公开(公告)号：US20150325374A1

公开(公告)日：2015-11-12

申请号：US14805491

申请日：2015-07-22

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Akihiro MOTOKI ,  Syunsuke TAKEUCHI ,  Makoto OGAWA ,  Seiichi NISHIHARA ,  Kenichi KAWASAKI ,  Shuji MATSUMOTO

IPC: H01G4/248 ,  B32B37/18 ,  H01G4/012 ,  H01G4/30 ,  H01G4/12 ,  B32B18/00 ,  C23C18/40

CPC classification number: H01G4/248 ,  B32B18/00 ,  B32B37/18 ,  B32B2307/202 ,  B32B2315/02 ,  B32B2457/00 ,  C23C18/40 ,  H01G4/005 ,  H01G4/012 ,  H01G4/12 ,  H01G4/228 ,  H01G4/30

Abstract: In a method of forming a plating layer for an external terminal electrode by applying, for example, copper plating to an end surface of a component main body with respective ends of internal electrodes exposed, and then applying a heat treatment at a temperature of about 1000° C. or more in order to improve the adhesion strength and moisture resistance of the external terminal electrode, the plating layer may be partially melted to decrease the bonding strength of the plating layer. In the step of applying a heat treatment at a temperature of about 1000° C. or more to a component main body with plating layers formed thereon, the average rate of temperature increase from room temperature to the temperature of about 1000° C. or more is set to about 100° C./minute or more. This average rate of temperature increase maintains a moderate eutectic state in the plating layer and ensures a sufficient bonding strength of the plating layer.

Abstract translation: 在形成外部端子电极用镀层的方法中，例如通过对内部电极的两端露出的部件主体的端面进行镀铜，然后在约1000℃的温度下进行热处理 ℃以上，为了提高外部端子电极的粘合强度和耐湿性，可以使镀层部分熔融，降低镀层的接合强度。 在其上形成有镀层的组件主体上，在约1000℃以上的温度下进行热处理的步骤中，平均温度从室温升高至约1000℃以上的温度 设定为约100℃/分钟以上。 该平均升温速率在镀层中保持中等的共晶状态，并确保镀层的充分的接合强度。