公开(公告)号：US20230395542A1

公开(公告)日：2023-12-07

申请号：US18452668

申请日：2023-08-21

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kazuya KOBAYASHI ,  Atsushi KUROKAWA ,  Hiroaki TOKUYA ,  Isao OBU ,  Yuichi SAITO

IPC: H01L23/00 ,  H01L23/31 ,  H01L27/06 ,  H01L23/528

CPC classification number: H01L24/05 ,  H01L28/40 ,  H01L23/3171 ,  H01L27/0658 ,  H01L27/0676 ,  H01L2224/05558 ,  H01L28/20 ,  H01L23/3192 ,  H01L27/0664 ,  H01L2224/05573 ,  H01L2224/04105 ,  H01L23/528

Abstract: A target element to be protected and a protrusion are arranged on a substrate. An insulating film arranged on the substrate covers the target element and at least a side surface of the protrusion. An electrode pad for external connection is arranged on the insulating film. The electrode pad at least partially overlaps the target element and the protrusion as seen in plan view. A maximum distance between the upper surface of the protrusion and the electrode pad in the height direction is shorter than a maximum distance between the upper surface of the target element and the electrode pad in the height direction.

公开(公告)号：US20200052663A1

公开(公告)日：2020-02-13

申请号：US16527578

申请日：2019-07-31

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shigeki KOYA ,  Yasunari UMEMOTO ,  Yuichi SAITO ,  Isao OBU ,  Takayuki TSUTSUI

IPC: H03F3/21 ,  H01L23/498 ,  H01F17/00 ,  H01L23/00 ,  H01L23/552 ,  H03F3/213 ,  H03F1/02 ,  H01L23/66

Abstract: A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

公开(公告)号：US20220060158A1

公开(公告)日：2022-02-24

申请号：US17453962

申请日：2021-11-08

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shigeki KOYA ,  Yasunari UMEMOTO ,  Yuichi SAITO ,  Isao OBU ,  Takayuki TSUTSUI

IPC: H03F3/21 ,  H01F17/00 ,  H01L23/00 ,  H01L23/552 ,  H03F3/213 ,  H03F1/02 ,  H01L23/66 ,  H01L23/498

Abstract: A power amplifier module includes a first substrate and a second substrate, at least part of the second substrate being disposed in a region overlapping the first substrate. The second substrate includes a first amplifier circuit and a second amplifier circuit. The first substrate includes a first transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; a second transformer including a primary winding having a first end and a second end and a secondary winding having a first end and a second end; and multiple first conductors disposed in a row between the first transformer and the second transformer, each of the multiple first conductors extending from the wiring layer on a first main surface to the wiring layer on a second main surface of the substrate.

公开(公告)号：US20200006265A1

公开(公告)日：2020-01-02

申请号：US16452637

申请日：2019-06-26

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Kazuya KOBAYASHI ,  Atsushi KUROKAWA ,  Hiroaki TOKUYA ,  Isao OBU ,  Yuichi SAITO

IPC: H01L23/00 ,  H01L49/02 ,  H01L23/31 ,  H01L27/06 ,  H01L23/528

Abstract: A target element to be protected and a protrusion are arranged on a substrate. An insulating film arranged on the substrate covers the target element and at least a side surface of the protrusion. An electrode pad for external connection is arranged on the insulating film. The electrode pad at least partially overlaps the target element and the protrusion as seen in plan view. A maximum distance between the upper surface of the protrusion and the electrode pad in the height direction is shorter than a maximum distance between the upper surface of the target element and the electrode pad in the height direction.

公开(公告)号：US20220189936A1

公开(公告)日：2022-06-16

申请号：US17549615

申请日：2021-12-13

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Takayuki TSUTSUI ,  Yuichi SAITO

IPC: H01L25/16 ,  H01L23/00 ,  H03F3/45

Abstract: A semiconductor device includes first member that includes a switch made of a semiconductor element made from an elemental semiconductor. The first member is joined to a second member including a radio-frequency circuit including a semiconductor element made from a compound semiconductor. The switch and the radio-frequency circuit are connected by a path. The path includes an inter-member connection wire made of a metal pattern arranged on an interlayer insulating film extending from a surface of the second member to a surface of the first member or a conductive member allowing a current to flow in a direction crossing an interface where the first member and the second member are joined.