公开(公告)号：US20240101423A1

公开(公告)日：2024-03-28

申请号：US18264362

申请日：2021-11-24

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Sri Ayu Anggraini ,  Morito AKIYAMA ,  Masato UEHARA ,  Hiroshi YAMADA ,  Kenji HIRATA

IPC: C01B21/06 ,  C23C14/06 ,  H10N30/00 ,  H10N30/50 ,  H10N30/853

CPC classification number: C01B21/0602 ,  C23C14/0641 ,  H10N30/10516 ,  H10N30/50 ,  H10N30/853 ,  C01P2002/52 ,  C01P2006/40 ,  C23C14/3464

Abstract: Provided is a scandium-doped aluminum nitride with nitrogen polarity. The nitride material is represented by the chemical formula ScXMYAl1-X-YN. M is at least one or more elements among C, Si, Ge, and Sn, X is greater than 0 and not greater than 0.4, Y is greater than 0 and not greater than 0.2, and X/Y is less than or equal to 5. The nitride material has piezoelectricity with a polarization direction of nitrogen polarity opposite to the direction of thin film growth.

公开(公告)号：US11968902B2

公开(公告)日：2024-04-23

申请号：US17276464

申请日：2019-11-26

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Masato Uehara ,  Hiroshi Yamada ,  Morito Akiyama ,  Sri Ayu Anggraini ,  Kenji Hirata

IPC: H01L41/18 ,  B81B3/00 ,  H10N30/30 ,  H10N30/50 ,  H10N30/80

CPC classification number: H10N30/302 ,  B81B3/0018 ,  H10N30/50 ,  H10N30/80 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264

Abstract: There are provided a piezoelectric body of ytterbium-doped aluminum nitride, having a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium, and a MEMS device using the piezoelectric body. The piezoelectric body is represented by a chemical formula Al1-xYbxN where a value of x is more than 0 and less than 0.37 and having a lattice constant ratio c/a in a range of 1.53 or more and less than 1.6. The piezoelectric body with such a configuration has a greater piezoelectric coefficient d33 or g33 than those not doped with ytterbium.

公开(公告)号：US11999615B2

公开(公告)日：2024-06-04

申请号：US17415691

申请日：2019-12-27

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Kenji Hirata ,  Hiroshi Yamada ,  Masato Uehara ,  Sri Ayu Anggraini ,  Morito Akiyama

IPC: C01B21/06 ,  H10N30/20 ,  H10N30/85

CPC classification number: C01B21/0602 ,  H10N30/20 ,  H10N30/85

Abstract: An object is to provide a piezoelectric body having a value indicating a higher performance index (d33, e33, C33, g33, and/or k2) than aluminum nitride not doped with any element. The piezoelectric body is represented by a chemical formula Al1-X-YMgXMYN where X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1.

公开(公告)号：US20220274886A1

公开(公告)日：2022-09-01

申请号：US17634224

申请日：2020-06-04

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Sri Ayu Anggraini ,  Morito AKIYAMA ,  Masato UEHARA ,  Hiroshi YAMADA ,  Kenji HIRATA

IPC: C04B35/581 ,  H01L41/08 ,  H01L41/09

Abstract: Provide are a nitride piezoelectric body having a value indicating a performance index (at least any one of d33, g33, and K2) higher than that of aluminum nitride not doped with any element, and a MEMS device using the same. The nitride piezoelectric body is a piezoelectric body represented by chemical formula Al1-X-YMgXTaYN, wherein X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1, and Ta includes tetravalent tantalum.