公开(公告)号：US20140339587A1

公开(公告)日：2014-11-20

申请号：US14279890

申请日：2014-05-16

Applicant: NICHIA CORPORATION

Inventor： Hirofumi KAWAGUCHI ,  Akinori YONEDA ,  Hisashi KASAI ,  Kazuki KASHIMOTO ,  Masafumi ITASAKA

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/40 ,  H01L33/24

CPC classification number: H01L33/405 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L2933/0016

Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

Abstract translation: 一种半导体发光元件，具有：半导体层叠体; 包含设置在p型半导体层的上表面上的Ag的全表面电极; 覆盖全表面电极的表面的覆盖电极设置成在全表面电极的外边缘处与p型半导体层的上表面接触，并由Al基金属材料制成; p侧电极，设置在所述盖电极的表面的一部分上; 覆盖所述覆盖电极的其他表面并且包含形成所述覆盖电极的金属材料的氧化物的金属氧化物膜; 并且提供由氧化物制成并覆盖金属氧化物膜的表面的绝缘膜。

公开(公告)号：US20160284940A1

公开(公告)日：2016-09-29

申请号：US15173013

申请日：2016-06-03

Applicant: NICHIA CORPORATION

Inventor： Hirofumi KAWAGUCHI ,  Akinori YONEDA ,  Hisashi KASAI ,  Kazuki KASHIMOTO ,  Masafumi ITASAKA

IPC: H01L33/40 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L2933/0016

Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

Abstract translation: 一种半导体发光元件，具有：半导体层叠体; 包含设置在p型半导体层的上表面上的Ag的全表面电极; 覆盖全表面电极的表面的覆盖电极设置成在全表面电极的外边缘处与p型半导体层的上表面接触，并由Al基金属材料制成; p侧电极，设置在所述盖电极的表面的一部分上; 覆盖所述覆盖电极的其他表面并且包含形成所述覆盖电极的金属材料的氧化物的金属氧化物膜; 并且提供由氧化物制成并覆盖金属氧化物膜的表面的绝缘膜。

公开(公告)号：US20180102460A1

公开(公告)日：2018-04-12

申请号：US15840669

申请日：2017-12-13

Applicant: NICHIA CORPORATION

Inventor： Hirofumi KAWAGUCHI ,  Akinori YONEDA ,  Hisashi KASAI ,  Kazuki KASHIMOTO ,  Masafumi ITASAKA

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/36

CPC classification number: H01L33/405 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L2933/0016

Abstract: A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided.

公开(公告)号：US20160149085A1

公开(公告)日：2016-05-26

申请号：US14947716

申请日：2015-11-20

Applicant: Nichia Corporation

Inventor： Kazuki KASHIMOTO ,  Masafumi ITASAKA ,  Hisashi KASAI ,  Naoki AZUMA

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/00

CPC classification number: H01L33/385 ,  H01L33/08 ,  H01L33/382 ,  H01L2933/0016

Abstract: A method of manufacturing a semiconductor light emitting element includes forming a semiconductor stacked layer body on a substrate, the semiconductor stacked layer body including a first semiconductor layer and a second semiconductor layer; removing a portion of the semiconductor stacked layer body and exposing the first semiconductor layer such that the second semiconductor layer includes an extending portion that extends in a plane direction; forming a conductor layer electrically connecting the first semiconductor layer and the extending portion of the second semiconductor layer; forming a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer; forming a protective film covering at least a portion of the first electrode and at least a portion of the second electrode; and after forming the protective film, removing a portion of the exposed portion of the extending portion.

Abstract translation: 半导体发光元件的制造方法包括在基板上形成半导体层叠体，所述半导体层叠体包含第一半导体层和第二半导体层， 去除所述半导体堆叠层体的一部分并暴露所述第一半导体层，使得所述第二半导体层包括在平面方向上延伸的延伸部分; 形成电连接所述第一半导体层和所述第二半导体层的延伸部分的导体层; 形成与第一半导体层电连接的第一电极和与第二半导体层电连接的第二电极; 形成覆盖所述第一电极和所述第二电极的至少一部分的至少一部分的保护膜; 并且在形成保护膜之后，去除延伸部分的暴露部分的一部分。