公开(公告)号：US20190019766A1

公开(公告)日：2019-01-17

申请号：US15750614

申请日：2016-08-03

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yohei Hori ,  Yongxun Liu ,  Shinichi Ouchi ,  Tetsuji Yasuda ,  Meishoku Masahara ,  Toshifumi Irisawa ,  Kazuhiko Endo ,  Hiroyuki Ota ,  Tatsuro Maeda ,  Hanpei Koike ,  Yasuhiro Ogasahara ,  Toshihiro Katashita ,  Koichi Fukuda

IPC: H01L23/00 ,  H01L25/065 ,  H01L23/522

Abstract: A semiconductor device 100 of the present invention includes a front end and back ends A and B, each including a plurality of layers. Further, in the plurality of layers of the back end B, (i) circuits 22, 23, and 24 having a security function are provided in at least one layer having a wiring pitch of 100 nm or more, (ii) a circuit having a security function is provided in at least one wiring layer in M5 or higher level (M5, M6, M7, . . . ), (iii) a circuit having a security function is provided in at least one layer, for which immersion ArF exposure does not need to be used, or (iv) a circuit having a security function is provided in at least one layer that is exposed by using an exposure wavelength of 200 nm or more.

公开(公告)号：US20140288898A1

公开(公告)日：2014-09-25

申请号：US14036605

申请日：2013-09-25

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Koichi Fukuda

IPC: G06F17/50

CPC classification number: G06F17/5036

Abstract: A tunnel path of the tunnel FET at a source-gate overlap portion is divided into a vertical path vertical to the source-gate overlap portion and a horizontal path extending to a drain in a horizontal direction along a channel interface. A tunnel distance computation section obtains a tunnel distance for each position of a nonlocal electric field band-to-band tunnel, using first and second bends of the mid-gap potential, which are previously stored approximate functions of the mid-gap potential on the vertical and horizontal paths, respectively. A carrier generation rate computation section computes a carrier generation rate due to band-to-band tunneling, based on the tunnel distance at each position of the nonlocal electric field band-to-band tunnel and a band gap.

Abstract translation: 源极 - 栅极重叠部分处的隧道FET的隧道路径被划分成垂直于源极 - 栅极重叠部分的垂直路径和沿着沟道界面延伸到水平方向的漏极的水平路径。 隧道距离计算部分使用中间间隙电位的第一和第二弯曲来获得非本地电场带对带隧道的每个位置的隧道距离，这是先前存储的中间间隙电位的近似函数 垂直和水平路径。 载波生成速率计算部，基于非局部带电带通道的各个位置的隧道距离和带隙，计算由频带隧穿引起的载波生成率。

公开(公告)号：US09698235B2

公开(公告)日：2017-07-04

申请号：US15031110

申请日：2014-08-12

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shinji Migita ,  Hiroyuki Ota ,  Koichi Fukuda

IPC: H01L21/02 ,  H01L29/51 ,  H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20

CPC classification number: H01L29/513 ,  H01L21/02197 ,  H01L21/02266 ,  H01L29/0649 ,  H01L29/0669 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/78 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: The present invention provides a field-effect transistor having an accumulation-layer-operation type field-effect transistor that includes a semiconductor layer in which a source region, a channel region, and a drain region that have either an N-type or P-type conductivity in common are formed, and a gate electrode disposed adjacent to the channel region via a gate insulating film, wherein the gate insulating film is made of a dielectric having a change gradient of a relative dielectric constant in which the relative dielectric constant changes to decrease according to the magnitude of a gate voltage applied to the gate electrode.