo ,  Min-Chul Shin ,  Tae-Hoon Yang ,  Bo-Kyung Choi ,  Won-Kyu Lee ,  Yun-Gyu Lee ,  Joon-Hoo Choi

IPC分类号： H01L21/00

CPC分类号： H01L27/1251 ,  H01L27/1277 ,  H01L27/1285 ,  H01L27/3262

摘要： An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer.

摘要翻译： 一种有机发光二极管显示装置及其制造方法，所述装置包括基板，所述基板包括像素部分和电路部分; 在所述基板的像素部分上的第一半导体层和第二半导体层; 在所述基板的整个表面上的栅极绝缘层; 栅绝缘层上的栅电极，分别对应于第一半导体层和第二半导体层的栅电极; 与栅电极绝缘的源/漏电极，源/漏电极分别连接到第一和第二半导体层; 连接到第一半导体层的源极/漏极的第一电极; 第一电极上的有机层; 有机层上的第二层; 以及在第一半导体层下面的金属催化剂层。

公开(公告)号：US20130092937A1

公开(公告)日：2013-04-18

申请号：US13431869

申请日：2012-03-27

申请人： Jae-Seob Lee ,  Chang-Yong Jeong ,  Yong-Hwan Park ,  Kyung-Mi Kwon

发明人： Jae-Seob Lee ,  Chang-Yong Jeong ,  Yong-Hwan Park ,  Kyung-Mi Kwon

IPC分类号： H01L23/544

CPC分类号： G09G3/006 ,  G09G2300/0413 ,  G09G2330/12

摘要： A display device according to an exemplary embodiment of the present invention includes a display portion including a plurality of display pixels displaying an image and a dummy portion including a plurality of dummy pixels formed in a periphery region of the display portion. An electrostatic test element group (TEG) may be formed in at least one of the dummy pixels.

摘要翻译： 根据本发明的示例性实施例的显示装置包括显示部分，该显示部分包括显示图像的多个显示像素和包括形成在显示部分的外围区域中的多个虚拟像素的虚拟部分。 静电测试元件组（TEG）可以形成在至少一个虚拟像素中。

公开(公告)号：US08330257B2

公开(公告)日：2012-12-11

申请号：US13543195

申请日：2012-07-06

申请人： Sang-Ho Moon ,  Joon-Hoo Choi ,  Kyu-Sik Cho ,  Byoung-Seong Jeong ,  Yong-Hwan Park

发明人： Sang-Ho Moon ,  Joon-Hoo Choi ,  Kyu-Sik Cho ,  Byoung-Seong Jeong ,  Yong-Hwan Park

IPC分类号： H01L29/786

CPC分类号： H01L29/78678 ,  H01L29/66765

摘要： In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant.

摘要翻译： 在制造薄膜晶体管基板的方法中，半导体图案形成在基板上，第一蚀刻停止层和第二蚀刻停止层依次形成在半导体图案上，第二蚀刻停止层和第一蚀刻停止层 层被顺序地图案化以形成第二蚀刻停止图案和第一蚀刻停止图案。 因此，当使用蚀刻剂对第二蚀刻停止层进行图案化时，第一蚀刻停止层覆盖半导体图案，从而防止半导体图案被蚀刻剂蚀刻。

公开(公告)号：US20120267635A1

公开(公告)日：2012-10-25

申请号：US13543195

申请日：2012-07-06

申请人： Sang-Ho MOON ,  Joon-Hoo CHOI ,  Kyu-Sik CHO ,  Byoung-Seong JEONG ,  Yong-Hwan PARK

发明人： Sang-Ho MOON ,  Joon-Hoo CHOI ,  Kyu-Sik CHO ,  Byoung-Seong JEONG ,  Yong-Hwan PARK

IPC分类号： H01L29/786 ,  H01L27/15

CPC分类号： H01L29/78678 ,  H01L29/66765

摘要： In a method of manufacturing a thin film transistor substrate, a semiconductor pattern is formed on a substrate, a first etch stop layer and a second etch stop layer are sequentially formed on the semiconductor pattern, and the second etch stop layer and the first etch stop layer are sequentially patterned to form a second etch stop pattern and a first etch stop pattern. Thus, when the second etch stop layer is patterned using an etchant, the first etch stop layer covers the semiconductor pattern, thereby preventing the semiconductor pattern from being etched by the etchant.

摘要翻译： 在制造薄膜晶体管基板的方法中，半导体图案形成在基板上，第一蚀刻停止层和第二蚀刻停止层依次形成在半导体图案上，第二蚀刻停止层和第一蚀刻停止层 层被顺序地图案化以形成第二蚀刻停止图案和第一蚀刻停止图案。 因此，当使用蚀刻剂对第二蚀刻停止层进行图案化时，第一蚀刻停止层覆盖半导体图案，从而防止半导体图案被蚀刻剂蚀刻。

公开(公告)号：US08211725B2

公开(公告)日：2012-07-03

申请号：US13040906

申请日：2011-03-04

申请人： Yong-Hwan Park ,  Jae-Seob Lee ,  Moo-Jin Kim ,  Young-Shin Pyo ,  Sang-Joon Seo ,  Hoon-Kee Min ,  Dong-Un Jin

发明人： Yong-Hwan Park ,  Jae-Seob Lee ,  Moo-Jin Kim ,  Young-Shin Pyo ,  Sang-Joon Seo ,  Hoon-Kee Min ,  Dong-Un Jin

IPC分类号： H01L21/00

CPC分类号： H01L27/1266 ,  H01L27/1218 ,  H01L27/1292 ,  H01L2251/566

摘要： A method of manufacturing a flexible display device is disclosed. The method includes arranging a first substrate having a plurality of depression units, forming a first plastic film in each of the plurality of depression units, forming a thin film transistor (TFT) on the first plastic film, forming a display device on the TFT, where the display device is configured to be electrically connected to the TFT, encapsulating an upper portion of the display device, cutting the first substrate, and separating the first substrate from the first plastic film.

摘要翻译： 公开了制造柔性显示装置的方法。 该方法包括布置具有多个凹陷单元的第一基板，在多个凹陷单元中的每一个中形成第一塑料膜，在第一塑料膜上形成薄膜晶体管（TFT），在TFT上形成显示装置， 其中所述显示装置被配置为电连接到所述TFT，封装所述显示装置的上部，切割所述第一基板，以及将所述第一基板与所述第一塑料膜分离。

公开(公告)号：US20120001156A1

公开(公告)日：2012-01-05

申请号：US13077045

申请日：2011-03-31

申请人： Kyu-Sik CHO ,  Won-Kyu LEE ,  Tae-Hoon YANG ,  Byoung-Kwon CHOO ,  Sang-Ho MOON ,  Bo-Kyung CHOI ,  Yong-Hwan PARK ,  Joon-Hoo CHOI ,  Min-Chul SHIN ,  Yun-Gyu LEE

发明人： Kyu-Sik CHO ,  Won-Kyu LEE ,  Tae-Hoon YANG ,  Byoung-Kwon CHOO ,  Sang-Ho MOON ,  Bo-Kyung CHOI ,  Yong-Hwan PARK ,  Joon-Hoo CHOI ,  Min-Chul SHIN ,  Yun-Gyu LEE

IPC分类号： H01L51/52

CPC分类号： H01L27/3279 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3262 ,  H01L27/3265

摘要： An organic light emitting diode display is disclosed. The organic light emitting diode display includes: a substrate including a first region and a second region, a first gate electrode formed over the first region, a second gate electrode formed over the second region, a first gate insulator formed on the first gate electrode, a second gate insulator formed on the second gate electrode, a first semiconductor layer formed on the first gate insulator, the first semiconductor layer including a first channel region, a second semiconductor layer formed on the second gate insulator, the second semiconductor layer including a second channel region, an interlayer insulator formed over the substrate and over at least part of the first and second semiconductor layers, a first etching stop layer formed over the first channel region and surrounded by the interlayer insulator, a second etching stop layer formed over the second channel region and surrounded by the interlayer insulator, a first source electrode and a first drain electrode contacting the first semiconductor layer through the interlayer insulator, and a second source electrode and a second drain electrode contacting the second semiconductor layer through the interlayer insulator.

摘要翻译： 公开了一种有机发光二极管显示器。 有机发光二极管显示器包括：包括第一区域和第二区域的基板，形成在第一区域上的第一栅极电极，形成在第二区域上的第二栅极电极，形成在第一栅电极上的第一栅极绝缘体， 形成在所述第二栅电极上的第二栅极绝缘体，形成在所述第一栅极绝缘体上的第一半导体层，所述第一半导体层包括第一沟道区，形成在所述第二栅极绝缘体上的第二半导体层，所述第二半导体层包括第二栅极绝缘体， 沟道区域，形成在所述衬底上并且在所述第一和第二半导体层的至少一部分上方的层间绝缘体，形成在所述第一沟道区域上并被所述层间绝缘体包围的第一蚀刻停止层，形成在所述第二沟槽区上的第二蚀刻停止层 沟道区域并被层间绝缘体包围，第一源电极和与其接触的第一漏电极 e通过层间绝缘体的第一半导体层，以及通过层间绝缘体与第二半导体层接触的第二源电极和第二漏电极。

公开(公告)号：US20110297952A1

公开(公告)日：2011-12-08

申请号：US13115883

申请日：2011-05-25

申请人： Jae-Seob LEE ,  Yong-Hwan Park ,  Young-Shin Pyo

发明人： Jae-Seob LEE ,  Yong-Hwan Park ,  Young-Shin Pyo

IPC分类号： H01L33/08 ,  H01L33/16 ,  H01L29/786

CPC分类号： H01L27/127 ,  G02F1/133351 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L29/78603 ,  H01L51/003

摘要： A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm.

摘要翻译： 根据示例实施例的薄膜晶体管包括：基板主体; 形成在所述基板主体上并包括具有约2000欧姆/平方至约8000欧姆/平方的表面电阻的多晶硅膜的半导体层; 以及每个与半导体层接触并且包括具有约350至约2000欧姆电阻的金属材料的源电极和漏电极。

公开(公告)号：US06813156B2

公开(公告)日：2004-11-02

申请号：US10139509

申请日：2002-05-07

申请人： Yong-Hwan Park

发明人： Yong-Hwan Park

IPC分类号： H05K716

CPC分类号： G06F1/184 ,  G06F1/181 ,  G06F1/188

摘要： A computer system is provided that includes a casing and a power supplying unit combined to the casing, a pair of guiding projections protruding from opposite sides of the power supplying unit, a pair of guiding members accommodating the pair of guiding projections and guiding the power supplying unit from a released position to a combining position, a stopper provided in at least one of the two guiding members and preventing the power supplying unit from separating beyond the released position, and a supporter supporting the power supplying unit, together with the stopper, when the power supplying unit is opened by rotating through a predetermined angle. With this configuration, the computer system provides a combining structure for a power supplying unit, in which hardware components can be easily cabled, exchanged, and repaired.

摘要翻译： 提供了一种计算机系统，其包括壳体和与壳体组合的供电单元，从供电单元的相对侧突出的一对引导突起，容纳一对引导突起并引导供电的一对引导构件 单元从释放位置到组合位置，设置在所述两个引导构件中的至少一个中并且防止所述供电单元从所述释放位置分离的止动件以及与所述止动件一起支撑所述供电单元的支撑件， 通过旋转预定角度打开供电单元。 利用这种配置，计算机系统提供用于供电单元的组合结构，其中硬件组件可以容易地电缆，交换和修理。