公开(公告)号：US10205091B2

公开(公告)日：2019-02-12

申请号：US15424515

申请日：2017-02-03

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jiamin Chen ,  Yuya Sakuraba ,  Jun Liu ,  Hiroaki Sukegawa ,  Kazuhiro Hono

IPC: H01L43/10 ,  H01F10/16 ,  H01F10/28 ,  H01F10/30 ,  H01L43/08 ,  H01L43/12 ,  H01F10/193 ,  H01F10/32

Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

公开(公告)号：US10749105B2

公开(公告)日：2020-08-18

申请号：US15939903

申请日：2018-03-29

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jiamin Chen ,  Yuya Sakuraba ,  Jun Liu ,  Hiroaki Sukegawa ,  Kazuhiro Hono

IPC: H01L43/10 ,  H01F10/16 ,  H01F10/28 ,  H01F10/30 ,  H01L43/08 ,  H01L43/12 ,  H01F10/193 ,  H01F10/32

Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.