公开(公告)号：US20180006130A1

公开(公告)日：2018-01-04

申请号：US15690054

申请日：2017-08-29

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Shigeki SAKAI ,  Wei ZHANG ,  Mitsue TAKAHASHI

IPC: H01L29/51 ,  H01L29/49 ,  H01L21/324 ,  H01L21/28 ,  H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/516 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/28194 ,  H01L21/28291 ,  H01L21/324 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6684 ,  H01L29/78391

Abstract: Provided is a ferroelectric field effect transistor (FeFET) which has a wide memory window even if the ferroelectric film thickness is 200 nm or less, and which has excellent data retention characteristics, pulse rewriting endurance and the like. An FeFET which has a structure wherein an insulating body (11) and a gate electrode conductor (4) are sequentially laminated in this order on a semiconductor base (10) that has a source region (12) and a drain region (13). The insulating body (11) is configured by laminating a first insulating body (1) and a second insulating body (2) in this order on the base (10), and the second insulating body (2) is mainly composed of an oxide of strontium, calcium, bismuth and tantalum.