公开(公告)号：US20190019766A1

公开(公告)日：2019-01-17

申请号：US15750614

申请日：2016-08-03

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yohei Hori ,  Yongxun Liu ,  Shinichi Ouchi ,  Tetsuji Yasuda ,  Meishoku Masahara ,  Toshifumi Irisawa ,  Kazuhiko Endo ,  Hiroyuki Ota ,  Tatsuro Maeda ,  Hanpei Koike ,  Yasuhiro Ogasahara ,  Toshihiro Katashita ,  Koichi Fukuda

IPC: H01L23/00 ,  H01L25/065 ,  H01L23/522

Abstract: A semiconductor device 100 of the present invention includes a front end and back ends A and B, each including a plurality of layers. Further, in the plurality of layers of the back end B, (i) circuits 22, 23, and 24 having a security function are provided in at least one layer having a wiring pitch of 100 nm or more, (ii) a circuit having a security function is provided in at least one wiring layer in M5 or higher level (M5, M6, M7, . . . ), (iii) a circuit having a security function is provided in at least one layer, for which immersion ArF exposure does not need to be used, or (iv) a circuit having a security function is provided in at least one layer that is exposed by using an exposure wavelength of 200 nm or more.