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公开(公告)号：US20240030893A1
公开(公告)日：2024-01-25
申请号：US18374116
申请日：2023-09-28
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takeshi NAKAO , Seiji KAI , Hisashi YAMAZAKI
CPC classification number: H03H9/205 , H03H9/02015 , H03H9/02228 , H03H9/568
Abstract: An acoustic wave device includes a piezoelectric substrate including a support and a piezoelectric layer provided on the support and including first and second main surfaces, one or more functional electrodes provided on the first or second main surface, and including at least one pair of electrodes, a first support provided on the piezoelectric substrate so as to surround the functional electrodes, one or more second supports provided on the piezoelectric substrate and on a portion surrounded by the first support, and a cover on the first support and the second supports. A direction in which adjacent electrodes face each other is an electrode facing direction, a region in which the adjacent electrodes overlap each other when viewed from the electrode facing direction is an intersecting region, and the second support at least partially overlaps the intersecting region when viewed from the electrode facing direction.
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公开(公告)号：US20240014799A1
公开(公告)日：2024-01-11
申请号：US18369895
申请日：2023-09-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takeshi NAKAO , Seiji KAI , Hisashi YAMAZAKI
CPC classification number: H03H9/132 , H03H9/02015 , H03H9/02157 , H03H9/133 , H03H9/205 , H03H9/605
Abstract: An acoustic wave device includes a piezoelectric substrate including a support including a support substrate and a piezoelectric layer on the support and including first and second main surfaces, a functional electrode on the first or second main surface and including a pair of electrodes, a first support on the piezoelectric substrate and surrounding the functional electrode, at least one second support on the piezoelectric substrate in a portion surrounded by the first support, and a lid on the first and second supports. The second support does not overlap an intersecting region when viewed from an electrode extending direction and from an electrode facing direction.
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公开(公告)号：US20240007076A1
公开(公告)日：2024-01-04
申请号：US18369893
申请日：2023-09-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Seiji KAI , Hisashi YAMAZAKI , Takeshi NAKAO , Takuya KOYANAGI
CPC classification number: H03H9/02228 , H03H9/02015 , H03H9/173 , H03H9/131
Abstract: An acoustic wave device includes a piezoelectric substrate including a support including a support substrate and a piezoelectric layer on the support, a functional electrode on the piezoelectric layer, at least one support, and a lid. One of the at least one support surrounds the functional electrode on the piezoelectric substrate and the lid is provided on the support. A first cavity is provided in the support. The first cavity overlaps at least a portion of the functional electrode in plan view. A second cavity is surrounded by the piezoelectric substrate, a support provided between the piezoelectric substrate and the lid, and the lid. A height of the first cavity is greater than a height of the second cavity.
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公开(公告)号：US20220321097A1
公开(公告)日：2022-10-06
申请号：US17706723
申请日：2022-03-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Hisashi YAMAZAKI , Seiji KAI , Takeshi NAKAO
Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, a functional electrode at the piezoelectric layer, a frame-shaped support frame on the piezoelectric layer and surrounding the functional electrode in a plan view in a stacking direction of the support and the piezoelectric layer, and a lid covering an opening of the support frame, wherein the support includes a first cavity at a position overlapping at least a portion of the functional electrode in the plan view, a second cavity defined by the piezoelectric layer, the support frame, and the lid between the piezoelectric layer and the lid, the piezoelectric layer includes a through hole communicating with the first and second cavities, and the first and second cavities are under vacuum.
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5.发明申请公开(公告)号：US20190312559A1
公开(公告)日：2019-10-10
申请号：US16446798
申请日：2019-06-20
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Makoto SAWAMURA , Seiji KAI
Abstract: An elastic wave device manufacturing method includes a preparing a piezoelectric wafer on which IDT electrodes are provided in elastic wave device forming portions, providing on a first main surface of the piezoelectric wafer support layers in the elastic wave device forming portions, bonding a cover member to cover the support layers to obtain a multilayer body, cutting the multilayer body in a first direction multiple times, cutting the multilayer body in a second direction orthogonal to the first direction to obtain elastic wave devices, in which a resin layer extends across a boundary between the elastic wave device forming portions adjacent to each other on the first main surface of the piezoelectric wafer, and the second cutting step is performed in a state in which the resin layer is present.
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Patent Agency Ranking
公开(公告)号：US20140003017A1
公开(公告)日：2014-01-02
申请号：US14016415
申请日：2013-09-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Seiji KAI , Shintaro NAKATANI , Mitsuyoshi HIRA , Takao MUKAI , Hisashi YAMAZAKI
CPC classification number: H05K1/182 , H03H3/08 , H03H9/1071 , H05K3/3431 , H05K2201/0999 , H05K2201/10083 , H05K2201/2018 , Y10T29/49124 , Y10T29/49128 , Y10T29/49147 , Y10T29/49165
Abstract: An electronic component includes a frame-shaped supporting body including a heat-curable resin and surrounding a functional unit on one main surface of a substrate and so as to be separated from a periphery of the substrate on an inner side and in which a lid member is fixed to the supporting body such that an opening of the frame-shaped supporting body is sealed. The frame-shaped supporting body includes a frame-shaped supporting body main body, a first protrusion that protrudes toward an inside from the supporting body main body and a second protrusion that protrudes toward an outside from the supporting body main body at a portion where the supporting body main body and the first protrusion are continuous with each other.
Abstract translation: 电子部件包括：框状支撑体，其包括热固性树脂，并且在基板的一个主表面上包围功能单元，并且在内侧与基板的周边分离，并且盖部件 被固定到支撑体上，使得框状支撑体的开口被密封。 框状支撑体包括框架状支撑体主体，从支撑体主体向内侧突出的第一突起和从支撑体主体向外侧突出的第二突起， 支撑体主体和第一突起彼此连续。
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公开(公告)号：US20240030890A1
公开(公告)日：2024-01-25
申请号：US18374114
申请日：2023-09-28
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takeshi NAKAO , Seiji KAI , Hisashi YAMAZAKI
CPC classification number: H03H9/132 , H03H9/02015 , H03H9/02157 , H03H9/205
Abstract: An acoustic wave device includes a piezoelectric substrate including a support and a piezoelectric layer on the support and including first and second main surfaces, one or more functional electrodes on the first or second main surfaces, and including at least one pair of electrodes, a first support surrounding the functional electrodes, one or more second supports on the piezoelectric substrate and on a portion surrounded by the first support, and a cover on the first and second supports. A direction in which adjacent electrodes face each other is an electrode facing direction, a region in which the adjacent electrodes overlap each other when viewed from the electrode facing direction is an intersecting region, a direction in which at least one pair of electrodes extend is an electrode extending direction, and the second support at least partially overlaps the intersecting region when viewed from the electrode extending direction.
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公开(公告)号：US20240007082A1
公开(公告)日：2024-01-04
申请号：US18369899
申请日：2023-09-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Kazunori INOUE , Seiji KAI
CPC classification number: H03H9/17 , H03H3/02 , H03H2003/021 , H03H9/132 , H03H9/02157 , H03H9/02015
Abstract: An acoustic wave device includes a first substrate, a piezoelectric layer adjacent to a first principal surface of the first substrate, a functional electrode on the piezoelectric layer, a second substrate, and a third substrate. The second substrate is adjacent to the first principal surface of the first substrate and faces the first substrate, with a second hollow interposed therebetween. The third substrate is adjacent to a second principal surface of the first substrate and faces the first substrate, with a first hollow interposed therebetween. The acoustic wave device includes a first support portion between the first principal surface of the first substrate and the second substrate, and a second support portion between the first substrate and the third substrate.
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公开(公告)号：US20230261630A1
公开(公告)日：2023-08-17
申请号：US18137650
申请日：2023-04-21
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Seiji KAI , Robert B. HAMMOND , Ventsislav YANTCHEV , Patrick TURNER
CPC classification number: H03H9/02031 , H03H3/02 , H03H9/02228 , H03H9/174 , H03H9/176 , H03H9/562 , H03H9/564 , H03H9/568 , H03H2003/023
Abstract: An acoustic wave device is provided that includes a piezoelectric layer including lithium niobate or lithium tantalate, and a series arm resonator and a parallel arm resonator that each include at least a pair of a first electrode and a second electrode on the piezoelectric layer. The acoustic wave device uses a bulk wave in a first thickness-shear mode. Moreover, a film thickness of a first portion of the piezoelectric layer in the series arm resonator is different from a film thickness of a second portion of the piezoelectric layer in the parallel arm resonator. In each of the series arm resonator and the parallel arm resonator, assuming a film thickness of the piezoelectric layer is d and a distance between centers of the first electrode and the second electrode adjacent to each other is p, a ratio d/p is less than or equal to about 0.5.
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公开(公告)号：US20200321938A1
公开(公告)日：2020-10-08
申请号：US16906090
申请日：2020-06-19
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Makoto SAWAMURA , Seiji KAI , Yutaka KISHIMOTO , Yuzo KISHI
Abstract: In an acoustic wave device, a piezoelectric body is directly or indirectly laminated on a silicon support substrate, and a functional electrode is provided on the piezoelectric body. A support layer is directly or indirectly laminated on the silicon support substrate, and the support layer is located outside the functional electrode when viewed in plan view. A silicon cover layer is provided on the support layer that includes an insulating material, and a space A is defined by the silicon support substrate, the support layer, and the silicon cover layer. The electric resistance of the silicon support substrate is higher than the electric resistance of the silicon cover layer.
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