公开(公告)号：US09893260B2

公开(公告)日：2018-02-13

申请号：US14947422

申请日：2015-11-20

Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yohei Kinoshita ,  Yuya Sakuraba ,  Taisuke Sasaki ,  Kazuhiro Hono

IPC: H01L37/00 ,  H01L35/20 ,  C22C38/00

CPC classification number: H01L35/20 ,  C22C38/00 ,  C22C2202/00

Abstract: Provided is a thermoelectric material which can increase its anomalous Nernst angle. The thermoelectric material of a magnetic material for a thermoelectric power generation device employs the anomalous Nernst effect, including iron doped with iridium.

公开(公告)号：US11521645B2

公开(公告)日：2022-12-06

申请号：US17295124

申请日：2019-06-27

Applicant: National Institute for Materials Science

Inventor： Kresna Bondan Fathoni ,  Yuya Sakuraba ,  Taisuke Sasaki ,  Tomoya Nakatani ,  Yoshio Miura ,  Kazuhiro Hono

IPC: G11B5/39 ,  H01L43/02 ,  G01R33/09 ,  H01L43/08 ,  H01L43/10

Abstract: The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device. The magnetoresistive element comprises a magnetoresistive film including a pair of body centered cubic (bcc) crystal structure CoFe ferromagnetic layers with a (001) crystal orientation, the pair of layers separated by a non-magnetic layer of Cu with bcc crystal structure.

公开(公告)号：US10205091B2

公开(公告)日：2019-02-12

申请号：US15424515

申请日：2017-02-03

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jiamin Chen ,  Yuya Sakuraba ,  Jun Liu ,  Hiroaki Sukegawa ,  Kazuhiro Hono

IPC: H01L43/10 ,  H01F10/16 ,  H01F10/28 ,  H01F10/30 ,  H01L43/08 ,  H01L43/12 ,  H01F10/193 ,  H01F10/32

Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

公开(公告)号：US11889762B2

公开(公告)日：2024-01-30

申请号：US17801061

申请日：2021-03-12

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yuya Sakuraba ,  Weinan Zhou ,  Kenichi Uchida ,  Kaoru Yamamoto

IPC: H10N10/17 ,  H10N52/80

CPC classification number: H10N10/17 ,  H10N52/80

Abstract: The present disclosure provides: a magnetoresistive element having a large magnetoresistance change ratio (MR ratio); and a magnetic sensor, a reproducing head and a magnetic recording and reproducing device.

公开(公告)号：US20230102920A1

公开(公告)日：2023-03-30

申请号：US17801061

申请日：2021-03-12

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Yuya Sakuraba ,  Weinan Zhou ,  Kenichi Uchida ,  Kaoru Yamamoto

IPC: H01L35/30

Abstract: Provided is a novel thermoelectric conversion element with which the thermoelectric power generated in a direction orthogonal to both a temperature gradient and the magnetization can be increased without changing the thermoelectric conversion characteristic of a magnetic material. The present invention is provided with: thermoelectric layer 10 comprising a thermoelectric material exhibiting the Seebeck effect; magnetic body layer 20 stacked on thermoelectric layer 10, said magnetic body layer 20 being conductive and the magnetization or an external magnetic field thereof being oriented in the thickness direction of magnetic body layer 20; low-temperature-side conductor part 44 connecting low-temperature-side end portion 12 of thermoelectric layer 10 and low-temperature-side end portion 22 of magnetic body layer 20; high-temperature-side conductor part 42 connecting high-temperature-side end portion 14 of thermoelectric layer 10 and high-temperature-side end portion 24 of magnetic body layer 20; and output terminals (26a, 26b) for extracting a potential generated in the vector product direction of temperature gradient direction (∇T) of thermoelectric layer 10 and magnetization direction (M) of magnetic body layer 20.

公开(公告)号：US10749105B2

公开(公告)日：2020-08-18

申请号：US15939903

申请日：2018-03-29

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jiamin Chen ,  Yuya Sakuraba ,  Jun Liu ,  Hiroaki Sukegawa ,  Kazuhiro Hono

IPC: H01L43/10 ,  H01F10/16 ,  H01F10/28 ,  H01F10/30 ,  H01L43/08 ,  H01L43/12 ,  H01F10/193 ,  H01F10/32

Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.