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公开(公告)号：US20180088258A1
公开(公告)日：2018-03-29
申请号：US15808321
申请日：2017-11-09
Applicant: NALUX CO., LTD.
Inventor： Kazuya YAMAMOTO , Takeshi YAMAMOTO
CPC classification number: G02B5/0294 , B29C33/424 , B29C33/56 , C23F4/00 , G02B1/118 , H01L21/02071 , H01L21/32132 , H01L21/32137 , Y10T428/24355
Abstract: A method for manufacturing a mold or an optical element provided with a fine surface roughness for anti-reflection or for diffusing, may include placing a substrate or a film made of a semiconductor or a metal into a reacting etching apparatus, introducing a mixed gas of sulfur hexafluoride and oxygen into the etching apparatus with the substrate or the film, tuning the mixed gas into plasma such that oxides are made to be scattered on a surface of the substrate or the film, and etching the surface of the substrate of the film by the sulfur hexafluoride while the oxides function as an etching mask to form the fine surface roughness on the surface of the substrate or the film. Further, etching conditions may be determined such that the pitch of the fine surface roughness is made from 3 to 18 micrometers.
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公开(公告)号：US20150192702A1
公开(公告)日：2015-07-09
申请号：US14663746
申请日：2015-03-20
Applicant: NALUX CO., LTD.
Inventor： Kazuya YAMAMOTO , Takeshi YAMAMOTO
CPC classification number: G02B5/0294 , B29C33/424 , B29C33/56 , C23F4/00 , G02B1/118 , H01L21/02071 , H01L21/32132 , H01L21/32137 , Y10T428/24355
Abstract: A method for manufacturing a mold or an optical element provided with a fine surface roughness according to an embodiment of the present invention is a method in which the fine surface roughness has been manufactured using a reactive etching apparatus. In the apparatus a substrate or a film made of a semiconductor or a metal which reacts with sulfur hexafluoride is placed, and into which a mixed gas of sulfur hexafluoride and oxygen is introduced and tuned into plasma such that oxides are made to be scattered on a surface of the substrate or the film, the surface of the substrate or the film is made to undergo etching by the sulfur hexafluoride while the oxides function as an etching mask, and thus the fine surface roughness is formed on the surface of the substrate or the film.
Abstract translation: 根据本发明的实施方式的具有微细表面粗糙度的模具或光学元件的制造方法是使用反应性蚀刻装置制造微细表面粗糙度的方法。 在该设备中，放置由与六氟化硫反应的半导体或金属制成的衬底或膜，并且将六氟化硫和氧气的混合气体引入其中并将其调谐到等离子体中，使得氧化物散布在 基板或膜的表面，基板或膜的表面被六氟化硫蚀刻，同时氧化物用作蚀刻掩模，因此在基板的表面上形成微细的表面粗糙度 电影。
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公开(公告)号：US20180154556A1
公开(公告)日：2018-06-07
申请号：US15881936
申请日：2018-01-29
Applicant: NALUX CO., LTD.
Inventor： Kazuya YAMAMOTO , Takeshi YAMAMOTO
CPC classification number: B29C33/3842 , B29C33/42 , B29C33/424 , B29K2905/08 , C25D1/10 , C25D3/12 , G02B1/118 , G02B5/0221 , G02B5/0268 , G02B5/0294 , H01J37/32412 , H01J2237/334
Abstract: A method for manufacturing a mold according to the first aspect of the present invention includes the steps of: placing a base material of semiconductor or metal that reacts with sulfur hexafluoride in a reactive ion etching apparatus; supplying a mixed gas of sulfur hexafluoride and oxygen thereto; making the base material undergo a plasma dry-etching process such that oxides are scattered on a surface of the base material, etching advances on the surface of the base material while the oxides function as etching masks, and thereby a fine surface roughness is formed on the surface of the base material; and irradiating the fine surface roughness with an ion beam such that shapes of protrusions of the fine surface roughness can be adjusted.
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