公开(公告)号：US20240022234A1

公开(公告)日：2024-01-18

申请号：US18476865

申请日：2023-09-28

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Viktor PLESSKI ,  Soumya YANDRAPALLI ,  Robert B. HAMMOND ,  Bryant GARCIA ,  Patrick TURNER ,  Jesson JOHN ,  Ventsislav YANTCHEV

IPC: H03H9/56 ,  H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H03H3/02

CPC classification number: H03H9/568 ,  H03H9/02228 ,  H03H9/02031 ,  H03H9/132 ,  H03H9/174 ,  H03H9/562 ,  H03H3/02 ,  H03H9/176 ,  H03H9/02015 ,  H03H9/02062 ,  H03H9/564 ,  H03H9/02039 ,  H03H2003/023 ,  H10N30/877

Abstract: Filter devices are disclosed. A filter device includes a piezoelectric plate comprising a supported portion, a first diaphragm, and a second diaphragm. The supported portion is attached to a substrate and the first and second diaphragms spans respective cavities in the substrate. A first interdigital transducer (IDT) has interleaved fingers on the first diaphragm. A second interdigital transducer (IDT) has interleaved fingers on the second diaphragm. A first dielectric layer is between the interleaved fingers of the first IDT, and a second dielectric layer is between the interleaved fingers of the second IDT. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer. The piezoelectric plate and the first and second IDTs are configured such that radio frequency signals applied to first and second IDTs excite primary shear acoustic modes in the respective diaphragms.

公开(公告)号：US20250088167A1

公开(公告)日：2025-03-13

申请号：US18960226

申请日：2024-11-26

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kuan ZHANG ,  James R. COSTA ,  Andrew KAY ,  Greg DYER ,  Viktor PLESSKI ,  Soumya YANDRAPALLI ,  Robert B. HAMMOND ,  Bryant GARCIA ,  Patrick TURNER ,  Jesson JOHN ,  Ventsislav YANTCHEV

IPC: H03H9/02 ,  H03H3/02 ,  H03H3/04 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56

Abstract: Acoustic filters, resonators and methods are disclosed. An acoustic filter device includes a substrate; a piezoelectric layer attached to the substrate, wherein at least a portion of the piezoelectric layer is disposed over a cavity of the acoustic resonator device; and an interdigital transducer (IDT) on a surface of the piezoelectric layer, the IDT including interleaved fingers extending at least over the portion of the piezoelectric layer disposed over the cavity. The cavity has at least one rounded corner, and a portion of interleaved fingers extend from at least one busbar. Moreover, at least a portion of the rounded corner of the cavity is under the at least one busbar in a plan view of the piezoelectric layer.

公开(公告)号：US20240380376A1

公开(公告)日：2024-11-14

申请号：US18783009

申请日：2024-07-24

Applicant: MURATA MANUFACTURING CO., LTD.

Inventor： Viktor PLESSKI ,  Soumya YANDRAPALLI ,  Robert B. HAMMOND ,  Bryant GARCIA ,  Patrick TURNER ,  Jesson JOHN ,  Ventsislav YANTCHEV

IPC: H03H9/02 ,  H03H3/02 ,  H03H3/04 ,  H03H9/13 ,  H03H9/17 ,  H03H9/56

Abstract: An acoustic resonator is provided that includes a piezoelectric plate and an interdigital transducer (IDT) including interleaved fingers on the piezoelectric plate. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a shear primary acoustic mode within the piezoelectric plate. The acoustic resonator further includes a front-side dielectric layer on the piezoelectric plate between the fingers of the IDT, wherein a resonance frequency of the acoustic resonator device has an inverse dependence on a thickness of the front-side dielectric layer.

公开(公告)号：US20250070753A1

公开(公告)日：2025-02-27

申请号：US18941877

申请日：2024-11-08

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Viktor PLESSKI ,  Soumya YANDRAPALLI ,  Robert B. HAMMOND ,  Bryant GARCIA ,  Patrick TURNER ,  Jesson JOHN ,  Ventsislav YANTCHEV

IPC: H03H9/56 ,  H03H3/02 ,  H03H9/02 ,  H03H9/13 ,  H03H9/17 ,  H10N30/87

Abstract: A filter device is provided that includes a substrate; a piezoelectric layer coupled to the substrate either directly or via one or more intermediate layers; a first interdigital transducer (IDT) of a first bulk acoustic resonator device on the piezoelectric layer and having interleaved fingers over a first cavity the first bulk acoustic resonator device; a second IDT of a second bulk acoustic resonator device on the piezoelectric layer and having interleaved fingers over a second cavity of the second bulk acoustic resonator device; a first dielectric layer having a first thickness disposed between the interleaved fingers of the first IDT; and a second dielectric layer having a second thickness disposed between the interleaved fingers of the second IDT. The first thickness is greater than the second thickness.

公开(公告)号：US20230336141A1

公开(公告)日：2023-10-19

申请号：US18340481

申请日：2023-06-23

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Tetsuya KIMURA ,  Ventsislav YANTCHEV ,  Patrick TURNER ,  Robert B. HAMMOND ,  Viktor PLESSKI ,  Soumya YANDRAPALLI ,  Bryant GARCIA ,  Jesson JOHN

IPC: H03H9/02 ,  H03H9/17 ,  H03H9/13

CPC classification number: H03H9/02157 ,  H03H9/02102 ,  H03H9/173 ,  H03H9/132 ,  H03H9/02015

Abstract: An acoustic wave device is provided that includes a cavity in a substrate, an overlapping region in which portions of adjacent first and second interdigitated electrodes oppose each other, a first gap region between a first busbar and the overlapping region and that includes the first interdigitated electrodes but not the second interdigitated electrodes, and a second gap region between a second busbar and the overlapping region and that includes the second interdigitated electrodes but not the first interdigitated electrodes. A ratio d/p is about 0.5 or less, where d is a thickness of the piezoelectric layer and p is a distance between centers of adjacent first and second interdigitated electrodes. A first wall of the cavity is located under the first busbar or the first gap region, and a second wall of the cavity is located under the second busbar or the second gap region.