摘要:
A display apparatus is provided with a current driving type light-emitting device and a driving device for controlling a driving current flowing through the light-emitting device for each pixel of the display apparatus. The display apparatus consists of power source units for supplying power for causing a driving current to flow via the driving device to the light-emitting device via a power source wire, and signal wire driving units for supplying a data signal to the driving device via signal wires. In addition, voltage adjusting units adjust a voltage for the power source units or a data signal from the signal wire driving units so that a quantity of a driving current flowing through the light-emitting device when a data signal of a predetermined voltage is supplied to the driving device via signal wires or a quantity of emitted light emitted from the light-emitting device comes close to a predetermined reference value.
摘要:
A display apparatus is provided with a current driving type light-emitting device and a driving device for controlling a driving current flowing through the light-emitting device for each pixel of the display apparatus. The display apparatus consists of power source units for supplying power for causing a driving current to flow via the driving device to the light-emitting device via a power source wire, and signal wire driving units for supplying a data signal to the driving device via signal wires. In addition, voltage adjusting units adjust a voltage for the power source units or a data signal from the signal wire driving units so that a quantity of a driving current flowing through the light emitting device when a data signal of a predetermined voltage is supplied to the driving device via signal wires or a quantity of emitted light emitted from the light-emitting device comes close to a predetermined reference value.
摘要:
An object of the invention is to improve patterning accuracy while maintaining low cost, high throughput and a high degree of freedom of an optical material in a matrix type display device and a manufacturing method thereof.In order to achieve the object, a difference in height, a desired distribution of liquid repellency and affinity to liquid, or a desired potential distribution is formed by utilizing first bus lines in a passive matrix type display device or utilizing scanning lines, signal lines, common current supply lines, pixel electrodes, an interlevel insulation film, or a light shielding layer in an active matrix type display device. A liquid optical material is selectively coated at predetermined positions by utilizing the difference in height, the desired distribution of liquid repellency and affinity to liquid, or the desired potential distribution.
摘要:
A current-drive thin-film transistor display apparatus that simultaneously achieves a reduction in the off-current of a switching thin-film transistor and an increase in the on-current of a current thin-film transistor.In an exemplary embodiment, the switching thin-film transistor is formed as a transistor of lightly doped drain structure or offset structure while the current thin-film transistor is formed as a transistor of self-alignment structure. Alternatively, each of the switching thin-film transistor and the current thin-film transistor is formed as a transistor of lightly doped drain structure or offset structure, and the lightly doped drain length or offset length of the switching thin-film transistor is increased relative to that of the current thin-film transistor.
摘要:
An object of the invention is to improve patterning accuracy while maintaining low cost, high throughput and a high degree of freedom of an optical material in a matrix type display device and a manufacturing method thereof. In order to achieve the object, surface features, including structural surface features, a desired distribution of water repellency, liquid repellency, hydrophilicity and lyophilicity, or a desired potential distribution are formed by utilizing first bus lines in a passive matrix type display device or utilizing scanning lines, signal lines, common feeder lines, pixel electrodes, an interlayer insulation film, or a light shielding layer in an active matrix type display device. A liquid optical material is selectively coated at predetermined positions by utilizing the surface features.
摘要:
An object of the invention is to improve patterning accuracy while maintaining low cost, high throughput and a high degree of freedom of an optical material in a matrix type display device and a manufacturing method thereof.In order to achieve the object, a difference in height, a desired distribution of liquid repellency and affinity to liquid, or a desired potential distribution is formed by utilizing first bus lines in a passive matrix type display device or utilizing scanning lines, signal lines, common current supply lines, pixel electrodes, an interlevel insulation film, or a light shielding layer in an active matrix type display device. A liquid optical material is selectively coated at predetermined positions by utilizing the difference in height, the desired distribution of liquid repellency and affinity to liquid, or the desired potential distribution.
摘要:
An object of the invention is to improve patterning accuracy while maintaining low cost, high throughput and a high degree of freedom of an optical material in a matrix type display device and a manufacturing method thereof.In order to achieve the object, a difference in height, a desired distribution of liquid repellency and affinity to liquid, or a desired potential distribution is formed by utilizing first bus lines in a passive matrix type display device or utilizing scanning lines, signal lines, common current supply lines, pixel electrodes, an interlevel insulation film, or a light shielding layer in an active matrix type display device. A liquid optical material is selectively coated at predetermined positions by utilizing the difference in height, the desired distribution of liquid repellency and affinity to liquid, or the desired potential distribution.
摘要:
The object of the invention is to simultaneously achieve a reduction in the off current of a switching thin-film transistor and an increase in the on current of a current thin-film transistor in a current-drive thin-film transistor display apparatus.To achieve this object, the switching thin-film transistor is formed as a transistor of LDD structure or offset structure while the current thin-film transistor is formed as a transistor of self-alignment structure. Alternatively, each of the switching thin-film transistor and the current thin-film transistor is formed as a transistor of LDD structure or offset structure, and the LDD length or offset length of the switching thin-film transistor is increased relative to that of the current thin-film transistor.
摘要:
A display apparatus provides a reduction in the off-current of a switching thin-film transistor and an increase in the on-current of a current thin-film transistor in a current-drive thin-film transistor display apparatus. The switching thin-film transistor is formed as a transistor of LDD structure or offset structure while the current thin-film transistor is formed as a transistor of self-alignment structure. Alternatively, each of the switching thin-film transistor and the current thin-film transistor is formed as a transistor of LDD structure or offset structure, and the LDD length or offset length of the switching thin-film transistor is increased relative to that of the current thin-film transistor.
摘要:
An electroluminescent device including a substrate, a transistor disposed above the substrate, the transistor including a gate electrode, a silicon film opposing the gate electrode, and a gate insulating film between the gate electrode and the silicon film. The electroluminescent device including a first interlayer insulation film covering the transistor, a second interlayer insulation film disposed above the first interlayer insulation film, and a pixel electrode disposed above the second interlayer insulation film and electrically connected to the transistor. The electroluminescent device including an organic EL layer disposed between the pixel electrode and a counter electrode, and a capacitor including a first electrode formed by the same material as the silicon film and a second electrode formed by the same material as the gate electrode.