公开(公告)号：US08580333B2

公开(公告)日：2013-11-12

申请号：US12614978

申请日：2009-11-09

申请人： Mutsumi Kimura ,  Hiroshi Kiguchi

发明人： Mutsumi Kimura ,  Hiroshi Kiguchi

IPC分类号： B05D5/06 ,  B05D1/36 ,  B05D1/32 ,  B05D3/02 ,  B05D1/02

CPC分类号： H01L27/3246 ,  G02F1/133377 ,  G02F1/1341 ,  G02F1/136286 ,  G02F2001/13613 ,  H01L27/3244 ,  H01L27/3276 ,  H01L27/3281 ,  H01L27/3283 ,  H01L51/0004 ,  H01L51/0024 ,  H01L51/5206 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/558

摘要： An object of the invention is to improve patterning accuracy while maintaining low cost, high throughput and a high degree of freedom of an optical material in a matrix type display device and a manufacturing method thereof.In order to achieve the object, a difference in height, a desired distribution of liquid repellency and affinity to liquid, or a desired potential distribution is formed by utilizing first bus lines in a passive matrix type display device or utilizing scanning lines, signal lines, common current supply lines, pixel electrodes, an interlevel insulation film, or a light shielding layer in an active matrix type display device. A liquid optical material is selectively coated at predetermined positions by utilizing the difference in height, the desired distribution of liquid repellency and affinity to liquid, or the desired potential distribution.

摘要翻译： 本发明的目的在于提高图形精度，同时维持矩阵式显示装置中的光学材料的低成本，高产量和高自由度及其制造方法。 为了实现该目的，通过利用无源矩阵型显示装置中的第一总线或者利用扫描线，信号线，等等来形成高度差异，液体排斥性和对液体的亲和​​性的所需分布或期望的电位分布， 有源矩阵型显示装置中的公共电流供给线，像素电极，层间绝缘膜或遮光层。 液体光学材料通过利用高度差异，所需的液体排斥性和对液体的亲和​​力的分布或所需的电位分布来选择性地涂覆在预定位置。

公开(公告)号：US06862011B2

公开(公告)日：2005-03-01

申请号：US10337351

申请日：2003-01-07

申请人： Mutsumi Kimura ,  Hiroshi Kiguchi

发明人： Mutsumi Kimura ,  Hiroshi Kiguchi

IPC分类号： H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L27/32 ,  H01L29/786 ,  G09G3/30

CPC分类号： H01L29/78621 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244

摘要： A current-drive thin-film transistor display apparatus that simultaneously achieves a reduction in the off-current of a switching thin-film transistor and an increase in the on-current of a current thin-film transistor.In an exemplary embodiment, the switching thin-film transistor is formed as a transistor of lightly doped drain structure or offset structure while the current thin-film transistor is formed as a transistor of self-alignment structure. Alternatively, each of the switching thin-film transistor and the current thin-film transistor is formed as a transistor of lightly doped drain structure or offset structure, and the lightly doped drain length or offset length of the switching thin-film transistor is increased relative to that of the current thin-film transistor.

摘要翻译： 同时实现开关薄膜晶体管的截止电流的降低和电流薄膜晶体管的导通电流的增加的电流驱动薄膜晶体管显示装置。在示例性实施例中，开关 薄膜晶体管形成为轻掺杂漏极结构或偏移结构的晶体管，而当前薄膜晶体管形成为自对准结构的晶体管。 或者，开关薄膜晶体管和电流薄膜晶体管中的每一个形成为轻掺杂漏极结构或偏移结构的晶体管，并且开关薄膜晶体管的轻掺杂漏极长度或偏移长度相对增加 到目前的薄膜晶体管的。

公开(公告)号：US07362322B2

公开(公告)日：2008-04-22

申请号：US10314303

申请日：2002-12-09

申请人： Mutsumi Kimura ,  Tatsuya Shimoda ,  Hiroshi Kiguchi

发明人： Mutsumi Kimura ,  Tatsuya Shimoda ,  Hiroshi Kiguchi

IPC分类号： G09G5/00

CPC分类号： H05B33/08 ,  G09G3/32 ,  G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/088 ,  G09G2320/0285 ,  G09G2320/029 ,  G09G2320/043 ,  G09G2320/045 ,  G09G2330/02 ,  G09G2330/028 ,  G09G2360/145 ,  G09G2360/148 ,  H01L27/3262 ,  H01L27/3269

摘要： A display apparatus is provided with a current driving type light-emitting device and a driving device for controlling a driving current flowing through the light-emitting device for each pixel of the display apparatus. The display apparatus consists of power source units for supplying power for causing a driving current to flow via the driving device to the light-emitting device via a power source wire, and signal wire driving units for supplying a data signal to the driving device via signal wires. In addition, voltage adjusting units adjust a voltage for the power source units or a data signal from the signal wire driving units so that a quantity of a driving current flowing through the light-emitting device when a data signal of a predetermined voltage is supplied to the driving device via signal wires or a quantity of emitted light emitted from the light-emitting device comes close to a predetermined reference value.

摘要翻译： 显示装置设置有电流驱动型发光装置和用于控制流过显示装置的每个像素的发光装置的驱动电流的驱动装置。 显示装置包括用于通过电源线将用于使驱动电流经由驱动装置流过发光装置的电力的电源装置和用于经由信号向驱动装置提供数据信号的信号线驱动装置 电线 此外，电压调整单元调整电源单元的电压或来自信号线驱动单元的数据信号，使得当预定电压的数据信号被提供给流过发光器件的驱动电流的量 经由信号线的驱动装置或从发光装置发射的发射光量接近预定的基准值。

公开(公告)号：US20060210704A1

公开(公告)日：2006-09-21

申请号：US11437696

申请日：2006-05-22

申请人： Mutsumi Kimura ,  Hiroshi Kiguchi

发明人： Mutsumi Kimura ,  Hiroshi Kiguchi

IPC分类号： B05D5/12 ,  B05D5/06

CPC分类号： H01L27/3246 ,  G02F1/133377 ,  G02F1/1341 ,  G02F1/136286 ,  G02F2001/13613 ,  H01L27/3244 ,  H01L27/3276 ,  H01L27/3281 ,  H01L27/3283 ,  H01L51/0004 ,  H01L51/0024 ,  H01L51/5206 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/558

摘要： An object of the invention is to improve patterning accuracy while maintaining low cost, high throughput and a high degree of freedom of an optical material in a matrix type display device and a manufacturing method thereof. In order to achieve the object, surface features, including structural surface features, a desired distribution of water repellency, liquid repellency, hydrophilicity and lyophilicity, or a desired potential distribution are formed by utilizing first bus lines in a passive matrix type display device or utilizing scanning lines, signal lines, common feeder lines, pixel electrodes, an interlayer insulation film, or a light shielding layer in an active matrix type display device. A liquid optical material is selectively coated at predetermined positions by utilizing the surface features.

摘要翻译： 本发明的目的在于提高图形精度，同时维持矩阵式显示装置中的光学材料的低成本，高产量和高自由度及其制造方法。 为了实现该目的，通过利用无源矩阵型显示装置中的第一总线或利用无源矩阵型显示装置形成表面特征，包括结构表面特征，防水性，拒水性，亲水性和亲液性或期望的电位分布的所需分布 扫描线，信号线，公共馈线，像素电极，层间绝缘膜或遮光层。 通过利用表面特征，在预定位置选择性地涂布液体光学材料。

公开(公告)号：US08431182B2

公开(公告)日：2013-04-30

申请号：US12230308

申请日：2008-08-27

申请人： Mutsumi Kimura ,  Hiroshi Kiguchi

发明人： Mutsumi Kimura ,  Hiroshi Kiguchi

IPC分类号： B05D5/06 ,  H01J1/62

CPC分类号： H01L27/3246 ,  G02F1/133377 ,  G02F1/1341 ,  G02F1/136286 ,  G02F2001/13613 ,  H01L27/3244 ,  H01L27/3276 ,  H01L27/3281 ,  H01L27/3283 ,  H01L51/0004 ,  H01L51/0024 ,  H01L51/5206 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/558

摘要： An object of the invention is to improve patterning accuracy while maintaining low cost, high throughput and a high degree of freedom of an optical material in a matrix type display device and a manufacturing method thereof.In order to achieve the object, a difference in height, a desired distribution of liquid repellency and affinity to liquid, or a desired potential distribution is formed by utilizing first bus lines in a passive matrix type display device or utilizing scanning lines, signal lines, common current supply lines, pixel electrodes, an interlevel insulation film, or a light shielding layer in an active matrix type display device. A liquid optical material is selectively coated at predetermined positions by utilizing the difference in height, the desired distribution of liquid repellency and affinity to liquid, or the desired potential distribution.

公开(公告)号：US20090053396A1

公开(公告)日：2009-02-26

申请号：US12230308

申请日：2008-08-27

申请人： Mutsumi Kimura ,  Hiroshi Kiguchi

发明人： Mutsumi Kimura ,  Hiroshi Kiguchi

IPC分类号： B05D5/06 ,  B05D5/12

CPC分类号： H01L27/3246 ,  G02F1/133377 ,  G02F1/1341 ,  G02F1/136286 ,  G02F2001/13613 ,  H01L27/3244 ,  H01L27/3276 ,  H01L27/3281 ,  H01L27/3283 ,  H01L51/0004 ,  H01L51/0024 ,  H01L51/5206 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/558

摘要： An object of the invention is to improve patterning accuracy while maintaining low cost, high throughput and a high degree of freedom of an optical material in a matrix type display device and a manufacturing method thereof.In order to achieve the object, a difference in height, a desired distribution of liquid repellency and affinity to liquid, or a desired potential distribution is formed by utilizing first bus lines in a passive matrix type display device or utilizing scanning lines, signal lines, common current supply lines, pixel electrodes, an interlevel insulation film, or a light shielding layer in an active matrix type display device. A liquid optical material is selectively coated at predetermined positions by utilizing the difference in height, the desired distribution of liquid repellency and affinity to liquid, or the desired potential distribution.

摘要翻译： 本发明的目的在于提高图形精度，同时维持矩阵式显示装置中的光学材料的低成本，高产量和高自由度及其制造方法。 为了实现该目的，通过利用无源矩阵型显示装置中的第一总线或者利用扫描线，信号线，等等来形成高度差异，液体排斥性和对液体的亲和​​性的所需分布或期望的电位分布， 有源矩阵型显示装置中的公共电流供给线，像素电极，层间绝缘膜或遮光层。 液体光学材料通过利用高度差异，所需的液体排斥性和对液体的亲和​​力的分布或所需的电位分布来选择性地涂覆在预定位置。

公开(公告)号：US07012278B2

公开(公告)日：2006-03-14

申请号：US10832278

申请日：2004-04-27

申请人： Mutsumi Kimura ,  Hiroshi Kiguchi

发明人： Mutsumi Kimura ,  Hiroshi Kiguchi

IPC分类号： H01L27/15

CPC分类号： H01L29/78621 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244

摘要： The object of the invention is to simultaneously achieve a reduction in the off current of a switching thin-film transistor and an increase in the on current of a current thin-film transistor in a current-drive thin-film transistor display apparatus.To achieve this object, the switching thin-film transistor is formed as a transistor of LDD structure or offset structure while the current thin-film transistor is formed as a transistor of self-alignment structure. Alternatively, each of the switching thin-film transistor and the current thin-film transistor is formed as a transistor of LDD structure or offset structure, and the LDD length or offset length of the switching thin-film transistor is increased relative to that of the current thin-film transistor.

摘要翻译： 本发明的目的是同时实现电流驱动薄膜晶体管显示装置中的开关薄膜晶体管的截止电流的减小和电流薄膜晶体管的导通电流的增加。 为了实现该目的，开关薄膜晶体管形成为LDD结构或偏移结构的晶体管，而当前的薄膜晶体管形成为自对准结构的晶体管。 或者，开关薄膜晶体管和电流薄膜晶体管中的每一个形成为LDD结构或偏移结构的晶体管，并且开关薄膜晶体管的LDD长度或偏移长度相对于 目前的薄膜晶体管。

公开(公告)号：US06542137B2

公开(公告)日：2003-04-01

申请号：US09077072

申请日：1998-05-18

申请人： Mutsumi Kimura ,  Hiroshi Kiguchi

发明人： Mutsumi Kimura ,  Hiroshi Kiguchi

IPC分类号： G09G330

CPC分类号： H01L29/78621 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244

摘要： A display apparatus provides a reduction in the off-current of a switching thin-film transistor and an increase in the on-current of a current thin-film transistor in a current-drive thin-film transistor display apparatus. The switching thin-film transistor is formed as a transistor of LDD structure or offset structure while the current thin-film transistor is formed as a transistor of self-alignment structure. Alternatively, each of the switching thin-film transistor and the current thin-film transistor is formed as a transistor of LDD structure or offset structure, and the LDD length or offset length of the switching thin-film transistor is increased relative to that of the current thin-film transistor.

摘要翻译： 显示装置降低了电流驱动薄膜晶体管显示装置中的开关薄膜晶体管的截止电流和电流薄膜晶体管的导通电流的增加。 开关薄膜晶体管形成为LDD结构或偏移结构的晶体管，而当前薄膜晶体管形成为自对准结构的晶体管。 或者，开关薄膜晶体管和电流薄膜晶体管中的每一个形成为LDD结构或偏移结构的晶体管，并且开关薄膜晶体管的LDD长度或偏移长度相对于 目前的薄膜晶体管。

公开(公告)号：US06518962B2

公开(公告)日：2003-02-11

申请号：US09171526

申请日：1998-10-21

申请人： Mutsumi Kimura ,  Tatsuya Shimoda ,  Hiroshi Kiguchi

发明人： Mutsumi Kimura ,  Tatsuya Shimoda ,  Hiroshi Kiguchi

IPC分类号： G09G500

CPC分类号： H05B33/08 ,  G09G3/32 ,  G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/088 ,  G09G2320/0285 ,  G09G2320/029 ,  G09G2320/043 ,  G09G2320/045 ,  G09G2330/02 ,  G09G2330/028 ,  G09G2360/145 ,  G09G2360/148 ,  H01L27/3262 ,  H01L27/3269

摘要： A display apparatus is provided with a current driving type light-emitting device and a driving device for controlling a driving current flowing through the light-emitting device for each pixel of the display apparatus. The display apparatus consists of power source units for supplying power for causing a driving current to flow via the driving device to the light-emitting device via a power source wire, and signal wire driving units for supplying a data signal to the driving device via signal wires. In addition, voltage adjusting units adjust a voltage for the power source units or a data signal from the signal wire driving units so that a quantity of a driving current flowing through the light emitting device when a data signal of a predetermined voltage is supplied to the driving device via signal wires or a quantity of emitted light emitted from the light-emitting device comes close to a predetermined reference value.

摘要翻译： 显示装置设置有电流驱动型发光装置和用于控制流过显示装置的每个像素的发光装置的驱动电流的驱动装置。 显示装置包括用于通过电源线将用于使驱动电流经由驱动装置流过发光装置的电力的电源装置和用于经由信号向驱动装置提供数据信号的信号线驱动装置 电线 此外，电压调整单元调节电源单元的电压或来自信号线驱动单元的数据信号，使得当预定电压的数据信号被提供给流过发光器件的驱动电流的量 驱动装置经由信号线或从发光装置发射的发射光量接近预定的基准值。

公开(公告)号：US08188647B2

公开(公告)日：2012-05-29

申请号：US12379680

申请日：2009-02-26

申请人： Mutsumi Kimura ,  Tomoyuki Itoh

发明人： Mutsumi Kimura ,  Tomoyuki Itoh

IPC分类号： H01J1/28

CPC分类号： H05B33/08 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0417 ,  G09G2300/0439 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0866 ,  G09G2300/0876 ,  G09G2310/06 ,  G09G2320/043 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3248 ,  H01L51/5206 ,  H01L51/5234 ,  H01L2251/5315 ,  Y02B20/32

摘要： An electroluminescent device including a substrate, a transistor disposed above the substrate, the transistor including a gate electrode, a silicon film opposing the gate electrode, and a gate insulating film between the gate electrode and the silicon film. The electroluminescent device including a first interlayer insulation film covering the transistor, a second interlayer insulation film disposed above the first interlayer insulation film, and a pixel electrode disposed above the second interlayer insulation film and electrically connected to the transistor. The electroluminescent device including an organic EL layer disposed between the pixel electrode and a counter electrode, and a capacitor including a first electrode formed by the same material as the silicon film and a second electrode formed by the same material as the gate electrode.

摘要翻译： 一种电致发光器件，包括衬底，设置在衬底上的晶体管，晶体管包括栅电极，与栅电极相对的硅膜，以及栅电极和硅膜之间的栅极绝缘膜。 电致发光器件包括覆盖晶体管的第一层间绝缘膜，设置在第一层间绝缘膜上方的第二层间绝缘膜和设置在第二层间绝缘膜上方并电连接到晶体管的像素电极。 电致发光器件包括设置在像素电极和对电极之间的有机EL层和包括由与硅膜相同的材料形成的第一电极的电容器和由与栅电极相同的材料形成的第二电极。