公开(公告)号：US08043550B2

公开(公告)日：2011-10-25

申请号：US11592062

申请日：2006-11-02

申请人： Jae-hyuk Chang ,  Mun-pyo Hong ,  Nam-seok Roh

发明人： Jae-hyuk Chang ,  Mun-pyo Hong ,  Nam-seok Roh

IPC分类号： B29C59/16

CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/2014 ,  H01L29/78633

摘要： A method of manufacturing a display device in which a film deposited on a substrate through openings in a covering layer is easily removed from the covering layer, is described herein, includes forming a master layer having a predetermined pattern of openings on a base substrate; spraying a light shielding material on the master layer; fabricating a mold provided with the light shielding film by forming a moldable material layer on the base substrate and the master layer; the moldable material layer and the light shielding material; arranging, pressurizing, and exposing the mold on an insulation substrate having a photosensitive film formed thereon after separating the mold from the master layer; and developing the photosensitive film after separating the mold from the insulation substrate.

摘要翻译： 本文描述了一种制造其中通过覆盖层中的开口沉积在基板上的薄膜容易从覆盖层除去的显示装置的方法，包括在基底基板上形成具有预定图案的开口的母层; 在主层上喷涂遮光材料; 通过在基底基板和主层上形成可模制材料层来制造设置有遮光膜的模具; 可模制材料层和遮光材料; 在将模具与主层分离之后，将模具布置，加压和曝光在其上形成有感光膜的绝缘基板上; 以及在将模具与绝缘基板分离之后显影感光膜。

公开(公告)号：US07875477B2

公开(公告)日：2011-01-25

申请号：US11490280

申请日：2006-07-19

申请人： Jae-hyuk Chang ,  Nam-seok Roh ,  Mun-pyo Hong ,  Dae-jin Park

发明人： Jae-hyuk Chang ,  Nam-seok Roh ,  Mun-pyo Hong ,  Dae-jin Park

IPC分类号： H01L21/00

CPC分类号： G03F7/0007 ,  G02F1/133504 ,  G02F1/133555 ,  G02F1/13439 ,  G02F2001/133776

摘要： A method of manufacturing a liquid crystal display at a reduced cost is presented. The method entails: preparing an insulating substrate; forming a gate line and a data line on the insulating substrate to define a pixel area; forming a thin film transistor at an intersection of the gate line and the data line; forming A passivation layer on the thin film transistor; positioning a mold having a concavo-convex pattern on the organic passivation layer, pressing the mold, and forming the concavo-convex pattern on the surface of the organic passivation layer. A pixel electrode on the organic passivation layer is formed.

摘要翻译： 提出了一种降低成本制造液晶显示器的方法。 该方法需要：制备绝缘基板; 在所述绝缘基板上形成栅极线和数据线以限定像素区域; 在栅极线和数据线的交点处形成薄膜晶体管; 在薄膜晶体管上形成钝化层; 在有机钝化层上定位具有凹凸图案的模具，按压模具，并在有机钝化层的表面上形成凹凸图案。 形成有机钝化层上的像素电极。

公开(公告)号：US07808044B2

公开(公告)日：2010-10-05

申请号：US11495911

申请日：2006-07-27

申请人： Yong-uk Lee ,  Joon-hak Oh ,  Bo-sung Kim ,  Mun-pyo Hong

发明人： Yong-uk Lee ,  Joon-hak Oh ,  Bo-sung Kim ,  Mun-pyo Hong

IPC分类号： H01L27/12

CPC分类号： H01L51/0541 ,  H01L51/0005 ,  H01L51/0097 ,  H01L51/0545

摘要： The present invention relates to a thin film transistor substrate comprising: an insulating substrate; a source electrode and a drain electrode which are formed on the insulating substrate and separated from each other and have a channel area therebetween; a wall exposing at least portions of the source electrode and the drain electrode, respectively, encompassing the channel area, and formed of fluoropolymer; and an organic semiconductor layer formed inside the wall. Thus, the present invention provides a TFT substrate where an organic semiconductor layer is planarized. Further, the present invention also provides a method of making a TFT substrate of which an organic semiconductor layer is planarized.

摘要翻译： 本发明涉及一种薄膜晶体管基板，包括：绝缘基板; 源电极和漏电极，其形成在绝缘基板上并且彼此分离并且在其间具有沟道区域; 分别暴露出源电极和漏电极的至少部分，其包围沟道区域，并由含氟聚合物形成; 和形成在壁内的有机半导体层。 因此，本发明提供了有机半导体层被平坦化的TFT基板。 此外，本发明还提供一种使有机半导体层平坦化的TFT基板的制造方法。

公开(公告)号：US20100006832A1

公开(公告)日：2010-01-14

申请号：US12561218

申请日：2009-09-16

申请人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung kim ,  Yong-uk Lee

发明人： Joon-hak Oh ,  Mun-pyo Hong ,  Bo-sung kim ,  Yong-uk Lee

IPC分类号： H01L51/10 ,  H01L51/40

CPC分类号： H01L51/0545 ,  B82Y30/00 ,  H01L27/3244 ,  H01L51/0005 ,  H01L51/0016 ,  H01L51/0558

摘要： According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.

摘要翻译： 根据本发明的实施例，显示装置的制造方法包括在绝缘基板上形成包括栅电极的多条栅极线，形成包括彼此间隔开的源电极和漏极的电极层， 在所述栅极电极之间限定沟道区，形成第一阻挡壁，所述第一阻挡壁具有用于暴露所述沟道区的第一开口，所述源极的一部分以及所述第一阻挡壁具有的所述电极层上的所述漏电极的一部分 形成屏蔽膜以覆盖第一开口内的沟道区域，处理第一阻挡壁的表面，去除屏蔽膜，以及在第一开口内部形成有机半导体层。

公开(公告)号：US20070026536A1

公开(公告)日：2007-02-01

申请号：US11447970

申请日：2006-06-07

申请人： Kyu-sik Kim ,  Bo-sung Kim ,  Jung-han Shin ,  Mun-pyo Hong

发明人： Kyu-sik Kim ,  Bo-sung Kim ,  Jung-han Shin ,  Mun-pyo Hong

IPC分类号： H01L21/00

CPC分类号： H01L51/10 ,  H01L51/0545 ,  H01L51/107

摘要： An organic thin film transistor for a liquid crystal display and a method of manufacturing an organic thin film transistor. The method of manufacturing an organic thin film transistor for a liquid crystal display comprises forming a gate conductive film pattern on a substrate; forming a gate insulating film on the substrate and the gate conductive film pattern; forming source and drain electrodes on the gate insulating film; forming an organic semiconductor thin film on an exposed surface of the gate insulating film and the source and drain electrodes; and forming a diamond-like-carbon thin film as an alignment film. A passivation film and the alignment film can both be provided using the diamond-like-carbon thin film.

摘要翻译： 一种用于液晶显示器的有机薄膜晶体管和一种制造有机薄膜晶体管的方法。 制造液晶显示器用有机薄膜晶体管的方法包括在基板上形成栅极导电膜图案; 在基板和栅极导电膜图案上形成栅极绝缘膜; 在栅极绝缘膜上形成源极和漏极; 在所述栅极绝缘膜和所述源极和漏极的暴露表面上形成有机半导体薄膜; 并形成类金刚石碳薄膜作为取向膜。 可以使用类金刚石碳薄膜来提供钝化膜和取向膜。

公开(公告)号：US6110766A

公开(公告)日：2000-08-29

申请号：US352071

申请日：1999-07-14

申请人： Mun-pyo Hong

发明人： Mun-pyo Hong

IPC分类号： H01L21/28 ,  H01L21/00

CPC分类号： H01L21/28008

摘要： An aluminum gate for a thin film transistor is fabricating by implanting ions into the exposed surface of the aluminum gate. The ions are preferably selected from the group consisting of nitrogen, carbon, oxygen and boron ions. A composite layer of aluminum and the implanted ions thereby formed at the exposed surface of the aluminum layer. Gates for thin film transistors, including an aluminum layer and a composite layer of aluminum and another element at the surface thereof can suppress hillocks in the aluminum gate which may be caused by compressive stresses during subsequent fabrication steps. The composite layer can have a low resistance and can allow a direct contact with an indium tin oxide conductive layer.

摘要翻译： 用于薄膜晶体管的铝栅极通过将离子注入铝栅极的暴露表面来制造。 离子优选选自氮，碳，氧和硼离子。 铝的复合层和由此形成在铝层的暴露表面上的注入离子。 用于薄膜晶体管的栅极，包括铝层和铝表面的复合层和另一元件可以抑制铝栅极中的小丘，这可能是由后续制造步骤中的压应力引起的。 复合层可以具有低电阻并且可以允许与氧化铟锡导电层的直接接触。

公开(公告)号：US07671364B2

公开(公告)日：2010-03-02

申请号：US11489144

申请日：2006-07-18

申请人： Woo-jae Lee ,  Mun-pyo Hong ,  Byoung-june Kim ,  Sung-hoon Yang

发明人： Woo-jae Lee ,  Mun-pyo Hong ,  Byoung-june Kim ,  Sung-hoon Yang

IPC分类号： H01L29/786

CPC分类号： H01L27/12 ,  G02F1/133305 ,  H01L27/1248 ,  H01L29/7842 ,  H01L29/78603

摘要： A thin film transistor (TFT) substrate comprises: a plastic insulation substrate; a first silicon nitride layer with a first refractive index, formed one surface of the plastic insulation substrate; and a TFT comprising a second silicon nitride layer formed with a second refractive index smaller than the first refractive index on the first silicon nitride layer. Thus, the present invention provides a TFT substrate wherein there is reduced a problem in that thin films are lifted from a plastic insulation substrate.

摘要翻译： 薄膜晶体管（TFT）基板包括：塑料绝缘基板; 具有第一折射率的第一氮化硅层，形成塑料绝缘基板的一个表面; 以及TFT，其包括在第一氮化硅层上形成的第二折射率小于第一折射率的第二氮化硅层。 因此，本发明提供一种TFT基板，其中减少了由塑料绝缘基板提起薄膜的问题。

公开(公告)号：US07575951B2

公开(公告)日：2009-08-18

申请号：US11486685

申请日：2006-07-14

申请人： Tae-young Choi ,  Jun-hyung Kim ,  Keun-kyu Song ,  Mun-pyo Hong

发明人： Tae-young Choi ,  Jun-hyung Kim ,  Keun-kyu Song ,  Mun-pyo Hong

IPC分类号： H01L51/40

CPC分类号： H01L27/283 ,  H01L27/3244 ,  H01L51/0545

摘要： A method for fabricating a flat panel display, comprising preparing an insulating substrate; forming separated source and drain electrodes on the insulating substrate to define a channel region; forming a first passivation layer on the source and drain electrodes; forming a metal layer having an opening corresponding to the channel region on the first passivation layer; forming a deposition opening in the passivation layer by using the metal layer as a mask to expose the channel region; forming an organic semiconductor layer and a second passivation layer, in turn, in the deposition opening and on the metal layer; and removing the metal layer, the organic semiconductor layer and the second passivation layer while allowing the layers formed in the deposition opening to remain.

摘要翻译： 一种制造平板显示器的方法，包括制备绝缘基板; 在所述绝缘基板上形成分离的源极和漏极以限定沟道区; 在源极和漏极上形成第一钝化层; 在所述第一钝化层上形成具有与所述沟道区对应的开口的金属层; 通过使用金属层作为掩模在钝化层中形成沉积开口以暴露沟道区; 在沉积开口和金属层上依次形成有机半导体层和第二钝化层; 并且在保留形成在沉积开口中的层的同时去除金属层，有机半导体层和第二钝化层。

公开(公告)号：US07453533B2

公开(公告)日：2008-11-18

申请号：US11117826

申请日：2005-04-29

申请人： Woo-jae Lee ,  Mun-pyo Hong

发明人： Woo-jae Lee ,  Mun-pyo Hong

IPC分类号： G02F1/1333 ,  G06F1/16

CPC分类号： G02F1/133305 ,  G02F1/1362

摘要： A jig for delivering a plastic plate used to make a lighter and thinner liquid crystal display plate and a method of fabricating a liquid crystal display are provided. The jig includes a support substrate, an adhesive layer disposed at the support substrate, and an adhesive agent layer disposed at the adhesive layer and surrounded by the adhesive layer.

摘要翻译： 提供一种用于输送用于制造更轻更薄的液晶显示板的塑料板的夹具和制造液晶显示器的方法。 夹具包括支撑基板，设置在支撑基板上的粘合剂层，以及设置在粘合剂层处并被粘合剂层包围的粘合剂层。

公开(公告)号：US20070090457A1

公开(公告)日：2007-04-26

申请号：US11489144

申请日：2006-07-18

申请人： Woo-jae Lee ,  Mun-pyo Hong ,  Byoung-june Kim ,  Sung-hoon Yang

发明人： Woo-jae Lee ,  Mun-pyo Hong ,  Byoung-june Kim ,  Sung-hoon Yang

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L27/12 ,  G02F1/133305 ,  H01L27/1248 ,  H01L29/7842 ,  H01L29/78603

摘要： A thin film transistor (TFT) substrate comprises: a plastic insulation substrate; a first silicon nitride layer with a first refractive index, formed one surface of the plastic insulation substrate; and a TFT comprising a second silicon nitride layer formed with a second refractive index smaller than the first refractive index on the first silicon nitride layer. Thus, the present invention provides a TFT substrate wherein there is reduced a problem in that thin films are lifted from a plastic insulation substrate.

摘要翻译： 薄膜晶体管（TFT）基板包括：塑料绝缘基板; 具有第一折射率的第一氮化硅层，形成塑料绝缘基板的一个表面; 以及TFT，其包括在第一氮化硅层上形成的第二折射率小于第一折射率的第二氮化硅层。 因此，本发明提供一种TFT基板，其中减少了由塑料绝缘基板提起薄膜的问题。