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公开(公告)号:US11968902B2
公开(公告)日:2024-04-23
申请号:US17276464
申请日:2019-11-26
Inventor: Masato Uehara , Hiroshi Yamada , Morito Akiyama , Sri Ayu Anggraini , Kenji Hirata
CPC classification number: H10N30/302 , B81B3/0018 , H10N30/50 , H10N30/80 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264
Abstract: There are provided a piezoelectric body of ytterbium-doped aluminum nitride, having a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium, and a MEMS device using the piezoelectric body. The piezoelectric body is represented by a chemical formula Al1-xYbxN where a value of x is more than 0 and less than 0.37 and having a lattice constant ratio c/a in a range of 1.53 or more and less than 1.6. The piezoelectric body with such a configuration has a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium.
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公开(公告)号:US11999615B2
公开(公告)日:2024-06-04
申请号:US17415691
申请日:2019-12-27
Inventor: Kenji Hirata , Hiroshi Yamada , Masato Uehara , Sri Ayu Anggraini , Morito Akiyama
CPC classification number: C01B21/0602 , H10N30/20 , H10N30/85
Abstract: An object is to provide a piezoelectric body having a value indicating a higher performance index (d33, e33, C33, g33, and/or k2) than aluminum nitride not doped with any element. The piezoelectric body is represented by a chemical formula Al1-X-YMgXMYN where X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1.
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