公开(公告)号：US20190019766A1

公开(公告)日：2019-01-17

申请号：US15750614

申请日：2016-08-03

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Yohei Hori ,  Yongxun Liu ,  Shinichi Ouchi ,  Tetsuji Yasuda ,  Meishoku Masahara ,  Toshifumi Irisawa ,  Kazuhiko Endo ,  Hiroyuki Ota ,  Tatsuro Maeda ,  Hanpei Koike ,  Yasuhiro Ogasahara ,  Toshihiro Katashita ,  Koichi Fukuda

IPC: H01L23/00 ,  H01L25/065 ,  H01L23/522

Abstract: A semiconductor device 100 of the present invention includes a front end and back ends A and B, each including a plurality of layers. Further, in the plurality of layers of the back end B, (i) circuits 22, 23, and 24 having a security function are provided in at least one layer having a wiring pitch of 100 nm or more, (ii) a circuit having a security function is provided in at least one wiring layer in M5 or higher level (M5, M6, M7, . . . ), (iii) a circuit having a security function is provided in at least one layer, for which immersion ArF exposure does not need to be used, or (iv) a circuit having a security function is provided in at least one layer that is exposed by using an exposure wavelength of 200 nm or more.

公开(公告)号：US09184240B2

公开(公告)日：2015-11-10

申请号：US14099425

申请日：2013-12-06

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Masahiko Hata ,  Osamu Ichikawa ,  Yuji Urabe ,  Noriyuki Miyata ,  Tatsuro Maeda ,  Tetsuji Yasuda

IPC: H01L21/02 ,  H01L29/20 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66

CPC classification number: H01L29/20 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/0237 ,  H01L21/02392 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/28264 ,  H01L29/517 ,  H01L29/66522

Abstract: There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include H2SeO3. The cleansing agent may further contain one or more substances selected from the group consisting of water, ammonium, and ethanol. When the surface of the compound semiconductor layer is made of InxGa1-xAs (0≦x≦1), the insulating layer is preferably made of Al2O3, and Al2O3 is preferably formed by ALD.

Abstract translation: 提供一种制造半导体晶片的方法，包括：通过外延生长在基底晶片上形成化合物半导体层; 通过含有硒化合物的清洁剂清洁化合物半导体层的表面; 以及在所述化合物半导体层的表面上形成绝缘层。 硒化合物的实例包括氧化硒。 硒氧化物的实例包括H 2 SeO 3。 清洁剂还可以含有一种或多种选自水，铵和乙醇的物质。 当化合物半导体层的表面由In x Ga 1-x As（0＆nlE; x＆nlE; 1）制成时，绝缘层优选由Al 2 O 3制成，Al 2 O 3优选由ALD形成。

公开(公告)号：US20140091433A1

公开(公告)日：2014-04-03

申请号：US14099425

申请日：2013-12-06

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Masahiko HATA ,  Osamu Ichikawa ,  Yuji Urabe ,  Noriyuki Miyata ,  Tatsuro Maeda ,  Tetsuji Yasuda

IPC: H01L29/20 ,  H01L21/02

CPC classification number: H01L29/20 ,  H01L21/0206 ,  H01L21/02178 ,  H01L21/0237 ,  H01L21/02392 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/28264 ,  H01L29/517 ,  H01L29/66522

Abstract: There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include H2SeO3. The cleansing agent may further contain one or more substances selected from the group consisting of water, ammonium, and ethanol. When the surface of the compound semiconductor layer is made of InxGa1-xAs (0≦x≦1), the insulating layer is preferably made of Al2O3, and Al2O3 is preferably formed by ALD.

Abstract translation: 提供一种制造半导体晶片的方法，包括：通过外延生长在基底晶片上形成化合物半导体层; 通过含有硒化合物的清洁剂清洁化合物半导体层的表面; 以及在所述化合物半导体层的表面上形成绝缘层。 硒化合物的实例包括氧化硒。 硒氧化物的实例包括H 2 SeO 3。 清洁剂还可以含有一种或多种选自水，铵和乙醇的物质。 当化合物半导体层的表面由In x Ga 1-x As（0＆nlE; x＆nlE; 1）制成时，绝缘层优选由Al 2 O 3制成，Al 2 O 3优选由ALD形成。

公开(公告)号：US08901656B2

公开(公告)日：2014-12-02

申请号：US14015775

申请日：2013-08-30

Applicant: Sumitomo Chemical Company, Limited ,  The University of Tokyo ,  National Institute of Advanced Industrial Science and Technology

Inventor： Takeshi Aoki ,  Hisashi Yamada ,  Noboru Fukuhara ,  Masahiko Hata ,  Masafumi Yokoyama ,  SangHyeon Kim ,  Mitsuru Takenaka ,  Shinichi Takagi ,  Tetsuji Yasuda

IPC: H01L27/12 ,  H01L21/20 ,  H01L29/78 ,  H01L29/66 ,  H01L21/762 ,  H01L29/786 ,  H01L29/778 ,  H01L29/20 ,  H01L29/51

CPC classification number: H01L29/78681 ,  H01L21/2007 ,  H01L21/76254 ,  H01L21/76256 ,  H01L29/2003 ,  H01L29/517 ,  H01L29/6631 ,  H01L29/66462 ,  H01L29/66742 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7786 ,  H01L29/78

Abstract: Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity Ea1 of the first crystal layer is larger than the electron affinity Ea2 of the second crystal layer.

Abstract translation: 提供了包括基底晶片，第一绝缘层和半导体层的半导体晶片。 这里，基底晶片，第一绝缘层和半导体层按照基底晶片，第一绝缘层和半导体层的顺序排列，第一绝缘层由非晶金属氧化物或非晶态金属氮化物构成， 半导体层包括第一晶体层和第二晶体层，第一晶体层和第二晶体层以第一晶体层和第二晶体层的顺序排列成第一晶体层和第二晶体层的顺序 并且第一晶体层的电子亲和力Ea1大于第二晶体层的电子亲和力Ea2。