-
公开(公告)号:US11951583B2
公开(公告)日:2024-04-09
申请号:US17462048
申请日:2021-08-31
申请人: NGK INSULATORS, LTD.
IPC分类号: B23Q3/15 , B23K1/00 , B23K1/19 , B23K103/00 , H01L21/683 , H01L21/687
CPC分类号: B23Q3/15 , B23K1/0016 , B23K1/19 , H01L21/6833 , H01L21/68757 , B23K2103/52
摘要: An electrostatic chuck includes a ceramic base, a ceramic dielectric layer, an electrostatic electrode, and a ceramic insulating layer. The ceramic dielectric layer is positioned on the ceramic base and is thinner than the ceramic base. The electrostatic electrode is embedded between the ceramic dielectric layer and the ceramic base. The ceramic insulating layer is positioned on the ceramic dielectric layer and is thinner than the ceramic dielectric layer. The ceramic insulating layer has a higher volume resistivity and withstand voltage than the ceramic dielectric layer, and the ceramic dielectric layer has a higher dielectric constant than the ceramic insulating layer.
-
公开(公告)号:US11610798B2
公开(公告)日:2023-03-21
申请号:US16856224
申请日:2020-04-23
申请人: NGK INSULATORS, LTD.
发明人: Tatsuya Kuno , Ikuhisa Morioka , Kenichiro Aikawa
IPC分类号: H01L21/683 , H01J37/32 , H01L21/67
摘要: An electrostatic chuck assembly includes a ceramic body having a wafer placement surface that is a circular surface, and an F/R placement surface that is formed around the wafer placement surface and is positioned at a lower level than the wafer placement surface, a wafer attraction electrode embedded inside the ceramic body and positioned in a facing relation to the wafer placement surface, an F/R attraction electrode embedded inside the ceramic body and positioned in a facing relation to the F/R placement surface, a concave-convex region formed in the F/R placement surface to hold gas, a focus ring placed on the F/R placement surface, and a pair of elastic annular sealing members arranged between the F/R placement surface and the focus ring on the inner peripheral side and the outer peripheral side of the F/R placement surface, and surrounding the concave-convex region in a sandwiching relation.
-
公开(公告)号:US09202718B2
公开(公告)日:2015-12-01
申请号:US13864467
申请日:2013-04-17
申请人: NGK INSULATORS, LTD.
发明人: Kenichiro Aikawa , Morimichi Watanabe , Asumi Jindo , Yuji Katsuda , Yosuke Sato , Yoshinori Isoda
IPC分类号: H01L21/683 , H01L21/67 , C04B35/581 , H05B1/00 , B32B18/00 , H05B3/28 , C04B35/58 , C04B35/626 , C04B35/645 , C04B37/00 , C23C14/34
CPC分类号: H01L21/67 , B32B18/00 , C04B35/58 , C04B35/581 , C04B35/6261 , C04B35/62655 , C04B35/645 , C04B37/001 , C04B37/003 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3225 , C04B2235/3865 , C04B2235/5445 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C04B2237/08 , C04B2237/34 , C04B2237/343 , C04B2237/36 , C04B2237/366 , C04B2237/58 , C04B2237/704 , C04B2237/708 , C04B2237/72 , C23C14/3414 , H01L21/6831 , H05B1/00 , H05B3/283 , Y10T428/24942
摘要: An electrostatic chuck 1A includes a susceptor 11A having an adsorption face 11a of adsorbing a semiconductor, and an electrostatic chuck electrode 4 embedded in the susceptor. The susceptor 11A includes a plate shaped main body 3 and a surface corrosion resistant layer 2 including the adsorption face 2. The surface corrosion resistant layer 2 is made of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising magnesium-aluminum oxynitride phase exhibiting an XRD peak at least in 2θ=47 to 50° by CuKα X-ray.
摘要翻译: 静电吸盘1A包括具有吸附半导体的吸附面11a的基座11A和嵌入基座的静电卡盘电极4。 基座11A包括板状主体3和包括吸附面2的表面耐腐蚀层2.表面耐腐蚀层2由以镁,铝,氧和氮为主要成分的陶瓷材料制成。 陶瓷材料包括主相,其包含镁 - 铝氧氮化物相,其表现出至少2%的XRD峰;通过CuKαX射线显示47至50°。
-
公开(公告)号:US11948825B2
公开(公告)日:2024-04-02
申请号:US17465943
申请日:2021-09-03
申请人: NGK INSULATORS, LTD.
IPC分类号: H01L21/683
CPC分类号: H01L21/6833
摘要: A wafer placement table includes: an electrostatic chuck that is a ceramic sintered body in which an electrode for electrostatic adsorption is embedded; a cooling member which is bonded to a surface on an opposite side of a wafer placement surface of the electrostatic chuck, and cools the electrostatic chuck; a hole for power supply terminal, the hole penetrating the cooling member in a thickness direction; and a power supply terminal which is bonded to the electrode for electrostatic adsorption from the surface on the opposite side of the wafer placement surface of the electrostatic chuck, and is inserted in the hole for power supply terminal. The outer peripheral surface of a portion of the power supply terminal is covered with an insulating thin film that is formed by coating of an insulating material, the portion being inserted in the hole for power supply terminal.
-
公开(公告)号:US11837490B2
公开(公告)日:2023-12-05
申请号:US17224183
申请日:2021-04-07
申请人: NGK INSULATORS, LTD.
IPC分类号: H01L21/683 , H01L21/67 , H05B3/03 , H05B3/18
CPC分类号: H01L21/6833 , H01L21/67103 , H05B3/03 , H05B3/18
摘要: An electrostatic chuck heater according to the present invention includes an alumina substrate having a wafer placement surface on its upper surface; an electrostatic electrode, a resistance heating element provided for each zone, and a multilayer jumper wire for supplying power to the resistance heating element, which are buried in the alumina substrate in this order from the wafer placement surface side; a heating element coupling via for vertically coupling the resistance heating element to the jumper wire; and a power supply via extending outward for supplying power to the jumper wire. At least the heating element coupling via and the power supply via contain ruthenium metal.
-
公开(公告)号:US12108499B2
公开(公告)日:2024-10-01
申请号:US17452805
申请日:2021-10-29
申请人: NGK INSULATORS, LTD.
CPC分类号: H05B3/06 , H05B3/18 , H05B3/283 , H05B2203/017
摘要: A ceramic heater with a shaft includes: a ceramic plate in which a resistance heating element is embedded; a hollow ceramic shaft having an upper end bonded to a surface on an opposite side of a wafer placement surface of the ceramic plate; and a shaft heater embedded in a side wall near an upper end of the ceramic shaft.
-
公开(公告)号:US12027385B2
公开(公告)日:2024-07-02
申请号:US17222164
申请日:2021-04-05
申请人: NGK INSULATORS, LTD.
IPC分类号: H01L21/67 , H01L21/683 , H05B3/12 , H05B3/26
CPC分类号: H01L21/67103 , H01L21/6833 , H05B3/12 , H05B3/265 , H05B2203/016
摘要: The ceramic heater of the present invention includes: an alumina substrate having a wafer placement surface; resistance heating elements disposed in respective zones; multistage jumpers that supply electric power to the resistance heating elements, the resistance heating elements and the jumpers being embedded in the alumina substrate in this order from a wafer placement surface side; heating element connecting vias that vertically connect the resistance heating elements to the jumpers; and power supply vias exposed to the outside in order to supply electric power to the jumpers. The specific resistance of the heating element connecting vias is smaller than that of the resistance heating elements, and the absolute value of the difference between CTE of the heating element connecting vias and CTE of the alumina substrate is smaller than the absolute value of the difference between CTE of the resistance heating elements and CTE of the alumina substrate.
-
公开(公告)号:US12087613B2
公开(公告)日:2024-09-10
申请号:US17643600
申请日:2021-12-10
申请人: NGK INSULATORS, LTD.
IPC分类号: B23Q3/15 , C23C4/02 , C23C4/134 , H01L21/687
CPC分类号: H01L21/6875 , C23C4/02 , C23C4/134 , H01L21/68757
摘要: A wafer placement table is a ceramic sintered body with a surface provided with multiple projections that support a wafer. Of the surface of the ceramic sintered body, the area provided with no projection is a mirror surface which has a surface roughness Ra of 0.1 μm or less. The projections are formed of an aerosol deposition film or a thermal spray film made of the same material as for the ceramic sintered body.
-
公开(公告)号:US11282734B2
公开(公告)日:2022-03-22
申请号:US16717106
申请日:2019-12-17
申请人: NGK INSULATORS, LTD.
IPC分类号: H01L21/683 , B23Q3/15 , H01L21/67 , H02N13/00
摘要: An electrostatic chuck includes a first ceramic member disk-shaped and having an annular step surface outside a circular wafer holding surface thereof, the annular step surface being at a lower level than the wafer holding surface, the first ceramic member having a volume resistivity that allows Coulomb force to be exerted; a first electrode embedded in the first ceramic member at a position facing the wafer holding surface; a second electrode disposed on the annular step surface of the first ceramic member, the second electrode being independent of the first electrode; and a second ceramic member having an annular shape and configured to cover the annular step surface having the second electrode thereon, the second ceramic member having a volume resistivity that allows Johnsen-Rahbek force to be exerted, wherein an upper surface of the second ceramic member is a focus ring holding surface on which a focus ring is placed.
-
公开(公告)号:US09184081B2
公开(公告)日:2015-11-10
申请号:US13869285
申请日:2013-04-24
申请人: NGK INSULATORS, LTD.
发明人: Kenichiro Aikawa , Morimichi Watanabe , Asumi Jindo , Yuji Katsuda , Yosuke Sato , Yoshinori Isoda
IPC分类号: H01L21/683 , H01T23/00 , C04B35/581 , C04B35/58 , C04B35/626 , C04B35/645 , C23C14/34
CPC分类号: H01L21/6833 , C04B35/58 , C04B35/581 , C04B35/6261 , C04B35/62655 , C04B35/645 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3865 , C04B2235/3869 , C04B2235/5445 , C04B2235/762 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9669 , C23C14/3414
摘要: Each of electrostatic chucks 1A to 1F includes a susceptor 11A having an adsorption face 11a of adsorbing a semiconductor, and an electrostatic chuck electrode 4 embedded in the susceptor. The susceptor includes a plate shaped main body 3 and a surface corrosion resistant layer 2 including the adsorption face 2. The surface corrosion resistant layer 2 is made of a ceramic material comprising magnesium, aluminum, oxygen and nitrogen as main components. The ceramic material comprises a main phase comprising MgO—AlN solid solution wherein aluminum nitride is dissolved into magnesium oxide.
摘要翻译: 静电卡盘1A至1F中的每一个包括具有吸附半导体的吸附面11a的基座11A和嵌入基座的静电卡盘电极4。 基座包括板状主体3和包括吸附面2的表面耐腐蚀层2.表面耐腐蚀层2由以镁,铝,氧和氮为主要成分的陶瓷材料制成。 陶瓷材料包括其中氮化铝溶解在氧化镁中的MgO-AlN固溶体的主相。
-
-
-
-
-
-
-
-
-