公开(公告)号：US10395809B2

公开(公告)日：2019-08-27

申请号：US15591348

申请日：2017-05-10

Applicant: Samsung Electronics Co., Ltd. ,  National Institute for Materials Science

Inventor： Shigeki Takahashi ,  Yoshiaki Sonobe ,  Hiroaki Sukegawa ,  Hwachol Lee ,  Kazuhiro Hono ,  Seiji Mitani ,  Jun Liu

IPC: H01F10/12 ,  H01F10/06 ,  H01F10/26 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01F10/30 ,  H01F10/32

Abstract: Embodiments of the inventive concepts provide a flat perpendicular magnetic layer having a low saturation magnetization and a perpendicular magnetization-type tunnel magnetoresistive element using the same. The perpendicular magnetic layer is a nitrogen-poor (Mn1−xGax)Ny layer (0

公开(公告)号：US09842636B2

公开(公告)日：2017-12-12

申请号：US15134514

申请日：2016-04-21

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  SAMSUNG ELECTRONICS COMPANY LIMITED

Inventor： Hiroaki Sukegawa ,  Hwachol Lee ,  Kazuhiro Hono ,  Seiji Mitani ,  Tadakatsu Ohkubo ,  Jun Liu ,  Shinya Kasai ,  Kwangseok Kim

IPC: G11C11/16 ,  H01F10/193 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: G11C11/161 ,  H01F10/1933 ,  H01F10/3286 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Provided is a structure having a perpendicular magnetization film which is an (Mn1-xGax)4N1-y (0

公开(公告)号：US10205091B2

公开(公告)日：2019-02-12

申请号：US15424515

申请日：2017-02-03

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jiamin Chen ,  Yuya Sakuraba ,  Jun Liu ,  Hiroaki Sukegawa ,  Kazuhiro Hono

IPC: H01L43/10 ,  H01F10/16 ,  H01F10/28 ,  H01F10/30 ,  H01L43/08 ,  H01L43/12 ,  H01F10/193 ,  H01F10/32

Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.

公开(公告)号：US10749105B2

公开(公告)日：2020-08-18

申请号：US15939903

申请日：2018-03-29

Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCE

Inventor： Jiamin Chen ,  Yuya Sakuraba ,  Jun Liu ,  Hiroaki Sukegawa ,  Kazuhiro Hono

IPC: H01L43/10 ,  H01F10/16 ,  H01F10/28 ,  H01F10/30 ,  H01L43/08 ,  H01L43/12 ,  H01F10/193 ,  H01F10/32

Abstract: To provide a key monocrystalline magnetoresistance element necessary for accomplishing mass production and cost reduction for applying a monocrystalline giant magnetoresistance element using a Heusler alloy to practical devices. A monocrystalline magnetoresistance element of the present invention includes a silicon substrate 11, a base layer 12 having a B2 structure laminated on the silicon substrate 11, a first non-magnetic layer 13 laminated on the base layer 12 having a B2 structure, and a giant magnetoresistance effect layer 17 having at least one laminate layer including a lower ferromagnetic layer 14, an upper ferromagnetic layer 16, and a second non-magnetic layer 15 disposed between the lower ferromagnetic layer 14 and the upper ferromagnetic layer 16.