公开(公告)号：US20150076550A1

公开(公告)日：2015-03-19

申请号：US14485299

申请日：2014-09-12

Applicant: Nichia Corporation

Inventor： Hidetoshi TANAKA

IPC: H01L33/38 ,  H01L33/62

CPC classification number: H01L33/38 ,  H01L33/62

Abstract: A light-emitting element includes a semiconductor portion, an upper electrode and a lower electrode. The upper electrode includes a plurality of first external connectors, a plurality of second external connectors, a first inward elongated portion extending from each of the first external connectors, a second inward elongated portion extending from each of the second external connectors, a first outward elongated portion extending from each of the first external connectors toward a side opposite to a side where the second external connectors are disposed, and connecting two first external connectors next to each other, and a second outward elongated portion extending from each of the second external connectors toward a side opposite to a side where the first external connectors are disposed, and connecting two second external connectors next to each other.

Abstract translation: 发光元件包括半导体部分，上电极和下电极。 上电极包括多个第一外部连接器，多个第二外部连接器，从每个第一外部连接器延伸的第一向内伸长部分，从每个第二外部连接器延伸的第二向内细长部分，第一向外伸长部分 从所述第一外部连接器中的每一个延伸到与所述第二外部连接器设置的一侧相对的一侧，以及将彼此相邻的两个第一外部连接器和从所述第二外部连接器中的每一个延伸的第二外部细长部分 与设置有第一外部连接器的一侧相对的一侧，并且彼此相邻地连接两个第二外部连接器。

公开(公告)号：US20230006100A1

公开(公告)日：2023-01-05

申请号：US17850585

申请日：2022-06-27

Applicant: NICHIA CORPORATION

Inventor： Hidetoshi TANAKA ,  Hirofumi NISHIYAMA ,  Kentaro YAGI

IPC: H01L33/32 ,  H01L33/38

Abstract: A stacked body includes a long side and a short side in a top view. The long side extends in a first direction. The short side extends in a second direction orthogonal to the first direction. The short side is shorter than the long side. A light emission peak wavelength of a first active layer is different from a light emission peak wavelength of a second active layer. A first n-type layer includes a first n-side contact portion contacting a first electrode. A second n-type layer includes a second n-side contact portion contacting a second electrode. In a top view, a center of the first n-side contact portion is separated from a first line that passes through a center of the second n-side contact portion and is parallel to the first direction.

公开(公告)号：US20220102586A1

公开(公告)日：2022-03-31

申请号：US17479957

申请日：2021-09-20

Applicant: NICHIA CORPORATION

Inventor： Hiroshi FUJIMOTO ,  Keiji EMURA ,  Hidetoshi TANAKA

IPC: H01L33/38 ,  H01L33/62

Abstract: A light-emitting element includes: a semiconductor stack having a triangular shape in a top plan view, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first and seconds semiconductor layers; a first electrode located on the first semiconductor layer and including a first connecting portion and a first extension extending from the first connecting portion; and a second electrode located on the second semiconductor layer and including a second connecting portion and a second extension extending from the second connecting portion. The first extension includes a first portion extending from the first connecting portion toward the second connecting portion. The second extension includes a second portion including a portion extending along a first side, a third portion including a portion extending along a second side, and fourth and fifth portions each including a portion extending along a third side.

公开(公告)号：US20210135045A1

公开(公告)日：2021-05-06

申请号：US17078839

申请日：2020-10-23

Applicant: NICHIA CORPORATION

Inventor： Hidetoshi TANAKA

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/52

Abstract: A method of manufacturing a light-emitting device includes providing a structure body including a silicon substrate having a first portion, a second portion, and a third portion between the first portion and the second portion, and a first semiconductor layered body including a first light-emitting layer, the first semiconductor layered body being disposed on or above the silicon substrate. The method includes forming a first resin layer covering a lateral side of the silicon substrate and a lateral side of the first semiconductor layered body. The method includes a removal step of removing the first portion to expose a first surface of the first semiconductor layered body, removing the second portion to expose a second surface of the first semiconductor layered body, and leaving the third portion. The method includes forming a first wavelength conversion member on or above the first surface exposed by the removal of the first portion.

公开(公告)号：US20170092811A1

公开(公告)日：2017-03-30

申请号：US15377453

申请日：2016-12-13

Applicant: NICHIA CORPORATION

Inventor： Hidetoshi TANAKA

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/20

CPC classification number: H01L33/38 ,  H01L33/00 ,  H01L33/20 ,  H01L33/26 ,  H01L33/62

Abstract: A light emitting element includes a semiconductor layer; an upper electrode disposed on an upper surface of the semiconductor layer; and a lower electrode disposed on a lower surface of the semiconductor later. In a plan view, the upper electrode includes a first extending portion extending in an approximately rectangular shape along an outer periphery of the semiconductor layer, a first pad portion connected to a first side among four sides of the first extending portion, a second pad portion connected to a second side that is opposite to the first side, among the four sides of the first extending portion, and a second extending portion and a third extending portion, each disposed in a region surrounded by the first extending portion, the second extending portion and the third extending portion each connecting the first pad portion and the second pad portion.

公开(公告)号：US20160093774A1

公开(公告)日：2016-03-31

申请号：US14869667

申请日：2015-09-29

Applicant: NICHIA CORPORATION

Inventor： Hidetoshi TANAKA

IPC: H01L33/38 ,  H01L33/20

CPC classification number: H01L33/38 ,  H01L33/00 ,  H01L33/20 ,  H01L33/26 ,  H01L33/62

Abstract: A light emitting element includes a semiconductor layer; an upper electrode disposed on an upper surface of the semiconductor layer; and a lower electrode disposed on a lower surface of the semiconductor later. In a plan view, the upper electrode includes a first extending portion extending in an approximately rectangular shape along an outer periphery of the semiconductor layer, a first pad portion connected to a first side among four sides of the first extending portion, a second pad portion connected to a second side that is opposite to the first side, among the four sides of the first extending portion, and a second extending portion and a third extending portion, each disposed in a region surrounded by the first extending portion, the second extending portion and the third extending portion each connecting the first pad portion and the second pad portion.

Abstract translation: 发光元件包括半导体层; 设置在所述半导体层的上表面上的上电极; 以及稍后设置在半导体的下表面上的下电极。 在平面图中，上电极包括沿着半导体层的外周延伸成大致矩形形状的第一延伸部分，与第一延伸部分的四个侧面中的第一侧连接的第一焊盘部分，第二焊盘部分 连接到第一延伸部分的四个侧面中的与第一侧相对的第二侧，以及第二延伸部分和第三延伸部分，每个设置在由第一延伸部分包围的区域中，第二延伸部分 以及第三延伸部分，每个连接第一焊盘部分和第二焊盘部分。