Conductive paste and method for producing a semiconductor device using the same
    1.
    发明授权
    Conductive paste and method for producing a semiconductor device using the same 有权
    导电浆料及其制造方法

    公开(公告)号:US09540275B2

    公开(公告)日:2017-01-10

    申请号:US15110575

    申请日:2015-01-15

    摘要: A conductive paste including (A) conductive particles, (B) a glass frit containing substantially no lead, arsenic, tellurium, and antimony, and (C) a solvent. The glass frit (B) has a remelting temperature of 320 to 360° C., wherein the remelting temperature is indicated by a peak top of at least one endothermic peak having an endotherm of 20 J/g or more in a DSC curve as measured by a differential scanning calorimeter. The conductive paste can also include at least one metal oxide (D) selected from the group consisting of tin oxide, zinc oxide, indium oxide, and copper oxide. The glass frit (B) can further include (B-1) Ag2O, (B-2) V2O5, and (B-3) MoO3. The conductive paste can achieve binding at a relatively low temperature (such as 370° C. or lower) and maintains a bond strength at a relatively high temperature (such as 300 to 360° C.).

    摘要翻译: 包含(A)导电颗粒的导电浆料,(B)基本上不含铅,砷,碲和锑的玻璃料,和(C)溶剂。 玻璃料(B)的重熔温度为320〜360℃,其中重熔温度由DSC曲线中吸热峰值为20J / g以上的吸热峰的顶峰表示, 通过差示扫描量热计。 导电糊还可以包括选自氧化锡,氧化锌,氧化铟和氧化铜中的至少一种金属氧化物(D)。 玻璃料(B)还可以包括(B-1)Ag2O,(B-2)V2O5和(B-3)MoO3。 导电糊可以在相对较低的温度(如370℃或更低)下实现结合,并在相对较高的温度(如300至360℃)保持粘结强度。

    High performance, thermally conductive surface mount (die attach) adhesives

    公开(公告)号:US10590319B2

    公开(公告)日:2020-03-17

    申请号:US15746954

    申请日:2016-07-15

    摘要: A composition including (a) 20 to 85 wt % of a thermally conductive silver component containing silver nano-particles having a particle diameter of 5 to 500 nanometers; (b) a polyorgano-silsesquioxane component, the polyorganosilsesquioxane component selected from the group consisting of (i) 0.5 to 12 wt % of a polyorganosilsesquioxane fine powder, (ii) 0.5 to 8 wt % of a copolymer powder containing an interlacing polymer network of (I) a polyorganosilsesquioxane and (II) a polydiorganosiloxane; and (iii) 0.5 to 12 wt % of a combination of the polyorgano-silsesquioxane fine powder and the copolymer powder; and (c) 3 to 12 wt % of a total solvent content in the form of (i) one or more solvents, (ii) a vehicle containing one or more solvents, or (iii) a combination thereof.

    CONDUCTIVE PASTE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE SAME
    4.
    发明申请
    CONDUCTIVE PASTE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE USING THE SAME 有权
    用于制造使用该半导体器件的半导体器件的导电胶和方法

    公开(公告)号:US20160326044A1

    公开(公告)日:2016-11-10

    申请号:US15110575

    申请日:2015-01-15

    摘要: A conductive paste including (A) conductive particles, (B) a glass frit containing substantially no lead, arsenic, tellurium, and antimony, and (C) a solvent. The glass frit (B) has a remelting temperature of 320 to 360° C., wherein the remelting temperature is indicated by a peak top of at least one endothermic peak having an endotherm of 20 J/g or more in a DSC curve as measured by a differential scanning calorimeter. The conductive paste can also include at least one metal oxide (D) selected from the group consisting of tin oxide, zinc oxide, indium oxide, and copper oxide. The glass frit (B) can further include (B-1) Ag2O, (B-2) V2O5, and (B-3) MoO3. The conductive paste can achieve binding at a relatively low temperature (such as 370° C. or lower) and maintains a bond strength at a relatively high temperature (such as 300 to 360° C.).

    摘要翻译: 包含(A)导电颗粒的导电浆料,(B)基本上不含铅,砷,碲和锑的玻璃料,和(C)溶剂。 玻璃料(B)的重熔温度为320〜360℃,其中重熔温度由DSC曲线中吸热峰值为20J / g以上的吸热峰的顶峰表示, 通过差示扫描量热计。 导电糊还可以包括选自氧化锡,氧化锌,氧化铟和氧化铜中的至少一种金属氧化物(D)。 玻璃料(B)还可以包括(B-1)Ag2O,(B-2)V2O5和(B-3)MoO3。 导电糊可以在相对较低的温度(如370℃或更低)下实现结合,并在相对较高的温度(如300至360℃)保持粘结强度。