Piezoelectric Element Application Device
    1.
    发明公开

    公开(公告)号:US20240306511A1

    公开(公告)日:2024-09-12

    申请号:US18596872

    申请日:2024-03-06

    摘要: A piezoelectric element application device according to the disclosure includes: a vibration plate made of silicon oxide; a first electrode formed above the vibration plate; a seed layer formed above the first electrode and the vibration plate; a piezoelectric layer formed at the seed layer and containing potassium, sodium, and niobium; and a second electrode formed at the piezoelectric layer. The vibration plate further contains potassium and sodium. In secondary ion mass spectrometry on the vibration plate and the piezoelectric layer, an intensity of potassium in the vibration plate is lower than an intensity of potassium in the piezoelectric layer, and an intensity of sodium in the vibration plate is lower than an intensity of sodium in the piezoelectric layer.

    METERING SYSTEM
    3.
    发明公开
    METERING SYSTEM 审中-公开

    公开(公告)号:US20240271979A1

    公开(公告)日:2024-08-15

    申请号:US18562677

    申请日:2022-05-31

    IPC分类号: G01F11/34 G01F15/00 H10N30/20

    摘要: The invention relates to a metering system (1) with a housing (2), a piezo actuator (10) located therein, a fluidic unit (15) with a valve (16), a plunger device (40) for closing the valve (16), and a transmission lever (20) for coupling the piezo actuator (10) to the plunger device (40), wherein the piezo actuator (10) is arranged substantially parallel next to the plunger device (40) in the housing (2), wherein the piezo actuator (10) extends away from the transmission lever (20) substantially in the direction of a side facing the valve (16).

    Piezoelectric Element And Piezoelectric Actuator

    公开(公告)号:US20240173976A1

    公开(公告)日:2024-05-30

    申请号:US18517015

    申请日:2023-11-22

    IPC分类号: B41J2/14 H10N30/20

    CPC分类号: B41J2/14233 H10N30/20

    摘要: A piezoelectric element includes a substrate, a first electrode, a thin-film piezoelectric body containing potassium, sodium, and niobium, and a second electrode. When the thin-film piezoelectric body is divided into two equal parts in a film formation direction, a first electrode side is defined as a first region, and a second electrode side is defined as a second region, a value A obtained by dividing a total value of an XRD peak intensity of a (111) plane and an XRD peak intensity of a (011) plane in the first region by a total value of an XRD peak intensity of a (100) plane, the XRD peak intensity of the (111) plane, and the XRD peak intensity of the (011) plane is smaller than a value B obtained by dividing a total value of an XRD peak intensity of a (111) plane and an XRD peak intensity of a (011) plane in the thin-film piezoelectric body by a total value of an XRD peak intensity of a (100) plane, the XRD peak intensity of the (111) plane, and the XRD peak intensity of the (011) plane.