公开(公告)号：US20250023554A1

公开(公告)日：2025-01-16

申请号：US18901302

申请日：2024-09-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takuro OKADA ,  Yuta ISHII

IPC: H03H9/56 ,  H03H9/02 ,  H03H9/13 ,  H03H9/17

Abstract: An acoustic wave device includes acoustic wave resonators each including a support substrate, a piezoelectric body layer, and a functional electrode. The support substrate includes a cavity portion overlapping a portion of the functional electrode in a first direction. The cavity portion is connected to an opening in a portion of the support substrate facing the piezoelectric body layer. The acoustic wave resonators include a first resonator and a second resonator with a larger intersecting width of the functional electrode than the first resonator. A taper angle of the first resonator is larger than a taper angle of the second resonator.

公开(公告)号：US20250023553A1

公开(公告)日：2025-01-16

申请号：US18901293

申请日：2024-09-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takuro OKADA

IPC: H03H9/56 ,  H03H9/02 ,  H03H9/13 ,  H03H9/17

Abstract: An acoustic wave device includes acoustic wave resonators including a support substrate, a piezoelectric body layer, and a functional electrode. The support substrate includes a cavity portion at a position overlapping a portion of the functional electrode in a first direction which is a lamination direction of the support substrate and the piezoelectric body layer. The cavity portion is connected to an opening located in a portion of the support substrate which opposes the piezoelectric body layer. The acoustic wave resonators include a first resonator and a second resonator having a larger intersecting width of the functional electrode than the first resonator. In a cross section along the first and second directions which is a direction in which a current flows inside the acoustic wave resonator, the taper angle of the second resonator is larger than the taper angle of the first resonator.

公开(公告)号：US20240243728A1

公开(公告)日：2024-07-18

申请号：US18420915

申请日：2024-01-24

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takuro OKADA ,  Hideki IWAMOTO ,  Kentaro NAKAMURA

IPC: H03H9/64 ,  H03H9/02 ,  H03H9/145

CPC classification number: H03H9/6453 ,  H03H9/02559 ,  H03H9/02637 ,  H03H9/02866 ,  H03H9/145 ,  H03H9/6483

Abstract: A filter device includes at least one first acoustic wave resonator and at least one second acoustic wave resonator. The at least one first acoustic wave resonator includes a first piezoelectric substrate and first and second IDT electrodes. The first piezoelectric substrate includes a piezoelectric layer with first and second main surfaces facing each other. The first IDT electrode is on the first main surface. The second IDT electrode is on the second main surface and faces the first IDT electrode. The at least one second acoustic wave resonator includes a second piezoelectric substrate and a third IDT electrode. The second piezoelectric substrate includes a piezoelectric layer with third and fourth main surfaces facing each other. The third IDT electrode is on one of the third and fourth main surfaces.

公开(公告)号：US20230378932A1

公开(公告)日：2023-11-23

申请号：US18229203

申请日：2023-08-02

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takuro OKADA

IPC: H03H9/02 ,  H03H9/145 ,  H03H9/25

CPC classification number: H03H9/02866 ,  H03H9/02559 ,  H03H9/02889 ,  H03H9/02992 ,  H03H9/1457 ,  H03H9/25

Abstract: An acoustic wave device includes a piezoelectric film directly or indirectly provided on a high acoustic-velocity material layer, and an IDT electrode on the piezoelectric film. A dielectric film is provided between the IDT electrode and the piezoelectric film. The IDT electrode includes a central region and first and second low acoustic-velocity regions on both respective sides in an extending direction of first and second electrode fingers in an intersecting region where the first and second electrode fingers overlap with each other. A film thickness of the dielectric film is set in a range shown in Table 1.

公开(公告)号：US20240250658A1

公开(公告)日：2024-07-25

申请号：US18530298

申请日：2023-12-06

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takuro OKADA ,  Kentaro NAKAMURA ,  Takuya YABU

IPC: H03H9/02 ,  H03H9/205

CPC classification number: H03H9/02228 ,  H03H9/02015 ,  H03H9/02086 ,  H03H9/205

Abstract: An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and IDT electrodes on the piezoelectric substrate and including curved IDT electrodes. A direction in which a portion of the electrode finger with a curved shape in the curved IDT electrode is convex is an outer side direction. Acoustic wave resonators include first and second acoustic wave resonators including first and second curved IDT electrodes, respectively. The first and second acoustic wave resonators are connected without another acoustic wave resonator interposed therebetween. When one of the directions in which electrode fingers are arranged is a first direction and a direction opposite to the first direction is a second direction, the outer side direction in the first IDT electrode is the first direction, and the outer side direction of the second IDT electrode is the second direction.

公开(公告)号：US20230370049A1

公开(公告)日：2023-11-16

申请号：US18227332

申请日：2023-07-28

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takuro OKADA

IPC: H03H9/25 ,  H03H9/145

CPC classification number: H03H9/25 ,  H03H9/145

Abstract: An acoustic wave device includes a piezoelectric film directly or indirectly provided on a high acoustic-velocity material layer, a dielectric film on the piezoelectric film, and an IDT electrode on the dielectric film. The dielectric film is made of one of silicon oxide, silicon nitride, alumina, and amorphous silicon. When a wavelength determined based on an electrode finger pitch of the IDT electrode is denoted as λ, a duty of the IDT electrode is denoted as y, and a film thickness normalized by the wavelength λ of the dielectric film is denoted as x (%), x and y are in each range of Table 1, Table 2, Table 3, or Table 4 below depending on a material of the dielectric film.

公开(公告)号：US20230032680A1

公开(公告)日：2023-02-02

申请号：US17961604

申请日：2022-10-07

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Munehisa WATANABE ,  Yasumasa TANIGUCHI ,  Katsuya DAIMON ,  Takuro OKADA

IPC: H03H9/25 ,  H03H9/02

Abstract: A piezoelectric device includes a support substrate, an intermediate layer on the support substrate in a first region, a piezoelectric layer on the intermediate layer, a functional element on the piezoelectric layer, and an insulating layer. The insulating layer is located on the support substrate in a second region adjacent to the first region. A surface roughness of the support substrate in the second region is greater than a surface roughness of the support substrate in the first region.

公开(公告)号：US20250030403A1

公开(公告)日：2025-01-23

申请号：US18736823

申请日：2024-06-07

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kentaro NAKAMURA ,  Takuro OKADA ,  Takuya YABU

IPC: H03H9/56 ,  H03H9/13 ,  H03H9/205 ,  H03H9/70

Abstract: A filter device includes a first signal terminal, a second signal terminal, and a plurality of resonators including a plurality of series arm resonators and a plurality of parallel arm resonators. At least one of the plurality of series arm resonators and the plurality of parallel arm resonators is an excitation angle change resonator. The excitation angle change resonator includes a piezoelectric substrate including a piezoelectric body layer, and an IDT electrode including a plurality of electrode fingers provided on the piezoelectric substrate. The piezoelectric body layer has a propagation axis. The plurality of electrode fingers are curved. An excitation direction of an acoustic wave in a portion of an electrode finger in the plurality of electrode fingers is one of first to third directions.

公开(公告)号：US20230198500A1

公开(公告)日：2023-06-22

申请号：US18108067

申请日：2023-02-10

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takuro OKADA ,  Katsuya DAIMON

IPC: H03H9/17 ,  H03H9/02 ,  H03H9/13

CPC classification number: H03H9/176 ,  H03H9/02133 ,  H03H9/133 ,  H03H9/562

Abstract: An acoustic wave device including an IDT electrode on a piezoelectric film, in which a Z-axis direction of a crystal is different from a direction of a normal to a major surface. An overlap region of the IDT electrode includes a central region and first and second edge regions. First and second dielectric films are stacked between the piezoelectric film and first and second electrode fingers in the first and second edge regions. When an angle between a first side surface of the first dielectric film and a major surface of the piezoelectric film is α1 and an angle between a second side surface of the second dielectric film and the major surface of the piezoelectric film is α2, α1≠α2 between at least one electrode finger of the first and second electrode fingers and the piezoelectric film.

公开(公告)号：US20220123711A1

公开(公告)日：2022-04-21

申请号：US17565508

申请日：2021-12-30

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yasumasa TANIGUCHI ,  Takuro OKADA ,  Munehisa WATANABE

IPC: H03H9/02

Abstract: An acoustic wave device includes a silicon substrate, a piezoelectric layer, and an IDT electrode. Each of the silicon substrate and the piezoelectric layer includes first and second opposed main surfaces. The IDT electrode is on the first main surface of the piezoelectric layer, and includes first and second electrode fingers. When a wavelength of an acoustic wave determined by an electrode finger pitch of the IDT electrode is denoted as λ, a distance between the first main surface of the silicon substrate and the second main surface of the piezoelectric layer in a thickness direction of the silicon substrate is less than about 0.84λ. The first main surface of the silicon substrate is rougher than the first main surface of the piezoelectric layer.